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In this paper, the impact of the bias networks on a radio frequency (RF) power amplifier (PA) is analyzed and discussed comprehensively. Both the different sizes and positions of the bias microstrip line circuit have been studied for a broadband class AB PA. Both simulations and measurements show that the performance of the PA can be greatly improved with the adjustment of the bias circuit by effecting the harmonic impedance of the whole matching circuit. Compared with the existing works, the fabricated PA based on the proposed technique provides the best performance, thereby demonstrating the effectiveness of the developed bias circuit optimization method. [ABSTRACT FROM AUTHOR]

A model is proposed for the drop in electronic resistance of n-type semiconducting indium oxide (In2O3) upon illumination with light (350 nm, 3.5 eV) as well as for the (light-enhanced) sensitivity of In2O3 to oxidizing gases. Essential features of the model are photoreduction and a rate-limiting oxygen-diffusion step. Ordered, mesoporous In2O3 with a high specific surface area serves as a versatile system for experimental studies. Analytical techniques comprise conductivity measurements under a controlled atmosphere (synthetic air, pure N2) and temperature-resolved in-situ Fourier transform infrared (FTIR) spectroscopy. IR measurements reveal that oxygen vacancies form a donor level 0.18 eV below the conduction band. [ABSTRACT FROM AUTHOR]