1. III-V MONOLITHIC RESONANT PHOTORECEIVER USING LOCAL EPITAXY AND LARGE LATTICE MISMATCH MATERIAL.
- Author
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Aboulhouda, S., Vilcot, J. P., Razeghl, M., Decoster, D., Francois, M., Maricot, S., and Aboudou, A.
- Subjects
- *
INTEGRATED circuits , *OPTOELECTRONIC devices , *ELECTRONIC equipment , *DETECTORS , *SEMICONDUCTORS , *METAL semiconductor field-effect transistors - Abstract
It is shown that local and large lattice mismatch epitaxies could be useful techniques for the fabrication of optoelectronic integrated circuits. As an example, we fabricated a monolithic resonant photoreceiver which associates a long-wavelength metal-semiconductor-metal photodetector, a GaAs MESFET preamplifier, and an inductor. The GaAs / GaInAs heteroepitaxy needed for the photodetector wax selectively grown using a SiO[sub2] mask and the entire circuit was fabricated on a silicon substrate. Compared to a PIN photodiode loaded with a 50-ω resistor, more than 10 dB gain was measured at 7 GHz in a microwave optical link. [ABSTRACT FROM AUTHOR]
- Published
- 1991
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