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A novel mathematical model for a hybrid (Cu–CuO/blood) Jeffrey nanofluid passing a vertical symmetric microchannel along with an electroosmosis pump is presented. The focuses on the advancement of mathematical modeling techniques, its comprehensive analysis of microfluidic system dynamics, and its potential to inform the optimal design of devices using nanofluids with broad applications in various fields. Arrhenius’s law is used to analyze endothermic– exothermic reactions and activation energy. The governing partial differential equations of the fixed frame are transformed into ordinary differential equations of the wave frame using self-similarity transformations. Low Reynolds number and long-wavelength approximations helped to find solutions of the equations by applying a suitable BVP solver in MATLAB. The fluid’s velocity, temperature, concentration, and electroosmosis properties are studied graphically. Two-dimensional contour plots of fluid velocity and three-dimensional surface plots of fluid properties are discussed. Physically significant quantities of mass transfer rate, skin friction coefficient, entropy generation, and heat transfer rate are studied using contour plots. Artificial neural network simulation using Bayesian regularization backpropagation algorithms is analyzed for training state, error histogram, fit, performance, and regression plots. Conclusively, the comprehensive analysis of the fluid dynamics, entropy generation, mass and heat transfer, and in the microchannel, coupled with the successful implementation of artificial neural network simulation, contributes to an improved understanding of the system’s behavior. Entropy generation was raised for enhanced Brownian motion number and reduced values of thermophoresis, activation energy, and endothermic–exothermic reaction parameters. This study’s results can be used to improve the efficiency and effectiveness of microfluidic devices used in fields as diverse as electrical cooling and medicine delivery. [ABSTRACT FROM AUTHOR]

Abstract: The transfer of synthesized large‐area 2D materials to arbitrary substrates is expected to be a vital step for the development of flexible device fabrication processes. The currently used hazardous acid‐based wet chemical etching process for transferring large‐area MoS2 films is deemed to be unsuitable because it significantly degrades the material and damages growth substrates. Surface energy‐assisted water‐based transfer processes do not require corrosive chemicals during the transfer process; however, the concept is not investigated at the wafer scale due to a lack of both optimization and in‐depth understanding. In this study, a wafer‐scale water‐assisted transfer process for metal–organic chemical vapor‐deposited MoS2 films based on the hydrofluoric acid treatment of a SiO2 surface before the growth is demonstrated. Such surface treatment enhances the strongly adhering silanol groups, which allows the direct transfer of large‐area, continuous, and defect‐free MoS2 films; it also facilitates the reuse of growth substrate. The developed transfer method allows direct fabrication of flexible devices without the need for a polymeric supporting layer. It is believed that the proposed method can be an alternative defect‐ and residue‐free transfer method for the development of MoS2‐based next‐generation flexible devices. [ABSTRACT FROM AUTHOR]

A stretchable and transparent In-Ga-Zn-O (IGZO) thin film transistors with high electrical performance and scalability is demonstrated. A load-controlled roll transfer method is realized for fully automated and scalable transfer of the IGZO TFTs from a rigid substrate to a nonconventional elastomeric substrate. The IGZO TFTs exhibit high electrical performance under stretching and cyclic tests, demonstrating the potentiality of the load-controlled roll transfer in stretchable electronics. The mechanics of the load-controlled roll transfer is investigated and simulated, and it is shown that the strain level experienced by the active layers of the device can be controlled to well below their maximum fracture level during transfer. [ABSTRACT FROM AUTHOR]

A stretchable and transparent indium‐galliumzinc‐oxide (IGZO) thin‐film transistor (TFT) with high electrical performance and scalability is reported by Jae‐Hyun Kim, Jong‐Hyun Ahn, and co‐workers on page 2024. A load‐controlled roll transfer method is realized for fully automated and scalable transfer of the IGZO TFTs from a rigid substrate to an elastomeric substrate. The IGZO TFTs exhibit stable electrical performance without deformation or breakage when stretched and twisted, demonstrating the potentiality of the load‐controlled roll transfer in stretchable electronics. [ABSTRACT FROM AUTHOR]