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1. COMPARISON BETWEEN GaAs AND AIInAs/GaInAs MSM PDs FOR MICROWAVE AND MILLIMETER-WAVE APPLICATIONS USING A TWO-DIMENSIONAL BIPOLAR PHYSICAL MODEL.

Author

Ashour, I. S., Vilcot, J. P., Harari, J., and Decoster, D.

Subjects
*PHOTODIODES, *SEMICONDUCTOR diodes, *SEMICONDUCTORS, *HETEROJUNCTIONS, *GALLIUM arsenide
Abstract

Using a 219 bipolar physical model a comparison is made between GaAs and AllnAs/GaInAs MSM PD performance (cutoff frequency and quantum efficiency) as a function of the device parameters. This covers the applied potential, electrode spacing, absorbing layer thickness, and heterojunction effect. We also reported that for millimeter-wave applications we can expect higher operating frequency using an AllnAs / GaInAs MSP PD, whereas we can expect higher quantum efficiency using a GaAs MSM PD. [ABSTRACT FROM AUTHOR]

Published
1995
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