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Hafnium zirconium oxide (HZO) has been studied intensively due to its potential application to memory and logic devices based on its outstanding dielectric and ferroelectric properties. Because many process factors can significantly impact the properties of HZO thin film, an optimized process or post‐treatment is necessary to ensure its performance. Herein, the effect of hydrogen on HZO thin film can make the film degraded. Analysis of the polarization–voltage hysteresis loops and I–V measurements indicate a leaky behavior in the film. To address this issue, post‐oxygen‐plasma treatment is performed on the film, which results in the decrease in hydrogen ions inside the film and consequently reduces the leakage current density. This finding can provide new insight into the effect of hydrogen incorporation for HZO thin films and methodology to remove leaky components inside ferroelectric films using O2 plasma treatment. [ABSTRACT FROM AUTHOR]

Titanium dioxide (TiO2), tin dioxide (SnO2), and heterostructured TiO2/SnO2 nanotube (NT) arrays have been fabricated by template-assisted atomic-layer deposition (ALD) for use as anodes in a lithium-ion battery (LIB). TiO2 NT arrays with 8 nm thick walls showed higher capacity (≈250 mA h g−1 after the 50th cycle at a rate of C/10) than the typical theoretical capacity of bulk TiO2 and a radically improved capacity retention property upon cycling. SnO2 NT arrays with different wall thicknesses (8, 10, 13, and 20 nm) were also fabricated and their electrochemical performances were measured. All of the SnO2 NT arrays showed substantially higher initial irreversible capacity and higher reversible capacity than those of bulk TiO2. Thinner walls of the SnO2 NTs result in better capacity retention. Heterotubular structures of TiO2 (5 nm)/SnO2 (10 nm)/TiO2 (5 nm) were successfully fabricated, and displayed a sufficiently high capacity (≈300 mA h g−1 after 50 cycles) with exceptionally improved cycling performance up to the 50th cycle. [ABSTRACT FROM AUTHOR]