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Passivating the interfaces between the perovskite and charge transport layers is crucial for enhancing the power conversion efficiency (PCE) and stability in perovskite solar cells (PSCs). Here we report a dual‐interface engineering approach to improving the performance of FA0.85MA0.15Pb(I0.95Br0.05)3‐based PSCs by incorporating Ti3C2Clx Nano‐MXene and o‐TB‐GDY nanographdiyne (NanoGDY) into the electron transport layer (ETL)/perovskite and perovskite/ hole transport layer (HTL) interfaces, respectively. The dual‐interface passivation simultaneously suppresses non‐radiative recombination and promotes carrier extraction by forming the Pb−Cl chemical bond and strong coordination of π‐electron conjugation with undercoordinated Pb defects. The resulting perovskite film has an ultralong carrier lifetime exceeding 10 μs and an enlarged crystal size exceeding 2.5 μm. A maximum PCE of 24.86 % is realized, with an open‐circuit voltage of 1.20 V. Unencapsulated cells retain 92 % of their initial efficiency after 1464 hours in ambient air and 80 % after 1002 hours of thermal stability test at 85 °C. [ABSTRACT FROM AUTHOR]

Highly crystalized perovskite film with smooth surface is of great importance to obtain high photovoltaic performances. Herein, UV irradiation is applied to the perovskite films during their thermal annealing process. It is revealed that UV irradiation treatment can largely improve perovskite crystallization and reduce defects. This greatly improves power conversion efficiency (PCE) and environmental stability of the resulted solar cells (ITO/SnO2/perovskite/Spiro‐OMeTAD/Au). By combining CH3O‐PEAI surface passivation, an outstanding PCE of 23.24% is achieved. [ABSTRACT FROM AUTHOR]

Regulating the electron transport layer (ETL) has been an effective way to promote the power conversion efficiency (PCE) of perovskite solar cells (PSCs) as well as suppress their hysteresis. Herein, the SnO2 ETL using a cost‐effective modification material rubidium fluoride (RbF) is modified in two methods: 1) adding RbF into SnO2 colloidal dispersion, F and Sn have a strong interaction, confirmed via X‐ray photoelectron spectra and density functional theory results, contributing to the improved electron mobility of SnO2; 2) depositing RbF at the SnO2/perovskite interface, Rb+ cations actively escape into the interstitial sites of the perovskite lattice to inhibit ions migration and reduce non‐radiative recombination, which dedicates to the improved open‐circuit voltage (Voc) for the PSCs with suppressed hysteresis. In addition, double‐sided passivated PSCs, RbF on the SnO2 surface, and p‐methoxyphenethylammonium iodide on the perovskite surface, produces an outstanding PCE of 23.38% with a Voc of 1.213 V, corresponding to an extremely small Voc deficit of 0.347 V. [ABSTRACT FROM AUTHOR]

Trap‐assisted non‐radiative recombination losses and moisture‐induced degradation significantly impede the development of highly efficient and stable inverted (p–i–n) perovskite solar cells (PSCs), which require high‐quality perovskite bulk. In this research, we mitigate these challenges by integrating thermally stable perovskite layers with Lewis base covalent organic frameworks (COFs). The ordered pore structure and surface binding groups of COFs facilitate cyclic, multi‐site chelation with undercoordinated lead ions, enhancing the perovskite quality across both its bulk and grain boundaries. This process not only reduces defects but also promotes improved energy alignment through n‐type doping at the surface. The inclusion of COF dopants in p–i–n devices achieves power conversion efficiencies (PCEs) of 25.64 % (certified 24.94 %) for a 0.0748‐cm2 device and 23.49 % for a 1‐cm2 device. Remarkably, these devices retain 81 % of their initial PCE after 978 hours of accelerated aging at 85°C, demonstrating remarkable durability. Additionally, COF‐doped devices demonstrate excellent stability under illumination and in moist conditions, even without encapsulation. [ABSTRACT FROM AUTHOR]