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Van der Waals (vdW) atomically thin materials and their heterostructures offer a versatile platform for the management of nanoscale heat transport and the design of novel thermoelectrics. These require the measurement of highly anisotropic heat transport in vdW‐based nanolayers, a major challenge for nanostructured materials and devices. In the present study, a novel effective method of cross‐sectional scanning thermal microscopy was used to map and quantify the anisotropic heat transport in nanoscale thick layers of vdW materials and the material‐substrate interfaces. This technique measures the heat conducted into a vdW crystal via the nanoscale apex of a heat‐sensitive probe. The crystal is nano‐polished via Ar ion beams generating an oblique nearly atomically flat surface. By measuring the thermal conductance variation as a function of increasing layer thickness, the transition between the cross‐plane and in‐plane heat transport (defined by heat conductivity anisotropy) is acquired. By using an analytical model validated by finite element simulations, anisotropic thermal transport in a gamma indium selenide crystal nano‐thin flake on a Si substrate was studied, obtaining results corresponding to anomalously low anisotropic thermal conductivities of kxy = 2.16 Wm−1 K−1 in‐plane and kz = 0.89 Wm−1 K−1 cross‐plane confirming its potential for thermoelectric applications. [ABSTRACT FROM AUTHOR]

Efficient thermoelectric (TE) conversion of waste heat to usable energy is a holy grail promising to address major societal issues related to energy crisis and global heat management. For these to be economical, synthesis of a solid‐state material with a high figure‐of‐merit (ZT) values is the key, with characterization methods quantifying TE and heat transport properties being indispensable for guiding the development of such materials. In the present study, a large enhancement of the TE power factor in Sb2Te3/MoS2 multilayer structures is reported. A new approach is used to simultaneously experimentally determine the values of in‐plane (kxy) and out‐of‐pane (kz) thermal conductivities for multilayer samples with characteristic layer thickness of few nanometres, essential for the quantification of the ZT, the key parameter for the TE material. Combining simultaneous enhancement in the value of in‐plane power factor (to (4.9 ± 0.4) × mWm−1 K−2) and reduction of the in‐plane value of the thermal conductivity (to 0.7 ± 0.1 Wm−1 K−1) for Sb2Te3/MoS2 multilayer sample led to high values of ZT of 2.08 ± 0.37 at room temperature. The present study, therefore, sets the foundation for a new methodology of exploiting the properties of 2D/3D interfaces for the development of novel fully viable thermoelectric materials. [ABSTRACT FROM AUTHOR]

Understanding the fundamentals of surface decoration effects in phase‐separation materials, such as lithium titanate (LTO), is important for optimizing the lithium‐ion battery (LIB) performance. LTO polycrystalline thin‐film electrodes with and without doped Al–ZnO (AZO) surface coating decoration are used as ideal models to gain insights into the mechanisms involved. Operando shear force modulation spectroscopy is used to observe for the first time the nanoscale dynamics of solid‐electrolyte‐interphase (SEI) formation on the electrode surfaces, confirming that the AZO coating is electrochemically converted into a stiff, homogenous SEI layer that protects the surface from the electrolyte‐induced decomposition. This AZO layer and its resultant artificial SEI‐layer have higher Li‐ion transport rates than the unmodified surface. These layers can reduce barriers to surface nucleation and facilitate rapid redistribution of lithium‐ions during the Li4Ti5O12 ⇄ Li7Ti5O12 phase separation, significantly inhabiting the orderly collective phase‐separation behavior (electrochemical oscillation) in the LTO electrode. The suppressed voltage oscillations indicate more homogeneous local exchange current density and de/intercalation states with the decorated electrodes, thereby extending their battery efficiency and long‐term cycling stability. This work highlights the ultimate importance of surface treatment for LIB materials for determining their interfacial chemistry and phase transition during the intercalation/deintercalation. [ABSTRACT FROM AUTHOR]

The ability of a material to conduct heat influences many physical phenomena, ranging from thermal management in nanoscale devices to thermoelectrics. Van der Waals 2D materials offer a versatile platform to tailor heat transfer due to their high surface‐to‐volume ratio and mechanical flexibility. Here, the nanoscale thermal properties of 2D indium selenide (InSe) are studied by scanning thermal microscopy. The high electrical conductivity, broad‐band optical absorption, and mechanical flexibility of 2D InSe are accompanied by an anomalous low thermal conductivity (κ). This can be smaller than that of low‐κ dielectrics, such as silicon oxide, and it decreases with reducing the lateral size and/or thickness of InSe. The thermal response is probed in free‐standing InSe layers as well as layers supported by a substrate, revealing the role of interfacial thermal resistance, phonon scattering, and strain. These thermal properties are critical for future emerging technologies, such as field‐effect transistors that require efficient heat dissipation or thermoelectric energy conversion with low‐κ, high electron mobility 2D materials, such as InSe. [ABSTRACT FROM AUTHOR]

Biomaterials capable of controlling the delivery of drugs have the potential to treat a variety of conditions. Herein, the preparation of electrically conductive silk fibroin film‐based drug delivery devices is described. Casting aqueous solutions of Bombyx mori silk fibroin, followed by drying and annealing to impart β‐sheets to the silk fibroin, assure that the materials are stable for further processing in water; and the silk fibroin films are rendered conductive by generating an interpenetrating network of a copolymer of pyrrole and 3‐amino‐4‐hydroxybenzenesulfonic acid in the silk fibroin matrix (characterized by a variety of techniques including circular dichroism, Fourier‐transform infrared spectroscopy, nuclear magnetic resonance, Raman spectroscopy, resistance measurements, scanning electron microscopy‐energy dispersive X‐ray spectroscopy, thermogravimetric analysis, X‐ray diffraction, and X‐ray photoelectron spectroscopy). Fibroblasts adhere on the surface of the biomaterials (viability assessed using an (3‐(4,5‐dimethylthiazol‐2‐yl)‐2,5‐diphenyltetrazolium bromide) assay and visualized using a confocal microscope), and a fluorescently labeled drug (Texas‐Red Gentamicin) can be loaded electrochemically and released (µg cm−2 quantities) in response to the application of an electrical stimulus. [ABSTRACT FROM AUTHOR]

This work reports on solution processed Nd2O3 thin films that are deposited under ambient conditions at moderate temperatures of about 400 °C and their implementation as gate dielectrics in thin film transistors employing solution processed ZnO semiconducting channels is also demonstrated. The optical, dielectric, electric, structural, surface, and interface properties of Nd2O3 films are investigated using a wide range of characterization techniques that reveal smooth Nd2O3 films of cubic structure, wide bandgap (6 eV), high‐k (11), and low leakage currents (<0.5 nA cm−2). Thin film transistors (TFTs) using ZnO channels show excellent characteristics, such as high electron mobility, in excess of 65 cm2 V−1 s−1, high on/off current ratio in the range between 106 and 107, and negligible hysteresis. The devices demonstrate excellent constant bias stress and air stability air, i.e., only a small decrease of the electron mobility and threshold voltage (<12%). In addition, the excellent uniformity and homogeneity that is demonstrated combined with the relatively low deposition temperature (compared with those used with the vast majority of the vacuum based techniques employed) in ambient air on glass substrates indicates the potential for the rapid development of metal oxide‐based TFTs employing gate dielectrics also grown from solutions at low manufacturing cost. [ABSTRACT FROM AUTHOR]

Nanoscale scanning thermal microscopy (SThM) transport measurements from cryogenic to room temperature on 2D structures with sub 30 nm resolution are reported. This novel cryogenic operation of SThM, extending the temperature range of the sample down to 150 K, yields a clear insight into the nanothermal properties of the 2D nanostructures and supports the model of ballistic transport contribution at the edge of the detached areas of exfoliated graphene which leads to a size‐dependent thermal resistance of the detached material. The thermal resistance of graphene on SiO2 is increased by one order of magnitude by the addition of a top layer of MoS2, over the temperature range of 150–300 K, providing pathways for increasing the efficiency of thermoelectric applications using van der Waals (vdW) materials. Density functional theory calculations demonstrate that this increase originates from the phonon transport filtering in the weak vdW coupling between the layers and the vibrational mismatch between MoS2 and graphene layers. [ABSTRACT FROM AUTHOR]