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Metal‐halide perovskites have proven to be a versatile group of semiconductors for optoelectronic applications, with ease of bandgap tuning and stability improvements enabled by halide and cation mixing. However, such compositional variations can be accompanied by significant changes in their charge‐carrier transport and recombination regimes that are still not fully understood. Here, a novel combinatorial technique is presented to disentangle such dynamic processes over a wide range of temperatures, based on transient free‐space, high‐frequency microwave conductivity and photoluminescence measurements conducted simultaneously in situ. Such measurements are used to reveal and contrast the dominant charge‐carrier recombination pathways for a range of key compositions: prototypical methylammonium lead iodide perovskite (MAPbI3), the stable mixed formamidinium‐caesium lead‐halide perovskite FA0.83Cs0.17PbBr0.6I2.4 targeted for photovoltaic tandems with silicon, and fully inorganic wide‐bandgap CsPbBr3 aimed toward light sources and X‐ray detector applications. The changes in charge‐carrier dynamics in FA0.83Cs0.17PbBr0.6I2.4 across temperatures are shown to be dominated by radiative processes, while those in MAPbI3 are governed by energetic disorder at low temperatures, low‐bandgap minority‐phase inclusions around the phase transition, and non‐radiative processes at room temperature. In contrast, CsPbBr3 exhibits significant charge‐carrier trapping at low and high temperatures, highlighting the need for improvement of material processing techniques for wide‐bandgap perovskites. [ABSTRACT FROM AUTHOR]

In this essay, a case study is presented on the electronic structure of several metal halide perovskites (MHP) using Kelvin probe (KP)‐based surface photovoltage (SPV) measurements and ultraviolet photoemission spectroscopy (UPS) to demonstrate the advantages, but also the pitfalls, of using these techniques to characterize the surfaces of these materials. The first part addresses the loss of halide species from perovskite surfaces upon supragap illumination in vacuum. This has the potential to cause both a long‐term alteration of the sample work function and a modification of the KP tip during SPV measurements. If undetected, this leads to a misinterpretation of the MHP surface potential. The second part illustrates the difficulties in determining the valence band maximum (VBM) of MHP surfaces with UPS and stresses the importance of taking into account the low density of states at the VBM edge. Given this circumstance, specific care must be taken to eliminate measurement artifacts in order to ascertain the presence or absence of low densities of electronic gap states above the VBM. This essay also highlights issues such as film degradation, nonequilibrium situations (e.g., SPV), and satellite emissions, which occur during photoemission spectroscopy. [ABSTRACT FROM AUTHOR]

The production of highly efficient single‐ and multijunction metal halide perovskite (MHP) solar cells requires careful optimization of the optical and electrical properties of these devices. Here, precise control of CH3NH3PbI3 perovskite layers is demonstrated in solar cell devices through the use of dual source coevaporation. Light absorption and device performance are tracked for incorporated MHP films ranging from ≈67 nm to ≈1.4 µm thickness and transfer‐matrix optical modeling is utilized to quantify optical losses that arise from interference effects. Based on these results, a device with 19.2% steady‐state power conversion efficiency is achieved through incorporation of a perovskite film with near‐optimum predicted thickness (≈709 nm). Significantly, a clear signature of photon reabsorption is observed in perovskite films that have the same thickness (≈709 nm) as in the optimized device. Despite the positive effect of photon recycling associated with photon reabsorption, devices with thicker (>750 nm) MHP layers exhibit poor performance owing to competing nonradiative charge recombination in a "dead‐volume" of MHP. Overall, these findings demonstrate the need for fine control over MHP thickness to achieve the highest efficiency cells, and accurate consideration of photon reabsorption, optical interference, and charge transport properties. [ABSTRACT FROM AUTHOR]

The majority of hole-transporting layers used in n-i-p perovskite solar cells contain 4- tert butylpyridine ( tBP). High power-conversion efficiencies and, in particular, good steady-state performance appears to be contingent on the inclusion of this additive. On the quest to improve the steady state efficiencies of the carbon nanotube-based hole-transporter system, this study has found that the presence of tBP results in an extraordinary improvement in the performance of these devices. By deconstructing a prototypical device and investigating the effect of tBP on each individual layer, the results of this study indicate that this performance enhancement must be due to a direct chemical interaction between tBP and the perovskite material. This study proposes that tBP serves to p-dope the perovskite layer and investigates this theory with poling and work function measurements. [ABSTRACT FROM AUTHOR]

In recent years, there has been an unprecedented rise in the performance of metal halide perovskite solar cells. They are now in a position to compete on performance with traditional crystalline solar cells, and as such the most pressing questions concern the long term operational stability of this class of solar cell. Here, recent developments in understanding and overcoming stability concerns of metal halide perovskite solar cells are highlighted. An overview of possible instability issues due to electrical, atmospheric, heat, and light stresses is provided and the different implications to the most commonly used device architectures are discussed. [ABSTRACT FROM AUTHOR]

Halide perovskites are currently one of the most heavily researched emerging photovoltaic materials. Despite achieving remarkable power conversion efficiencies, perovskite solar cells have not yet achieved their full potential, with the interfaces between the perovskite and the charge‐selective layers being where most recombination losses occur. In this study, a fluorinated ionic liquid (IL) is employed to modify the perovskite/SnO2 interface. Using Kelvin probe and photoelectron spectroscopy measurements, it is shown that depositing the perovskite onto an IL‐treated substrate results in the crystallization of a perovskite film which has a more n‐type character, evidenced by a decrease of the work function and a shift of the Fermi level toward the conduction band. Photoluminescence spectroscopy and time‐resolved microwave conductivity are used to investigate the optoelectronic properties of the perovskite grown on neat and IL‐modified surfaces and it is found that the modified substrate yields a perovskite film which exhibits an order of magnitude lower trap density than the control. When incorporated into solar cells, this interface modification results in a reduction in the current–voltage hysteresis and an improvement in device performance, with the best performing devices achieving steady‐state PCEs exceeding 20%. [ABSTRACT FROM AUTHOR]