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ABSTRACT Objective Methods Results Conclusions Charcot arthropathy is characterized by varying degrees of sensory loss and rapidly progressive joint destruction. Historically, limited studies indicated that Charcot arthropathy of the hip joint may be a contraindication for total hip arthroplasty (THA). Yet, some recent studies have shown that good clinical results and acceptable survival rate. Hence, this study aimed to investigate clinical outcomes, radiographic outcomes, complication rates and survivorship of primary THA in Charcot arthropathy.We retrospectively included 11 patients (11 hips) with Charcot arthropathy who underwent THA between 1998 and 2016. All involved patients were diagnosed as syphilis. All patients had classic radiographic findings of Charcot arthropathy. The hip braces were used in all patients for six weeks after surgery. Outcome measures included VAS, Oxford Hip Score, and UCLA score. Statistical analyses involved t‐tests, chi‐square tests, and Kaplan–Meier survival analysis.The average follow‐up period was 81.73 months. The average VAS, Oxford Hip Score, and UCLA score were improved significantly. There was higher complication rate of 45.5% after THA. Reoperation was carried out in two patients due to dislocation and acetabular component loosening. The Kaplan–Meier survivorship with an end point of reoperation for any reason was 81.8%.THA is proved to be reasonable in improving hip joint function, which is suitable for patients with Charcot hip joint. Although the complication rate is high, we consider that THA combined with hip brace may be a valid treatment choice for Charcot arthropathy with detailed preoperative planning and proper precautions. [ABSTRACT FROM AUTHOR]

As an advanced signal source, laser is very suitable for various photonic devices but implementing tunability of wavelength is more challenging. Herein, the study designs and synthesizes boron difluoride derivative tBuBF2, systematically studying the impact of assembly behavior on laser performance. The laser test results indicate that the emission wavelength of tBuBF2 microcrystals can be controlled by varying the length of the microcrystals, with the shorter wavelength of 0–1 vibronic lasing emission at 444 nm and the longer wavelength of 0–2 lasing emission at 468 nm. Mechanistic studies reveal that laser color change comes from an increase in optical propagation losses due to self‐absorption at the 0–1 vibronic band. Furthermore, CBP@tBuBF2 microcrystals constructed by doping with 4,4′‐bis(9‐carbazolyl)‐1,10‐biphenyl (CBP) as the guest molecule, which primarily exhibits 580 nm exciplex yellow emission while retaining weak blue emission. Moreover, it is demonstrated that the laser emission only occurred within the 0–2 vibronic band in the blue region owing to the increased self‐absorption phenomenon with 0–1 band, thus achieving controllable dual‐wavelength and exciplex emission for laser concealment. This work expands novel regulation strategy available for laser behavior control by enhancing the self‐absorption process, describing structure‐property relationships that will guide the design of advanced laser materials. [ABSTRACT FROM AUTHOR]

Summary: Multiple distinct specialized regions shape the architecture of maize leaves. Among them, the fringe‐like and wedge‐shaped auricles alter the angle between the leaf and stalk, which is a key trait in crop plant architecture. As planting density increased, a small leaf angle (LA) was typically selected to promote crop light capture efficiency and yield. In the present study, we characterized two paralogous INDETERMINATE DOMAIN (IDD) genes, ZmIDD14 and ZmIDD15, which contain the Cys2‐His2 zinc finger domain and function redundantly to regulate auricle development and LA in maize. Loss‐of‐function mutants showed decreased LA by reducing adaxial sclerenchyma thickness and increasing the colourless cell layers. In addition, the idd14;idd15 double mutant exhibited asymmetrically smaller auricles, which might cause by a failed maintenance of symmetric expression of the key auricle size controlling gene, LIGULELESS(LG1). The transcripts of ZmIDD14 and ZmIDD15 enriched in the ligular region, where LG1 was highly expressed, and both proteins physically interacted with ZmILI1 to promote LG1 transcription. Notably, the idd14;idd15 enhanced the grain yield of hybrids under high planting densities by shaping the plant architecture with a smaller LA. These findings demonstrate the functions of ZmIDD14 and ZmIDD15 in controlling the abaxial/adaxial development of sclerenchyma in the midrib and polar development along the medial‐lateral axes of auricles and provide an available tool for high‐density and high‐yield breeding in maize. [ABSTRACT FROM AUTHOR]

The quality of perovskite films plays a fundamental role in determining the performance of perovskite solar cells (PSCs). It is widely recognized that achieving high crystalline quality and minimizing defect density in perovskite films are essential. In this study, the utilization of the multifunctional additive 5‐ammonium acid (5‐AVA) to improve the morphology of perovskite films is proposed. The ‐NH2 and ‐COOH groups in 5‐AVA enable effective coordination with Pb ions and organic ions in perovskite, resulting in the suppression of defect formation and the reduction of non‐radiative recombination losses. Furthermore, the addition of 5‐AVA facilitates a more favorable energy level alignment, thereby enhancing the transfer of carriers between the perovskite layer and transport layers. Consequently, this process contributes to the improvement of the open circuit voltage (VOC) in PSCs. Attributing to the addition of 5‐AVA, the optimized PSCs achieve significantly enhanced performance with a maximum photoelectric conversion efficiency (PCE) of 24.74% and excellent long‐term stability. This work presents a straightforward and effective approach to enhance the performance and long‐term stability of PSCs. [ABSTRACT FROM AUTHOR]

Multifunctional organic photodetectors (MFOPDs) have garnered significant attention due to their remarkable potential for integrating diverse device functionalities. In contrast to previous MFOPDs that have primarily emphasized the integration of various response bands, a pioneering multifunctional photodetector is introduced based on the P3HT:PC61BM system capable of selectively responding to both wavelength and polarization. Under positive bias, the device operates in a wide‐band, polarization‐insensitive mode, achieving an external quantum efficiency (EQE) of up to 7.01 × 104%. The EQE dichroic ratio (DR) of the device remains <1.01 (at 650 nm). Conversely, under negative bias, the device transitions into a narrow‐band, polarization‐sensitive mode, achieving an EQE of up to 4.82 × 104% with a narrow full width at half maximum (FWHM) of only 25 nm at 650 nm. The EQE DR exceeds 10 in this mode, marking it as one of the highest values within the field of polarization‐sensitive organic photodetectors. This versatile operation is made possible through the strategic use of double‐sided barriers, an oriented light harvesting layer, and a charge injection narrowing (CIN) approach. This work represents a significant advancement toward the realization of multifunctional photodetectors capable of selecting response bands and polarization sensitivity. [ABSTRACT FROM AUTHOR]

Over the past few decades, the overuse of antibiotics has raised concerns about drinking water and potential health risks, especially the hydrochloride tetracycline (TC‐HCl). Therefore, it is crucial to develop a simple, low‐cost and high‐efficiency photocatalyst for the degradation of the pollutant. A novel photocatalyst with an S‐scheme heterojunction structure of AgIn5S8 and Bi2MoO6 was synthesized by using a solvothermal method. The heterojunction photocatalyst obtained demonstrates superior photocatalytic degradation activity for hydrochloride tetracycline (TC‐HCl) under visible light irradiation. It exhibits higher photocatalytic degradation performance than pure AgIn5S8 and Bi2MoO6 under the same conditions. The heterojunction with 3 % AgIn5S8 exhibited the highest degradation efficiency of 63.65 % within 40 minutes. Furthermore, the degradation rate is 6.21 times higher than that of AgIn5S8 and 2.18 times higher than that of Bi2MoO6. The improved photocatalytic activity is primarily attributed to the enhanced light absorption and the high rate of carrier separation resulting from S‐scheme heterojunctions. [ABSTRACT FROM AUTHOR]

The single‐layer organic light‐emitting devices provide a promising way for low‐cost, large‐area displays. Iridium (III) complex may play an important role to achieve this target due to its unique ionic characteristics. To achieve high‐performance single‐layer devices, blending the salt additives into the active layer is an effective strategy. However, the effects of different cation and anion additives on the device's performance are still unclear. Herein, the single‐layer light‐emitting devices are fabricated by using solution‐processed iridium (III) complex mixed with various molecular salts. It is implied in the results that the improvement of the device luminescence and recombination efficiency is owing to the enhanced carrier injection and improved carrier balance in the emitting layer by the ion‐additive‐induced electrical double layer at the interface. The smaller cation can improve the carrier injection of the device more efficiently due to the stronger ion mobility and the anion with the smaller association coefficient shows a better device performance since the stronger dissociation ability of the ions can lead to a better ion migration ability. In addition, the introduction of poly (methyl methacrylate) into the active film can improve the single‐layer device performances by reducing leak current in bulk. [ABSTRACT FROM AUTHOR]

Broadband photodetectors are essential for the integrated design of next‐generation optical detector devices. Ternary 2D bismuth sulfide semiconductor (BiXI, X = S, Se, Te) is an ideal candidate for broadband photoelectric detection due to its narrow bandgap and excellent electrical transport performance. Here, BiSeI is grown by chemical vapor transport (CVT) method and used in photoelectrochemical (PEC) photodetection. The PEC‐type photodetector based on BiSeI nanosheets has a broadband detection ranging from 350 to 900 nm, displaying a high responsivity of 2.88 mA W−1, a high detectivity of 1.10 × 1010 Jones and a fast response time of 7/16 ms at a bias voltage of 0.5 V. Furthermore, the device also exhibits a negligible current density loss after three months, which indicates that it has good stability against air and moisture. In addition, the photodetector can work without bias potential, indicating that it is a good self‐powered device. The results demonstrate that BiSeI is a potential material in self‐powered PEC photodetector. [ABSTRACT FROM AUTHOR]

The two categories of organic photodetectors (OPDs) can be distinguished as the photodiode mode and the photoconductor mode. The role of the contact between the electrode and active layer in determining the specific type of photodetector is of utmost importance. In this study, the transition of working modes between the photodiode type and the photoconductor type in OPDs is demonstrated. Specifically, OPDs based on the indium tin oxide/Cs2CO3/P3HT: PC61BM/Al (or Au) structure are fabricated. In the corresponding characterization results, distinct working modes are showcased. For the device with the Au electrode, under reverse bias, the photo‐generated charges can efficiently transport to their respective electrodes and subsequently be collected. This behavior aligns with the photodiode type. Conversely, in the device with the Al electrode, the photo‐generated charges accumulate near the interface between the Cs2CO3 layer and the active layer. Subsequently, under reverse bias, tunneling charge injection occurs, resulting in the photoconductor type with an external quantum efficiency exceeding 100%. Both the photodiode and photoconductor devices exhibit a high signal‐to‐noise ratio ranging from 104 to 105 and fast response on the order of microseconds at −0.5 V. In these findings, the possibility of obtaining desirable working‐mode OPDs by manipulating the electrode work function is suggested. [ABSTRACT FROM AUTHOR]

Herein, a single‐layer light‐emitting transistor with a good on/off ratio of more than 106 is presented based on the iridium complex as a light‐emitter layer. Comprehensive experiments and simulations demonstrate that the thickness of the emitting layer can significantly improve the majority carrier injection in the source electrode. The electrode work function determines the minority carrier injection in the drain electrode, which is crucial for the light emission of the transistor. Furthermore, the increased source injection allows for a higher channel current, thereby increasing drain injection. Most importantly, although the above methods can improve the device channel current and light‐emitting brightness, the electroluminescence efficiency cannot be optimized since the increased minority carriers are much less than the increased majority carriers, resulting in most increased majority carriers cannot be contributed to the charge recombination. To achieve a higher efficient device, the channel current is supposed to be low when a conductive channel is well formed. This goal is achieved by using an ionic liquid gate to replace SiO2 gate for fabricating the light‐emitting single‐layer transistor. The efficiency is improved from ≈0.1 to 1.5 cd A−1. This work provides a new strategy for constructing high‐performance single‐layer light‐emitting transistors. [ABSTRACT FROM AUTHOR]

The electrolyte serves as a key component in organic electrochemical transistors (OECTs) and allows for the modulation of the conductivity of the polymer channel by applying a voltage to the gate electrode. Different from liquid electrolytes in OECTs, the solid electrolyte is beneficial for the integration in the circuit and shows great stability. And considering the fabrication of the device, developing a new solution‐processed solid electrolyte for OECTs is a critical area of research. In this work, the organic–inorganic perovskite is used as the electrolyte to fabricate polymer electrochemical transistors due to its solid‐phase ion migration kinetics. To realize this goal, a separate polyethylene oxide (PEO) layer on top of the poly[2‐methoxy‐5‐(2‐ethylhexyloxy)‐1,4‐phenylenevinylene] (MEH‐PPV) layer plays a crucial role since it can affect the electric field and the ion motion. More importantly, based on this device structure, both a polymer light‐emitting electrochemical transistor and the polymer electrochemical phototransistor are realized. The solution‐processed solid organic–inorganic perovskite electrolytes can enable the development of integration in OECTs, which have significant potential for multifunctional applications. [ABSTRACT FROM AUTHOR]

Self‐powered and flexible photodetectors exhibit great potential in the application of optical communication, deep space exploration, and other related fields. Herein, a self‐powered ultraviolet photodetector based on ZnO nanowires/Te nanowires heterojunction has been prepared by two‐step vacuum filtration method, which also has superior flexibility and fast response speed. The obtained photodetector has a high photocurrent (about 1 μA) at 5 V bias under 365 nm UV light illumination and a fast response speed (3.47/0.13 s). Even if the bending angle reaches 90°, its photocurrent still maintains about 0.5 μA under 5 V bias, showing superior flexibility. Under 0 V bias, the photocurrent of the photodetector is 0.18 nA and the response time is 65/140 ms, displaying its good self‐powered characteristic and fast response speed. These superior properties are caused by the flexibility of ZnO nanowire film and Te nanowire film, and the heterojunction is formed between ZnO and Te. The obtained results provide a solid foundation for the further development of flexible optoelectronic devices based on ZnO nanostructures. [ABSTRACT FROM AUTHOR]

Methylammonium (CH3NH2, MA) lead halide single crystals have attracted attention due to their excellent properties, such as tunable bandgap, high absorption efficiency, long carrier diffusion length, low non‐radiative recombination rate, high gain efficiency, and ultra‐low trap state density. However, excellent methylammonium lead bromine (MAPbBr3) microdisk laser arrays reported at present mainly rely on nanoimprint or inkjet printing technology, which highly depends on the equipment. Herein, an approach to prepare high‐quality MAPbBr3 microdisk arrays is developed in which well‐aligned microdisk arrays grow via partial dissolution and recrystallization of dendrites induced by Marangoni flow in a solution self‐assembly growth process. On the same dendrite, the growth direction of the microdisk crystals is highly consistent, and the crystal size distribution is uniform. Besides, the MAPbBr3 microdisks show excellent laser performance with a low threshold of 43.3 µJ cm−2 and a high Q factor (Q = 2072). The small volume and high‐quality square MAPbBr3 perovskite microdisks have great potential in the application of integrated photoelectric lasers. [ABSTRACT FROM AUTHOR]

Recently, ZnO and polyethyleneimine ethoxylated (PEIE) have been, respectively, applied to modify ITO to achieve the polymer photodetectors (PPDs) with a similar high detectivity of 1012 Jones. The ZnO device shows a lower dark current due to the surface defect states of ZnO, while the PEIE device exhibits a higher photocurrent because of the formed PEIE dipole layer on ITO. Therefore, the former has a higher linear dynamic range (LDR) of about 100 dB and a lower external quantum efficiency (EQE) of 200%, while the latter has a higher EQE of about 2000% and a lower LDR of 60 dB. This work demonstrates a strategy of combing the advantages of both devices using PEIE and ZnO co‐modified ITO. The resulting device exhibits an increased photocurrent and a reduced dark current, leading to overall enhanced performances with EQE of 1703%, responsivity of 7.55 A W−1, detectivity of 4.88 × 1013 Jones, and LDR of 117 dB under −0.3 V. The key of the co‐modification is that PEIE must directly modify ITO to form the electrical dipole layer and ZnO needs to be in contact with the active layer so that the surface defects can act as carrier trapping centers. [ABSTRACT FROM AUTHOR]

The performance of perovskite solar cells is greatly affected by the crystallization of the perovskite active layer. Perovskite crystal grains should neatly arrange and penetrate the entire active layer for an ideal perovskite crystallization. These kinds of crystallized perovskite films exhibit fewer defects and longer carrier lifetime, which is beneficial to enhance the performance of perovskite solar cells. Here, by testing the residual charge of perovskite solar cells with different crystallization conditions, it is demonstrated that the residual charge exists widely at the grain boundary, which is parallel to the device, and the residual charge is related to the performance of the perovskite solar cells. Single crystal grains neatly arranged and penetrate the entire active layer can generate less residual charge and improve device performance of the perovskite solar cells. The results also show that the long decay time of open‐circuit voltage comes from the detrapping of trapped carriers. The residual charge testing technology provides a new idea for the investigation of carrier trap and detrap characteristics in photovoltaic devices. [ABSTRACT FROM AUTHOR]

The optoelectronic characteristics of organic–inorganic perovskites can be tailored by mixing different metal cations with various ratios. 2D layered organic–inorganic perovskites with charge transport anisotropy are considered as promising channel materials for field‐effect transistors. However, there are few reports about 2D Pb‐based perovskite thin film transistors although their Sn counterparts have been extensively investigated for use in this field. Herein, the synthesis and tuning of the physical properties of 2D layered Sn–Pb perovskite solid solutions based on phenylethylammonium tin and lead iodide perovskites ((PEA)2SnxPb1−xI4 (x = 0, 0.3, 0.5, 0.7, 1)) are reported. A thermally activated semiconducting behavior is confirmed in this series of perovskite thin films. The electronic band structure, conductivity, and in‐plane ion migration are found to be largely affected by the Sn–Pb ratio, which is important for transistor performance. Furthermore, the 2D layered mixed Sn–Pb perovskite field‐effect transistors constructed on cheap and commercially available polymer dielectrics and a signature of field‐effect characteristics in the (PEA)2PbI4 film are demonstrated for the first time. The (PEA)2Sn0.7Pb0.3I4 transistor operating at room temperature in air exhibits a hole mobility of 0.02 cm2 V−1 s−1. This work can improve the understanding of the influence mechanisms of ion migration in 2D layered perovskite field‐effect transistors. [ABSTRACT FROM AUTHOR]

A metal oxide interfacial layer is introduced into polymer photodetectors (PPDs) to achieve low dark current and high photocurrent. Although the defects of the metal oxide play a key role in device operation, defect effects on PPDs are poorly understood. Herein, PPDs using nanoparticle (NP) and amorphous zinc oxide (ZnO) films as the indium tin oxide (ITO) modification layer are realized and characterized, and the former device shows high performance in every figure of merit: external quantum efficiency of 1980%, detectivity of 1.03×1014 Jones, responsivity of 9.51 A W−1, response time of ≈10 μs, and linear dynamic range of over 100 dB at a low reverse bias. The comparison of the NP ZnO and amorphous ZnO‐based devices and the ultraviolet (UV) light illumination effect on the devices imply the underlying operation mechanism. The surface defects in the ZnO NPs efficiently block external charge injection, whereas the defect‐induced photogenerated charge accumulation at the interface between the ZnO layer and the active layer leads to a tunneling current under illumination. This methodology provides universal guidance for fabricating high‐performance PPDs based on a metal oxide interfacial layer. [ABSTRACT FROM AUTHOR]

Fabrication of nanowires in polymer films can dramatically enhance the mobility of thin‐film transistors (TFTs). Unlike the popular method of forming nanowires after spin‐coating films, here a water‐bath method to fabricate the micrometer‐long nanowires in the poly(3‐hexylthiophene) (P3HT) solution is introduced, which is suitable for large‐area printing electronic application. The resulting transistor exhibits significantly enhanced mobility and excellent device stability. However, the threshold voltage of the device is increased, compared with the amorphous film device. The underlying mechanism of the mesoscale crystalline induced threshold voltage increase has been rarely studied. The temperature‐dependent characteristics imply that the activation energy of the device with nanowires is higher than that of the amorphous one, indicating nanowires can introduce deep traps. This suggests that the charge transport is mainly limited by the deep traps at the junctions between the nanowires considering the trap density inside the nanowires is significantly low. The deep traps introduced by the junctions can increase the threshold voltage as the device needs higher voltage to fill these traps in the channel before the device is turned on. This explains why the devices with nanowires have an increased threshold voltage while their mobilities are dramatically enhanced. [ABSTRACT FROM AUTHOR]

Multinary copper chalcogenide semiconductor nanocrystals (NCs) have achieved increased attention due to their lessened toxicity and compositional versatility as well as their outstanding optical properties and optoelectronic applications in light‐emitting diodes (LEDs) and solar cells. Herein, the synthesis of highly luminescent multinary Cu‐In‐Zn‐S semiconductor NCs with tailored nanostructures, which exhibit the best absolute photoluminescence quantum yield of 90%, is presented. The tailored nanostructures are realized through the variation of the dosage and injection speed of Zn precursors, which determine the balance between Zn2+ cation diffusion and ZnS shelling reaction. The depth profile measured using X‐ray photoelectron spectroscopy reveals the gradient distribution of Zn elements from core to surface in the samples synthesized using higher feeding amounts of Zn precursors in a one‐pot method, which favors the formation of a soft core/shell structure. Time‐resolved spectroscopic studies confirm that the inward diffusion of Zn2+ and overcoating of a ZnS shell could reduce the number of intrinsic internal or surface defects, finally inducing a near‐unity radiative decay of excitons in single recombination pathway. As a demonstration, the highly luminescent multinary Cu‐In‐Zn‐S semiconductor NCs are incorporated into LEDs and a white light‐emitting diode is accessed through a two‐component strategy. [ABSTRACT FROM AUTHOR]

In organic or perovskite photovoltaic‐type devices, to improve device performance, the thermal and ultraviolet–ozone (UVO) treatments are usually critical for the metal oxide film fabrication by removing the interfacial layer induced defects. However, the defects might play the opposite role in photoconductive photodetectors, where the defect‐induced photogenerated charge accumulation can lead to a tunneling current. Herein, a high‐performance solution‐processed broadband organic photodetector (OPD) in the visible wavelength is realized and characterized by introducing the non‐thermal‐and‐non‐UVO‐treated SnO2 nanoparticle film between the indium tin oxide (ITO) electrode and the active layer of the poly(3‐hexylthiophene) (P3HT):phenyl‐C61‐butyric‐acid‐methyl‐ester (PC61BM) blend. The untreated SnO2 nanoparticle layer can efficiently block the external charge injection, which considerably reduces the dark current density. Under illumination, the photogenerated charges are accumulated at the interface between the SnO2 layer and the active layer, and thus contribute a tunneling injection, resulting in a significantly high photocurrent. Therefore, the OPD shows a high performance in every figure of merit: external quantum efficiency (EQE) of 1430%, responsivity of 6.97 A W−1, detectivity of 2.29 × 1013 Jones, and −3 dB bandwidth of 2.8 MHz. The solution‐processed high‐performance photodetectors without thermal and UVO treatments are highly compatible with low cost, flexible, and large‐area electronics. [ABSTRACT FROM AUTHOR]

Objective. This study aimed to analyze the effects of comprehensive protection of bilateral parotid glands (PG-T), contralateral submandibular gland (cSMG), and accessory salivary glands in the oral cavity (OC) by helical tomotherapy for head-and-neck cancer patients. Methods. Totally 175 patients with histologically confirmed head-and-neck cancer treated with helical tomotherapy were recruited. The doses delivered to PG-T, cSMG, and OC were constrained to be as low as possible in treatment planning. The saliva flow rates and xerostomia questionnaire were evaluated. Correlation between xerostomia and other clinical factors were assessed using univariate and multivariate models. The impact of salivary gland dose on locoregional (LR) recurrence was assessed by Cox analysis. ROC curve was used to determine the threshold of mean dose for each gland. Results. The median follow-up was 25 (19–36) months. The OC mean dose, PG-T mean dose, cSMG mean dose, age, clinical stage (II and III versus IV), and both unstimulated and stimulated saliva flow rates were significantly correlated with xerostomia. The OC mean dose, cSMG mean dose, age, and clinical stage were predictors of xerostomia after adjusting PG-T mean dose, and unstimulated and stimulated saliva flow rates. Xerostomia was significantly decreased when the mean doses of PG-T, cSMG, and OC were kept below 29.12Gy, 29.29Gy, and 31.44Gy, respectively. At 18 months after radiation therapy, early LR recurrence rate was only 4%. Conclusion. Comprehensive protection of salivary glands minimized xerostomia in head-and-neck cancer patients treated by helical tomotherapy, without increasing early LR recurrence risk. [ABSTRACT FROM AUTHOR]

Semiconductor‐based photodetectors (PDs) convert light signals into electrical signals via the photoelectric effect, which involves the generation, separation, and transportation of the photoinduced charge carriers, as well as the extraction of these charge carriers to external circuits. Because of their specific electronic and optoelectronic properties, metal oxide semiconductors are widely used building blocks in photoelectric devices. However, the compromise between enhancing the photoresponse and reducing the rise/decay times limits the practical applications of PDs based on metal oxide semiconductors. As the behaviors of the charge carriers play important roles in the photoelectric conversion process of these PDs, researchers have proposed several strategies, including modification of light absorption, design of novel PD heterostructures, construction of specific geometries, and adoption of specific electrode configurations to modulate the charge‐carrier behaviors and improve the photoelectric performance of related PDs. This review aims to introduce and summarize the latest researches on enhancing the photoelectric performance of PDs based on metal oxide semiconductors via charge‐carrier engineering, and proposes possible opportunities and directions for the future developments of these PDs in the last section.Charge‐carrier engineering is frequently utilized to break the compromise between enhancing sensitivity and reducing response times in photodetectors based on metal oxide semiconductors. Various strategies aiming to modulate the behaviors of charge carriers and enhance the photoelectric performance are summarized, and possible trends for the future development of these photodetectors are proposed. [ABSTRACT FROM AUTHOR]

Abstract: Lithium‐ion batteries (LIBs) have been widely applied in portable electronics (laptops, mobile phones, etc.) as one of the most popular energy storage devices. Currently, much effort has been devoted to exploring alternative high‐capacity anode materials and thus potentially constructing high‐performance LIBs with higher energy/power density. Here, high‐capacity anode nanomaterials based on the diverse types of mechanisms, intercalation/deintercalation mechanism, alloying/dealloying reactions, conversion reaction, and Li metal reaction, are reviewed. Moreover, recent studies in atomic‐scale storage mechanism by utilizing advanced microscopic techniques, such as in situ high‐resolution transmission electron microscopy and other techniques (e.g., spherical aberration‐corrected scanning transmission electron microscopy, cryoelectron microscopy, and 3D imaging techniques), are highlighted. With the in‐depth understanding on the atomic‐scale ion storage/release mechanisms, more guidance is given to researchers for further design and optimization of anode nanomaterials. Finally, some possible challenges and promising future directions for enhancing LIBs' capacity are provided along with the authors personal viewpoints in this research field. [ABSTRACT FROM AUTHOR]

Abstract: A series of multinary Cu‐In‐Zn‐Se‐S nanocrystals (NCs) are synthesized via a phosphine‐free and one‐pot approach, in which the Se powder and 1‐dodecanethiol (DDT) are used as chalcogenide sources, respectively. The X‐ray photoelectron spectra are used to confirm the presence of lattice sulfur in the as‐obtained products. The emission color and the relative photoluminescence quantum yields of the Cu‐In‐Zn‐Se‐S NCs can be tuned by varying the Cu contents, the amount of Se powder, as well as the DDT dosage. In addition, the formation process of the multinary Cu‐In‐Zn‐Se‐S NCs is different from that of quaternary Cu‐In‐Zn‐S NCs, which is dominated by the doping of Cu ions into the In‐deficient In‐Zn‐Se‐S NCs but not the partial interdiffusion of Zn2+ into the Cu‐based NCs. This plausible deduction is based on the comparison of optical properties of the products synthesized using the hot‐injection and one‐pot methods. Furthermore, the performance of the solution‐processed quantum‐dot light‐emitting diodes (QLEDs) using the Cu‐In‐Zn‐Se‐S NCs as emission layers is examined, and the QLEDs exhibit a high luminance over 1500 cd m−2 and a high peak current efficiency of ≈0.4 cd A−1 at 1000 cd m−2. [ABSTRACT FROM AUTHOR]

Abstract: BiOCl nanosheets/TiO2 nanotube arrays heterojunction UV photodetector (PD) with high performance is fabricated by a facile anodization process and an impregnation method. The heterojunction at the interface and the internal electric fields in the BiOCl nanosheets faciliate the separation of photogenerated charge carriers and regulate the transportation of the electrons. Compared with the large dark current (≈10−5 A), low on/off ratio (8.5), and slow decay time (>60 s) of the TiO2 PD, the optimized heterojunction PD (6‐BiOCl–TiO2) yields dramatically decreased dark current (≈1 nA), ultrahigh on/off ratio (up to 2.2 × 105), and fast decay speed (0.81 s) under 350 nm light illumination at −5 V. Moreover, it exhibits an increased responsivity of 41.94 A W−1, a remarkable detectivity (D*) of 1.41 × 1014 Jones, and a high linear dynamic range of 103.59 dB. The loading amount and growth orientations of the BiOCl nanosheets alter the roles of the self‐induced internal electric field in regulating the behaviors of the charge carriers, thus affecting the photoelectric properties of the heterojunction PDs. These results demonstrate that rational construction of novel heterojunctions hold great potentials for fabricating photodetectors with high performance. [ABSTRACT FROM AUTHOR]

Abstract: Single crystal microwires of a well‐studied organic semiconductor used in organic solar cells, namely p‐DTS(FBTTh2)2, are prepared via a self‐assembly method in solution. The high level of intermolecular organization in the single crystals facilitates migration of charges, relative to solution‐processed films, and provides insight into the intrinsic charge transport properties of p‐DTS(FBTTh2)2. Field‐effect transistors based on the microwires can achieve hole mobilities on the order of ≈1.8 cm2 V−1 s−1. Furthermore, these microwires show photoresponsive electrical characteristics and can act as photoswitches, with switch ratios over 1000. These experimental results are interpreted using theoretical simulations using an atomistic density functional theory approach. Based on the lattice organization, intermolecular couplings and reorganization energies are calculated, and hole mobilities for comparison with experimental measurements are further estimated. These results demonstrate a unique example of the optoelectronic applications of p‐DTS(FBTTh2)2 microwires. [ABSTRACT FROM AUTHOR]

Sr4- xSi3O8Cl4: xEu3+ ( SSOC:Eu3+) phosphors were successfully synthesized by hydrothermal method. The crystallization of this phosphor was analyzed by means of X-ray diffraction patterns. The size and morphology were recorded using SEM patterns of samples. And the PLE and PL spectra were characterized by a PL spectrophotometer. Excited by 394 nm UV light, the intense red emission is recognized in SSOC:Eu3+ phosphor and the main emission peak located at 620 nm. The influences of Eu3+ concentration, pH value of reaction solution, and charge compensator on PL spectra of SSOC:Eu3+ phosphors were investigated. The results revealed that this red phosphor had potential applications for white LEDs. [ABSTRACT FROM AUTHOR]

Abstract: Graphene nanodots (GNDs) are one of the most attractive graphene nanostructures due to their tunable optoelectronic properties. Fabricated by polystyrene‐nanosphere lithography, uniformly sized graphene nanodots array (GNDA) is constructed as an ultraviolet photodetector (PD) with ZnO nanofilm spin coated on it. The size of GNDA can be well controlled from 45 to 20 nm varying the etching time. It is revealed in the study that the photoelectric properties of ZnO/GNDA PD are highly GNDA size‐dependent. The highest responsivity (R) and external quantum efficiency of ZnO/GNDA (20 nm) PD are 22.55 mA W−1 and 9.32%, almost twofold of that of ZnO PD. Both ZnO/GNDA (20 nm) PD and ZnO/GNDA (30 nm) PD exhibit much faster response speed under on/off switching light and have shorter rise/decay time compared with ZnO PD. However, as the size of GNDA increase to 45 nm, the PD appears poor performance. The size‐dependent phenomenon can be explained by the energy band alignments in ZnO/GNDA hybrids. These efforts reveal the enhancement of GNDs on traditional photodetectors with tunable optoelectronic properties and hold great potential to pave a new way to explore the various remarkable photodetection performances by controlling the size of the nanostructures. [ABSTRACT FROM AUTHOR]

The design of nanostructure plays an important role in performance enhancement of low-dimensional optoelectronic devices. Herein, a novel photodetector (PD) based on electrospun SnO2 nanofibers with Ω-shaped ZnO shell (SnO2@ZnO) is fabricated. With 87.4% transmittance at 550 nm, SnO2@ZnO PD exhibits a high photo-to-dark current ratio up to 104 at around 280 nm. Owing to the additional Ω-shaped ZnO shell, SnO2@ZnO PD possesses a responsivity of nearly 100 A W−1 under 5 V bias and the illumination of 250 nm light, which is 30-time enhancement of pristine SnO2 PD. The enhancement is mainly attributed to type-II energy band structure. Furthermore, by changing the direction of incident light, SnO2@ZnO PD has a high UV selectivity with an UV-vis rejection ratio ( R250 nm/ R400 nm) as much as 2.0 × 103 at 5 V bias under back illumination, which is fourfold higher than that under face illumination. The UV selectivity improvement may be attributed to light confinement in the Ω-shaped structure. With both theoretical simulations and experimental comparisons, it is demonstrated that the unique compact Ω-shaped nanostructure does contribute to photon trapping and gaining process, especially in back-illumination configuration. The approach can be easily extended to other materials, preparing novel building blocks for optoelectronic devices. [ABSTRACT FROM AUTHOR]

A high-performance UV photodetector (PD) based on a p-Se/n-ZnO hybrid structure with large area (more than 1×1 cm) is presented in this study. The device is theoretically equivalent to a parallel-connection circuit for its special structure and shows multifunction at different voltage bias, which means the output signal can be tailored by an applied voltage. The Se/ZnO PD shows binary response (positive and negative current output under on/off periodical light illumination) under small reverse bias (-0.05 V and -0.1 V) which efficiently reduces the negative effect of noise signal in weak-signal detection applications. At zero bias, with the aid of a p-n heterojunction, a high on/off ratio of nearly 104 is achieved by this device at zero set bias under 370 nm (∼0.85 mW cm−2) illumination and this on/off ratio can be achieved in 0.5 s. The device also shows a fast speed with rise time of 0.69 ms and decay time of 13.5 ms measured by a pulse laser, much faster than that of a pure ZnO film. The Se/ZnO PD in this research provides a new pathway to fabricate multifunctional high-speed, high signal-to-noise ratio, high detectivity and high selectivity UV photodetectors. [ABSTRACT FROM AUTHOR]

Hierarchically porous nitrogen-doped carbon (HPC)/polyaniline (PANI) nanowire arrays nanocomposites are synthesized by a facile in situ polymerization. 3D interconnected honeycomb-like HPC was prepared by a cost-effective route via one-step carbonization using urea and alkali-treated wheat flour as carbon precursor with a high specific surface area (1294 m2 g−1). The specific capacitances of HPC and HPC/PANI (with a surface area of 923 m2 g−1) electrode are 383 and 1080 F g−1 in 1 m H2SO4, respectively. Furthermore, an asymmetric supercapacitor based on HPC/PANI as positive electrode and HPC as negative electrode is successfully assembled with a voltage window of 0-1.8 V in 1 m Na2SO4 aqueous electrolyte, exhibiting high specific capacitance (134 F g−1), high energy density (60.3 Wh kg−1) and power density (18 kW kg−1), and excellent cycling stability (91.6% capacitance retention after 5000 cycles). [ABSTRACT FROM AUTHOR]

Broadband responsivity enhancement of single Se microtube (Se-MT) photodetectors in the UV-visible region is presented in this research. The pristine Se-MT photodetector demonstrates broadband photoresponse from 300 to 700 nm with peak responsivity of ≈19 mA W−1 at 610 nm and fast speed (rise time 0.32 ms and fall time 23.02 ms). To further enhance the responsivity of the single Se-MT photodetector, Au and Pt nanoparticles (NPs) are sputtered on these devices. In contrast to only enhancement of responsivity in UV region by Pt NPs, broadband responsivity enhancement (≈600% to ≈800%) of the Se-MT photodetector is realized from 300 to 700 nm by tuning the size and density of Au NPs. The broadband responsivity enhancement phenomena are interpreted by both the surface modification and surface plasmon coupling. The experimental results of this work provide an additional opportunity for fabricating high-performance UV-visible broadband photodetectors. [ABSTRACT FROM AUTHOR]

In this work, the effects of solvent additives on the trapping and recombination of carriers in polymer solar cells based on the blend of poly(3-hexylthiophene) (P3HT) and indene-C60-bisadduct (ICBA) are investigated by measuring the ideality factor and transient photocurrent. The addition of a few percent of 4-bromoanisole (BrAni) and 1-chloronaphthalene (CN) can give rise to the preferable morphology with well-ordered interpenetrating networks, which is beneficial for charge transport. Efficiency enhancement of polymer solar cells with solvent additives originates from the decreased defects and suppressed trap-assisted recombination at the interface between the donor and acceptor materials. [ABSTRACT FROM AUTHOR]

By depositing polyethylene glycol (PEG) on the PEDOT:PSS anode buffer layer of polymer solar cells, we find that PEG not only penetrates downward into the PEDOT:PSS film and improves the conductivity of the anode buffer layer, but also migrates upward to the active layer/Al interface, and thereby forming a cathode buffer layer. The double-logarithmic plots of the net photocurrent against the effective applied voltage imply that the phase separation of the active layer formed by PEG migration is beneficial to exciton dissociation. When 4% PEG was deposited on PEDOT:PSS layer, the power conversion efficiency of polymer solar cell increases from 2.69 to 3.88%. [ABSTRACT FROM AUTHOR]

ABSTRACT We investigated the reduction in the absorption intensity of poly(3-hexylthiophene) (P3HT) in a poly(3-hexylthiophene)/(6,6)-phenyl-C61-butyric acid methyl ester (P3HT/PCBM) 'bilayer' heterojunction film that was fabricated using orthogonal solvents. The results show that even though P3HT is insoluble in dichloromethane (DCM), DCM could decrease the chain packing and the crystallinity of the P3HT film by the swelling effect. DCM also assists in the penetration of the PCBM into the P3HT underlayer during spin-coating. After the DCM evaporates, the PCBM in the P3HT matrix hinders the self-reorganization of P3HT, causing a drop in the absorption intensity of P3HT. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015, 132, 41757. [ABSTRACT FROM AUTHOR]

Hippo signaling pathway is emerging as a novel target for anticancer therapy because it plays key roles in organ size control and tumorigenesis. As the downstream effectors, Yes-associated protein (YAP)-transcriptional enhancer activation domain family member (TEAD) association is essential for YAP-driven oncogenic activity, while TEAD is largely dispensable for normal tissue growth. We present the design of YAP-like peptides (17mer) to occupy the interface 3 on TEAD. Introducing cysteines at YAP sites 87 and 96 can induce disulfide formation, as confirmed by crystallography. The engineered peptide significantly improves the potency in disrupting YAP-TEAD interaction in vitro. To confirm that blocking YAP-TEAD complex formation by directly targeting on TEAD is a valid approach, we report a significant reduction in tumor growth rate in a hepatocellular carcinoma xenograft model after introducing the dominant-negative mutation (Y406H) of TEAD1 to abolish YAP-TEAD interaction. Our results suggest that targeting TEAD is a promising strategy against YAP- induced oncogenesis. [ABSTRACT FROM AUTHOR]

In this work, the effects of photo-induced defects on polymer solar cells (PSCs) based on the blends of poly (4,8-bis-alkyloxybenzo (1,2-b:4,5-b′) dithiophene-2,6-diyl-alt-(alkyl thieno(3,4-b) thiophene-2-carboxylate)-2,6-diyl) (PBDTTT-C) and [6,6]-phenyl C70-butyric acid methyl ester (PC70BM) are investigated. In addition to conventional PSC characterization approaches, the capacitance-voltage ( C-V) response and the ideality factor are used to analyze the changes in the built-in potential and defect-induced recombination at the internal donor/acceptor interface and the electrode interfaces in illuminated PSCs. The results show that the dominant trap states increase with increasing illumination time, which indicates that photo-induced defects play an important role in the photodegradation of inverted PSCs. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Argonaute (AGO) proteins play a key role in regulation of gene expression through small RNA-directed RNA cleavage and translational repression, and are essential for multiple developmental processes. In the present study, 17 AGO genes of maize ( Zea mays L., ZmAGOs) were identified using a Hidden Markov Model and validated by rapid amplification of cDNA ends assay. Subsequently, quantitative PCR revealed that expressions of these genes were higher in reproductive than in vegetative tissues. AGOs presented five temporal and spatial expression patterns, which were likely modulated by DNA methylation, 5′-untranslated exons and microRNA-mediated feedback loops. Intriguingly, Z mAGO18b was highly expressed in tassels during meiosis. Furthermore, in situ hybridization and immunofluorescence showed that ZmAGO18b was enriched in the tapetum and germ cells in meiotic anthers. We hypothesized that ZmAGOs are highly expressed in reproductive tissues, and that ZmAGO18b is a tapetum and germ cell-specific member of the AGO family in maize. [ABSTRACT FROM AUTHOR]

Maize plant height is closely associated with biomass, lodging resistance and grain yield. Determining the genetic basis of plant height by characterizing and cloning plant height genes will guide the genetic improvement of crops. In this study, a quantitative trait locus ( QTL) for plant height, qPH3.1, was identified on chromosome 3 using populations derived from a cross between Zong3 and its chromosome segment substitution line, SL15. The plant height of the two lines was obviously different, and application of exogenous gibberellin A3 removed this difference. QTL mapping placed qPH3.1 within a 4.0 cM interval, explaining 32.3% of the phenotypic variance. Furthermore, eight homozygous segmental isolines ( SILs) developed from two larger F2 populations further narrowed down qPH3.1 to within a 12.6 kb interval. ZmGA3ox2, an ortholog of OsGA3ox2, which encodes a GA3 β -hydroxylase, was positionally cloned. Association mapping identified two polymorphisms in ZmGA3ox2 that were significantly associated with plant height across two experiments. Quantitative RT - PCR showed that SL15 had higher ZmGA3ox2 expression relative to Zong3. The resultant higher GA1 accumulation led to longer internodes in SL15 because of increased cell lengths. Moreover, a large deletion in the coding region of ZmGA3ox2 is responsible for the dwarf mutant d1-6016. The successfully isolated qPH3.1 enriches our knowledge on the genetic basis of plant height in maize, and provides an opportunity for improvement of plant architecture in maize breeding. [ABSTRACT FROM AUTHOR]

InP quantum dots (QDs), without heavy metals, show great potential for display and lightening applications. However, achieving efficient InP‐based quantum dot light‐emitting diodes (QLEDs) with extended operational lifetime remains challenging due to unbalanced carrier injection within the device. In this study, polyvinyl pyrrolidone (PVP) is introduced as an intermediate layer between the QDs emitting layer (EML) and the ZnMgO electron transport layer (ETL). This intermediate layer is designed to block excess electron injection into the QDs layer and simultaneously reduce leakage current. Additionally, the introduction of PVP can passivate QDs/ETL interface defects and inhibit exciton quenching of QDs by the ZnMgO ETL. The optimized device achieves a peak external quantum efficiency (EQE) of 23.5% and a long T95 operational lifetime of over 800 h at an initial luminance of 1000 cd m−2 for red InP‐based QLEDs emitting at 624 nm. Both the EQE and the T95 operational lifetime represent the highest values achieved for red InP‐based QLEDs to date. [ABSTRACT FROM AUTHOR]

Unlocking the afterglow properties of the fluorescence molecules at room temperature is an urgent challenge. Herein, inks prepared with dimethyl terephthalate (DTT) and carbazole (Cz) analogs with heteroatom (C, S, and O) substituents on the N as host and guest molecules can be directly sprayed onto different substrates to unlock the excitation‐wavelength dependent (Ex‐De) afterglow characteristics of the guest compound. Additionally, with the increase in the number of lone pair electrons, spin‐orbit coupling (SOC) increases, resulting in a longer afterglow duration lasting up to 4.5 s with Φp>27%. Theory calculations and experiments indicate that the afterglow originated from the interactions between the host and guest molecules restricting the non‐radiative transition of the triplet excitons. Different Ex (with watershed at 310 nm) lead to the variation in the conformation of the S0DTT and S1DTT, which in turn affects the strength of host‐guest interactions and contributes to the Ex‐De characteristics. Benefiting from facile preparation, substrate‐independent applicability, and Ex‐De characteristics, the afterglow samples are demonstrated for applications in multilevel information security fields. This work proposes a general strategy for unlocking the afterglow emission of traditional molecules, which is valuable for the discovery of high‐performance afterglow materials in the future. [ABSTRACT FROM AUTHOR]