1. Indium Diffusion Behavior and Application in HfO2‐Based Conductive Bridge Random Access Memory.
- Author
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Zheng, Hao-Xuan, Shih, Chih-Cheng, Chang, Ting-Chang, Shih, Lin-Yi, Shih, Yao-Kai, Tseng, Yi-Ting, Chen, Wen-Chung, Huang, Wei-Chen, Yang, Chih-Cheng, Wu, Pei-Yu, Huang, Hui-Chun, Tsai, Tsung-Ming, and Sze, Simon M.
- Subjects
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RANDOM access memory , *INDIUM , *NONVOLATILE random-access memory , *TRANSMISSION electron microscopy , *HAFNIUM oxide - Abstract
This study proposes the design of conductive bridge random access memory (CBRAM) using an indium electrode, which diffuses into hafnium oxide. The device is found to exhibit good operating characteristics, maintaining a large operation window, low set and reset voltages, and advantageous operation speed, thereby reducing operating power consumption. Electrical experiments, transmission electron microscopy, and energy‐dispersive spectroscopy confirm that the device exhibits the characteristics of a CBRAM device. In addition, due to the large operation window of this In electrode device, a combination of two of these CBRAM can act as a complementary resistive switching (CRS) device with a large memory window. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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