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Resistive random‐access memories (ReRAM) are promising candidates for next‐generation non‐volatile memory, logic components, and bioinspired neuromorphic computing applications. The analog resistive switching (RS) tuning with a sizable memory window is crucial for realizing multi‐level storage devices. This work demonstrates the multi‐level storage capability of fabricated Ag/NiO/W ReRAM architecture, controlled through voltage modulations. The fabricated ReRAM structures exhibit stable bipolar analog RS, non‐overlapping resistance, and endurance of ≈104 cycles, respectively, with marginal statistical variations/fluctuations. Also, the fabricated ReRAM offers highly controlled and stable retention characteristics tested up to ≈104 s with significantly controlled statistical variations/fluctuations. Adjacent thereto, it offers a substantially lower operating SET and RESET voltage of 1 and −1 V, respectively. Moreover, the non‐overlapping multiple resistive states are observed with the voltage pulse modulation schemes. Furthermore, the current switching mechanism is described using a model proposed for the conductive filament growth and the contribution of the NiO/W interface layer (IL) toward notable RS of fabricated Ag/NiO/W structures. [ABSTRACT FROM AUTHOR]

Metal–organic frameworks (MOFs) have recently attracted a great deal of attention especially as conceivable advanced gate dielectrics for next‐generation field‐effect transistors (FETs) and memory device applications. Dielectric surface charge retention mapping is essential for gauging the leakage current and threshold voltage stability. Due to a dearth of systematic real‐time surface charge probing of MOFs dielectrics, in this work, the nanoscale Kelvin probe force microscopy (KPFM) technique is employed for the contact potential difference (CPD) analysis of developed hybrid copper–metal–organic clusters (Cu‐MOCs)/Si systems. Films are synthesized through the sol‐gel process consisting of copper metal core linked with organic ligands. With 3V positive and negative DC bias, charge injection offset between positive and negative bias is observed to be ≈190 mV, indicating the intrinsic Fermi level alignment between KPFM tip and sample surface charges. The high‐resolution surface CPD mappings bring forth the white (≈98 mV) and black (≈−91 mV) contrast profiles with hole (5.09 × 1012 cm−2) and electron (4.74 × 1012 cm−2) charge densities. Also, the 17 h time‐lapse enables the holes and electrons CPD mapping diameter shrinkage by ≈32% and 46%, respectively. In furtherance, a conductive filament model for host‐guest proton‐assisted conduction with charge hopping through fixed/mobile ions is proposed. [ABSTRACT FROM AUTHOR]

Magnetic 2D materials have emerged as a great interest in spintronics due to atomic thickness scaling, low energy switching, and ease in the manipulation of spins. This report demonstrates a facile, bottom‐up, chemical vapor deposition approach for non‐van der Waals (non‐vdWs), 2D chromium (III) sulfide (Cr2S3) with c‐axis orientation, out‐of‐plane magnetic anisotropy (easy axis), and ferrimagnetic ordering. Importantly, the anisotropic magnetic saturation and resistivity of 10.23 mΩ cm reveal a narrow bandgap ferrimagnetism in Cr2S3 (∆EActivation ≈ 22 meV and Eg ≈ 40 meV). The prototype lateral spin‐channel Al/Cr2S3/Al devices exhibit a negative magnetoresistance of ≈25% and ≈15% at 100 K (below Néel temperature) for few‐layer (≈8 nm) and thin‐film (≈50 nm) device structures, respectively, owing to itinerant ferrimagnetism of Cr2S3. The magnetic field‐induced spin polaron formations are quite resilient and enhance the field‐dependent carrier conduction, making it greatly useful for negative magnetoresistance operation. These prototype Al/Cr2S3/Al structures have demonstrated a low power (≈2 µW for 8 µm channel at 10 µA current) operation with a negative field‐dependent resistance coefficient (rM) of ≈−5 × 10−4 Oe−1. The computed rM magnitude is tenfold higher than the bulk Cr2S3. This study identifies the potential of non‐vdW Cr2S3 toward new and robust 2D‐based spintronic applications. [ABSTRACT FROM AUTHOR]

The suitability of metal‐organic frameworks (MOFs) as functional materials for future electronic logic devices with desirable dielectric constant, bandgap, high‐quality interface, low leakage current, and better compatibility is still an open challenge. Owing to the synergistic complementary properties of MOFs systems, a low‐cost copper‐metal‐organic nanoclusters (Cu‐MOCs) has been synthesized comprising inorganic copper metal unit allied organic m‐toluic acid ligand by facile sol–gel strategy. It offers large‐area thin‐films uniformity, high dielectric constant (κ ≈ 5.49), improved interfacial properties, dynamic switching behavior with the stimuli field, and extends the realization of metal‐organic‐framework dielectric for scalable complementary‐metal‐oxide‐semiconductor (CMOS) logic applications over customary hybrid counterparts. Various techniques such as single crystal X‐ray diffraction, X‐ray photoelectron spectroscopy, thermogravimetric analysis, and energy dispersive X‐ray spectroscopy have been used to validate the Cu‐MOCs formulation. In particular, the fabricated Cu‐MOCs, metal–insulator–semiconductor structures exhibit promising dynamic switching behavior responsive to the applied field, hysteresis‐free capacitance–voltage characteristics, low interfacial trap density (≈1.4 × 1011 eV−1 cm−2), low effective oxide charges (≈1.1 × 1011 cm−2), and noteworthy small leakage current density (≈1.29 nA cm−2 @ 1 V) ever since in electrical analysis. Cost‐effective novel Cu‐MOCs successfully demonstrate high‐performance, reliable gate dielectrics for next‐generation CMOS logic devices. [ABSTRACT FROM AUTHOR]

This study presents the analysis and design of reduced switching (RSw) activity mode successive approximation register (SAR) analogue‐to‐digital (A‐to‐D) algorithm. For given analogue‐to‐digital converter (ADC) specifications, RSw mode design is based on the observation that the signal variation in two successive samples becomes linear over a certain range of input frequencies. Hence, dispensable switching activity between the two samples can be eliminated by enabling periodic temporal reference to the converter. No prediction or logic circuitry is required to extract information from previous bits. However, there exists a trade‐off between the input frequency and the sampling frequency. A design criterion is derived using numerical mathematics to skip evaluation of the optimum number of bits while maintaining the desired signal‐to‐noise and distortion ratio. The design criterion is validated through behavioural simulations using MATLAB/Simulink®. Furthermore, a fully differential 10‐bit, 104 kS/s ADC is designed in a standard 180 nm CMOS technology to demonstrate circuit implementation of the RSw mode. In the RSw mode, power dissipation in the comparator and relevant digital circuitry decreases by 20%. The ADC achieves low‐frequency effective number of bits of 9.7 bits and spurious free dynamic range of 68.3 dB. With 1.8 V supply voltage, average power dissipation in the core ADC is 2.54 μW; resulting in figure‐of‐merit of 29.3 fJ/conv‐step. [ABSTRACT FROM AUTHOR]

A symbolic analysis is presented to study a gain‐boosted telescopic operational transconductance amplifier (OTA) with cross‐coupled capacitor (positive feedback) across an auxiliary op‐amp. The effects of positive feedback capacitor (PFC) on the pole–zero doublet introduced by the auxiliary op‐amp are explored using analytical techniques and simulations. A complete transfer function of the OTA with PFC across the auxiliary op‐amp is derived and verified through circuit simulations. The results obtained from circuit simulation and modelled transfer function show good agreement with each other. Furthermore, the analytical expressions for the feedback capacitor in terms of pole–zero locations, unity gain bandwidth (UGBW) and phase margin (PM) are presented. It is shown that UGBW, PM and settling behaviour of the OTA can be tuned by the PFC. A systematic design approach to improve the PM and settling behaviour is discussed. On the basis of the theory presented, 17% improvement in 0.01% settling time is demonstrated. [ABSTRACT FROM AUTHOR]

Two new polyoxometalate (POM)-based hybrid monomers (Bu4N)5(H)[P2V3W15O59{(OCH2)3CNHCO(CH3)CCH2}] ( 2) and (S(CH3)2C6H4OCOC(CH3)=CH2)6[PV [ABSTRACT FROM AUTHOR]