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Alleviating poverty, mitigating inequality and achieving growth are all acknowledged goals of development, whatever the degree of success with which these goals might have been addressed in various economies of the world. Apart from questions of resolve and genuine commitment, what makes it hard to engage with these goals is that the pursuit of any one of them does not necessarily secure the ends of either or both of the other two. Such engagement requires a measure of conceptual clarity, an identification of normative priorities, and the deployment of carefully crafted policies that accommodate trade‐offs among competing goals. In particular, policies such as the single‐minded pursuit of growth as a panacea for all the difficulties of development appear to be misguided, and based on a faulty application of deductive reasoning to past experience. These issues are addressed here by attending to some elementary arithmetic revolving around the measurement of money‐metric poverty and inequality, and the decomposition of poverty changes into effects attributable to growth and distributional changes. [ABSTRACT FROM AUTHOR]

In this work, the design, fabrication, static device testing, and double‐pulse switching performance of multi‐finger D‐mode GaN metal–insulator–semiconductor high‐electron‐mobility transistors (MISHEMTs) on silicon are discussed. Utilizing an metal‐organic chemical vapor deposition‐grown GaN high‐electron‐mobility transistors stack with a superlattice buffer, field‐plated devices with a meandering gate geometry and a total gate width of 30 mm are fabricated. Plasma enhanced chemical vapor deposition SiNx is used as the gate dielectric, followed by an optimized bilayer SiNx passivation scheme. Devices with 100 μm gate width have an ON/OFF ratio of ≈108. They are analyzed for dynamic Ron (normalized Ron = 3 at 100 μs) and time‐dependent dielectric breakdown for gate reliability, resulting in a β value of 2.65 from the Weibull plot. Devices with a 30 mm gate width exhibit a maximum ON current of 8 A at zero gate voltage and a three‐terminal breakdown of ≈500 V. The devices are diced, wire‐bonded to a printed circuit board, and a double‐pulsed test is performed for switching transient characterization under clamped inductive load. The OFF‐state and ON‐state energy loss are estimated to be Eon = 14 μJ and EOFF = 27 μJ, respectively, when switched at 5 A, 50 V. In this study, the potential of GaN MISHEMTs with bilayer SiNx passivation for low‐power D‐mode switching applications (5 A, 50 V) is demonstrated. [ABSTRACT FROM AUTHOR]

This new method is very simple, inexpensive, and environmentally benign. [ABSTRACT FROM AUTHOR]

Aim This study aimed to assess the sensitivity and specificity of ultrasonographic features of gout in intercritical and chronic stages and compared ultrasonographic features of gout between patients with persistent high serum uric acid (SUA) and patients with low SUA. Methods Adult patients with gout confirmed by demonstration of monosodium urate crystals were recruited, if they were in intercritical or chronic stage clinically. Ultrasonographic examination of the first metatarsophalangeal joints (MTPJs) and the knee joints of both sides were done by a blinded rheumatologist trained in musculoskeletal ultrasound. Results Sixty-two patients with gout and 30 control subjects were examined. The double contour sign (DCS) was found in 71 (57.3%) first MTPJs and tophi were found in 54 (43.5%) first MTPJs. DCS was present in 43 (69.4%) gout patients but none in the control group ( P < 0.001). Sensitivity and specificity (95% CI) of DCS in gout patients were 69.4% (56.4-80.4 %) and 100% (88.3-100 %), respectively, while of tophi they were 66.1% (53-77.7%) and 100% (88.3-100%), respectively. The sensitivity of DCS increased to 100% in high the SUA subgroup (SUA ≥ 7 mg/dL). The low SUA (SUA < 7 mg/dL) gout subgroup showed significantly higher occurrence of erosions (40%) and tophi (50%) in first MTP joints than the control group. Conclusion MSUS is useful for diagnosis of gout in intercritical or chronic stages, especially in patients with persistently high SUA level. [ABSTRACT FROM AUTHOR]

A protocol is presented for a fast, microwave-assisted solid-phase benzoylation of benzoyl chloride or dinitrobenzoyl chloride with aromatic and aliphatic alcohols. [ABSTRACT FROM AUTHOR]