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ABSTRACT The effect of void on characteristics of the laterally diffused metal oxide semiconductor (LDMOS) power amplifier (PA) is analyzed using the thermal and circuit analysis together. Thermal analysis is performed for finding the junction temperature of LDMOS PA as void area changes. Circuit analysis is performed from these results and LDMOS PA libraries. The analysis results show the linearity, gain, and efficiency degradation in the LDMOS PA as a result of the increase in void area. And this simulation methodology can be used for the design of the PA. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:691-694, 2016 [ABSTRACT FROM AUTHOR]

A hexaferrite slant and slot multiple-input multiple-output antenna with miniature antenna elements was simulated, fabricated, and characterized for antenna performance. Measured return loss and isolation were −33.9/−26.6 dB (for antenna 1/antenna 2) and −18.6 dB at 2.45 GHz, respectively. Measured bandwidth was 454/502 MHz at VSWR < 3. Correlation coefficient between antenna elements calculated from experimental S-parameters was less than 0.00085 between 2.4 and 2.5 GHz. Radiation efficiency of the antennas was measured to be 82% at 2.45 GHz. The antennas have two lobes, omnidirectional, and flower patterns for potential mobile device applications. Simulated and measured antenna performance was found to be in good agreement with each other. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:551-554, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27370 [ABSTRACT FROM AUTHOR]