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Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (diameter (DCNT) ≥ 1.4 nm) due to the small electronic band gap (EG) ≤ 0.6 eV and effective mass. This work investigates the on‐current and off‐current tradeoff for two populations of semiconducting‐enriched CNT with DCNT ≈ 1.0 nm displaying a simultaneous 50x improvement in minimun current (IMIN) with 2.5x degradation in contact resistance compared to DCNT ≈ 1.4 nm using a Pd side‐bonded contact. A method to enhance the performance of low‐leakage CNFETs is demonstrated using sub‐monolayer self‐aligned contact doping with 0.8 nm of MoOX, which delivers a 57% reduction in contact resistance to DCNT ≈ 1.0 nm. Robustness is verified after annealing at 200 °C for 30 min and monitoring stability across 6 months post‐fabrication with no change in electrical behaviors. [ABSTRACT FROM AUTHOR]

Semiconducting single‐walled carbon nanotube (CNT) is a promising candidate as a channel material for advanced logic transistors, attributed to the ultra‐thin 1‐nm cylindrical geometry, high mobility, and high carrier injection velocity. However, the presence of undesired CNT bundles in the CNT arrays for wafer‐scale device fabrication, even when utilizing the state‐of‐the‐art dimension‐limited self‐alignment (DLSA) method, poses challenges. These CNT bundles degrade the transistor gate's efficiency in controlling the flow of charge carriers in the CNT channel, leading to pronounced device‐to‐device variability. Here, a novel method is introduced to alleviate bundling in CNT arrays assembled via DLSA, by involving small molecule additive to screen the attractive van der Waals force between neighboring CNTs during the DLSA process, resulting in over 50% reduction in CNT bundling. Furthermore, a pioneering methodology for quantifying CNT bundles is presented and employed experimentally to assess bundles in dense CNT arrays assembled by DLSA using transmission electron microscopy. Both experimental data and molecular dynamics simulation reveal that CNT bundling originates from van der Waals attraction between CNTs, and the disturbed liquid‐liquid interface by accumulating excess polar molecules. These findings illuminate new pathways for realizing dense, bundle‐free CNT arrays. [ABSTRACT FROM AUTHOR]

Background and Aim: Treatment with sorafenib causes diverse side effects, which limits adherence. This work assesses whether Home Care, a psychosocial nursing intervention, prolongs the duration of treatment in patients with advanced hepatocellular carcinoma (HCC) and if it influences health‐related quality of life (HRQL). Methods and Results: This is a cohort study using data from patients receiving sorafenib in the prospective Bern HCC Cohort at the University Hospital. Duration of treatment, overall survival, and HRQL using the Functional Assessment of Cancer Therapy‐Hepatobiliary questionnaire were compared in the two groups. A total of 173 patients were eligible for the analysis. Among them, 141 were in the Home Care program, and 32 were not. Patients with Home Care had a significantly longer duration of treatment (265 days vs 152 days, P = 0.003) and a better functional well‐being (17.7 vs 12.5, P = 0.015). Conclusion: Psychosocial interventions such as Home Care are a valid method in improving adherence to sorafenib and can therefore be recommended. [ABSTRACT FROM AUTHOR]

Large area MoS2 films with tunable physical-chemical properties are grown on dielectric substrates by annealing of ultrathin Mo layers in the presence of a sulfur-containing gaseous precursor. Different growth conditions are found to have a significant impact on material properties, including chemical composition, roughness, and grain sizes, thus shedding light on critical parameters that govern sulfurization processes for the synthesis of large area 2D transition metal dichalcogenides. Optimized growth conditions in combination with the use of single crystal sapphire substrates with atomically flat interface result in the formation of oriented MoS2 films with improved quality and electrical performance. On the basis of this versatile synthesis technique, an original double-step process is presented for the synthesis of WS2/MoS2 vertical heterostructures. Good uniformity of layers over large area has enabled first isolation of defects by electron spin resonance spectroscopy with densities correlated with mobility degradation and the first experimental characterization of the band alignment at the interfaces of MoS2, WS2, and their vertical stacks with the underlying SiO2 insulator. [ABSTRACT FROM AUTHOR]

Nanoscale morphology of vanadium dioxide (VO2) films can be controlled to realize smooth ultrathin (<10 nm) crystalline films or nanoparticles with atomic layer deposition, opening doors to practical VO2 metal-insulator transition (MIT) nanoelectronics. The precursor combination, the valence of V, and the density for as-deposited VO2 films, as well as the postdeposition crystallization annealing conditions determine whether a continuous thin film or nanoparticle morphology is obtained. It is demonstrated that the films and particles possess both a structural and an electronic transition. The resistivity of ultrathin films changes by more than two orders of magnitude across the MIT, demonstrating their high quality. [ABSTRACT FROM AUTHOR]

2D transition metal dichalcogenide based van der Waals materials are promising candidates to realize tunnel field effect transistors (TFETs) with a steep subthreshold swing (SS) for low‐power applications. Their atomically flat, self‐passivated layers offer potentially defect free interlayer tunneling. There are still several issues that need to be addressed to experimentally achieve a steep SS, e.g., the Schottky contacts, impact of thick layers, and device architecture with respect to gate configuration. This paper resolves these challenges by experimentally demonstrating MoS2/MoTe2 TFETs and their electrical characteristics, in conjunction with ab initio simulations and surface Kelvin probe microscopy. The Schottky barrier's effect at the contact regions are isolated by fabricating individual buried gates below the contacts. Devices with different top and bottom gate configurations are produced to understand the impact of gate placement on the heterostructure characteristics. Quantum transport simulations are performed on MoS2/MoTe2 multilayer stack to evaluate the impact of multiple layers on TFET performance, effect of gate placement, and the mechanism behind indirect tunneling over the heterojunction region. This work highlights the influence of the Schottky contacts, multiple layers and the role of different gate configurations on the band‐to‐band tunneling phenomenon in 2D heterojunction TFETs. [ABSTRACT FROM AUTHOR]