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1. Simple scheme to increase hold voltage for silicon‐controlled rectifier.

Author

Hung, Chung‐Yu, Kao, Tzu‐Cheng, Lee, Jian‐Hsing, Gong, Jeng, Huang, Tsung‐Yi, Su, Hung‐Der, Chang, Kuo‐Cheng, Huang, Chih‐Fang, and Lo, Kuo‐Hsuan

Abstract

A simple scheme is proposed to increase the hold voltage and not change the original trigger voltage of a silicon‐controlled rectifier (SCR) to enhance its latch‐up immunity without changing the device dimensions. It is found that using the lightly doped P‐diffusion instead of the highly doped P+ diffusion as the P emitter of the anode can increase the hold voltage of an SCR. [ABSTRACT FROM AUTHOR]

Published
2014
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