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There is a growing demand to attain organic materials with high electron mobility, μe, as current reliable reported values are significantly lower than those exhibited by their hole mobility counterparts. Here, it is shown that a well‐known nonfullerene‐acceptor commonly used in organic solar cells, that is, BTP‐4F (aka Y6), enables solution‐processed organic thin‐film transistors (OTFT) with a μe as high as 2.4 cm2 V−1 s−1. This value is comparable to those of state‐of‐the‐art n‐type OTFTs, opening up a plethora of new possibilities for this class of materials in the field of organic electronics. Such efficient charge transport is linked to a readily achievable highly ordered crystalline phase, whose peculiar structural properties are thoroughly discussed. This work proves that structurally ordered nonfullerene acceptors can exhibit intrinsically high mobility and introduces a new approach in the quest of high μe organic materials, as well as new guidelines for future materials design. [ABSTRACT FROM AUTHOR]

Conjugated polymers with mixed ionic and electronic transport are essential for developing the complexity and function of electrochemical devices. Current n‐type materials have a narrow scope and low performance compared with their p‐type counterparts, requiring new molecular design strategies. This work presents two naphthalene diimide‐bithiophene (NDI‐T2) copolymers functionalized with hybrid alkyl‐glycol side chains, where the naphthalene diimide unit is segregated from the ethylene glycol (EG) units within the side chain by an alkyl spacer. Introduction of hydrophobic propyl and hexyl spacers is investigated as a strategy to minimize detrimental swelling close to the conjugated backbone and balance the mixed conduction properties of n‐type materials in aqueous electrolytes. It is found that both polymers functionalized with alkyl spacers outperform their analogue bearing EG‐only side chains in organic electrochemical transistors (OECTs). The presence of the alkyl spacers also leads to remarkable stability in OECTs, with no decrease in the ON current after 2 h of operation. Through this versatile side chain modification, this work provides a greater understanding of the structure‐property relationships required for n‐type OECT materials operating in aqueous media. [ABSTRACT FROM AUTHOR]

The use of ternary systems comprising polymers, small molecules, and molecular dopants represents a promising approach for the development of high‐mobility, solution‐processed organic transistors. However, the current understanding of the charge transport in these complex systems, and particularly the role of molecular doping, is rather limited. Here, the role of the individual components in enhancing hole transport in the best‐performing ternary blend systems comprising the small molecule 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene (C8‐BTBT), the conjugated polymer indacenodithiophene‐alt‐benzothiadiazole (C16IDT‐BT), and the molecular p‐type dopant (C60F48) is investigated. Temperature‐dependent charge transport measurements reveal different charge transport regimes depending on the blend composition, crossing from a thermally activated to a band‐like behavior. Using the charge‐modulation spectroscopy technique, it is shown that in the case of the pristine blend, holes relax onto the conjugated polymer phase where shallow traps dominate carrier transport. Addition of a small amount of C60F48 deactivates those shallow traps allowing for a higher degree of hole delocalization within the highly crystalline C8‐BTBT domains located on the upper surface of the blend film. Such synergistic effect of a highly ordered C8‐BTBT phase, a polymer bridging grain boundaries, and p‐doping results in the exceptionally high hole mobilities and band‐like transport observed in this blend system. [ABSTRACT FROM AUTHOR]

The synthesis of a novel fluorinated n‐type small molecule based on an indacenodithiophene core is reported. Fluorination is found to have a significant impact on the physical properties, including a surprisingly dramatic improvement in solubility, in addition to effectively stabilizing the lowest‐unoccupied molecular orbital energy (−4.24 eV). Single‐crystal analysis and density functional theory calculations indicate the improved solubility can be attributed to backbone torsion resulting from the positioning of the fluorine group in close proximity to the strongly electron‐withdrawing dicyanomethylene group. Organic thin‐film transistors made via blade coating display high electron mobility (up to 0.49 cm2 V−1 s−1) along with good retention of performance in ambient conditions. [ABSTRACT FROM AUTHOR]

A report is presented on the fabrication of all solid-state interdigitated flexible microsupercapacitor using ultrafast and highly scalable laser scribing technique, using highly mesoporous carbon synthesized from biomass (mushroom) with hydrothermal preprocessing. The specific protocol used for carbon synthesis renders some unique property features to the material (surface area of 2604 m² g−1 with hierarchical pore size distribution) in the context of supercapacitor electrode application. A polyvinyl alcohol (PVA)-H2SO4 gel electrolyte is used for electrochemical measurements. The microsupercapacitor shows high cyclic stability up to 15000 cycles. Moreover it shows nearly 90% stability after 1000 bending cycles at 60° angle. It also retains its performance even under 120° bending condition. This work represents a facile and fast technique for microscaled device fabrication that can be easily commercialized. Moreover, the mushroom-derived carbon used to make the electrodes holds great promise in context of the stability and flexibility of flexible supercapacitors. [ABSTRACT FROM AUTHOR]

Ferroelectric tunnel junctions (FTJs) are ideal resistance‐switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current‐voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography‐based device fabrication method that would allow for their mass production. Co‐planar FTJs that are fabricated using wafer‐scale adhesion lithography technique are demonstrated, and a bi‐stable rectifying behavior with colossal TER approaching 106% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride‐co‐trifluoroethylene) [P(VDF‐TrFE)], and employ asymmetric co‐planar metallic electrodes separated by <20 nm. The tunneling nature of the charge transport is corroborated using Simmons direct tunneling model. The present work is the first demonstration of functional FTJs manufactured via a scalable lithography‐based nano‐patterning technique and could pave the way to new and exciting memory device concepts. [ABSTRACT FROM AUTHOR]