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A method of using non‐volatile and fast ferroelectric field‐effect transistor (FeFET) devices to realize Boolean logic is proposed. First, the internal states are initialized. Then, the gate and body function as input terminals, which are used to write the states of the device, based on the voltage. Finally, the output signals can be easily read through the drain current. Of the 10 Institute of Electrical and Electronics Engineers (IEEE) standard logic gates, eight can be implemented using the proposed operation method alone and by following the definitions listed herein. Thus, to enable FeFET devices to act as functional logic gates, a simple operating method is proposed, providing substantial contributions to the development of computing in memory. The experimental results provide evidence of the efficacy of this method. [ABSTRACT FROM AUTHOR]

2D semiconductor field‐effect transistors (2D FETs) have emerged as a promising candidate for beyond‐silicon electronics applications. However, its device performance has often been limited by the metal‐2D semiconductor contact, and the non‐negligible contact resistance (RSD) not only deteriorates the on‐state current but also hinders the direct characterization of the intrinsic properties of 2D semiconductors (e.g., intrinsic charge carrier mobility, μint). Therefore, a proper extraction technique that can independently characterize the metal‐2D semiconductor contact behavior and the intrinsic properties of a 2D semiconducting layer is highly desired. In this study, a universal yet simple method is developed to accurately extract the critical parameters in 2D FETs, including characteristic temperature (To), threshold voltage (VT), RSD, and μint. The practicability of this method is extensively explored by characterizing the temperature‐dependent carrier transport behavior and the strain‐induced band structure modification in 2D semiconductors. Technology computer aided design simulation is subsequently employed to verify the precision of RSD extraction. Furthermore, the universality of the proposed method is validated by successfully implementing the extraction to various 2D semiconductors, including black phosphorus, indium selenide, molybdenum disulfide, rhenium disulfide, and tungsten disulfide with top‐ and bottom‐gated configurations. [ABSTRACT FROM AUTHOR]

Understanding the circumstances and conditions surrounding disaster‐attributed deaths may contribute to designing and implementing emergency preparedness and response programmes. This paper introduces a three‐step cluster analysis of multiple binary variables to investigate mortality patterns related to tropical cyclones. It is designed to overcome the difficulties of performing cluster analysis in a disaster database that is composed in part of nominal variables and is unavoidably incomplete owing to missing information. The first step in the process codes all variables as binary data in order to accommodate the nominal variables. The second step calculates Spearman's rank correlation coefficients for pairs of variables. And the third step subjects the correlation coefficients to cluster analysis. Data related to 1,575 deaths attributed to tropical cyclones (also known as typhoons) that struck Taiwan between 2000 and 2015 are used to illustrate the method. The results yield two distinct groups of variables that are worthy of further exploration. [ABSTRACT FROM AUTHOR]