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Anion doping is an efficient method for modifying the electrical property of the p‐type semiconductor CuI. However, adjustment of the hole density is still challenging. Using sputtering and spin coating techniques, well‐controlled S‐doping of CuI thin films has been realized. The spin‐coated samples present a single (111) out‐of‐plane orientation and very high crystallinity, which is comparable with previously reported epitaxial CuI thin films. The sputtered thin films have advantages in surface morphology and conductivity. Substituting S for I can achieve efficient acceptor doping of CuI for both the physical and chemical growth methods. The highest conductivity of CuI appears at 2.0 at% of S doping, and the doping efficiency is influenced by the self‐compensation effect. [ABSTRACT FROM AUTHOR]

The development of advanced transparent electrical devices has created an urgent demand for wide‐bandgap transparent semiconductors. Herein, a simple, low‐cost ink‐based method for preparation of LaCuOS is introduced. High transmittances of above 60% and 65% at visible (380–750 nm) and mid‐infrared (3–5 μm) wavelengths, respectively, are obtained with LaCuOS films prepared using this ink. With these films, the carrier concentration is above 1018 cm−3, while a conductivity of 5 S cm−1 is obtained, electrical properties that are both higher than those of most transparent p‐type semiconductors. From density functional theory calculations, it is surmised that the improved conductivity of the LaCuOS is a result of its high carrier concentration, and its hole effective mass, which is smaller than that of typical transparent p‐type semiconductors. [ABSTRACT FROM AUTHOR]