Search

A review on the recent development of intense laser‐driven terahertz (THz) sources is provided here. The technologies discussed include various types of sources based on optical rectification (OR), spintronic emitters, and laser‐filament‐induced plasma. The emphasis is on OR using pump pulses with tilted intensity front. Illustrative examples of newly emerging applications are briefly discussed, in particular strong‐field THz control of materials and acceleration and manipulation of charged particles. [ABSTRACT FROM AUTHOR]

Optical activity (polarization rotation of light) is one of the most desired features of chiral media, as it is important for many polarization‐related applications. However, in the THz region, chiral media with strong optical activity are not available in nature. Here, a chiral metamaterial (CMM) structure composed of pairs of vertical U‐shape resonators of "twisted" arms is studied, and it is revealed that it demonstrates large pure optical activity (i.e., optical activity associated with negligible transmitted wave ellipticity) in the low THz regime. The experimental data show polarization rotation up to 25° for an unmatched bandwidth of 1 THz (relative bandwidth 80%), from a 130 µm‐thickness structure, while theoretical optimizations show that the rotation can reach 45°. The enhanced chiral response of the structure is analyzed through an equivalent RLC circuit model, which also provides simple optimization rules for the enhancement of its chiral response. The proposed chiral design allows for easy fabrication via direct laser writing (DLW) and electroless metal plating, making the associated structures suitable candidates for polarization control applications. [ABSTRACT FROM AUTHOR]

Laser direct writing is a widely employed technique for 3D, contactless, and fast functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort laser pulses, offering an incomparable degree of control on the produced material modifications. However, challenges remain for devising an equivalent technique in crystalline silicon which is the backbone material of the semiconductor industry. The physical mechanisms inhibiting sufficient energy deposition inside silicon with femtosecond laser pulses are reviewed in this article as well as the strategies established so far for bypassing these limitations. These solutions consisting of employing longer pulses (in the picosecond and nanosecond regime), femtosecond‐pulse trains, and surface‐seeded bulk modifications have allowed addressing numerous applications. [ABSTRACT FROM AUTHOR]

Ultrafast laser welding is a fast, clean, and contactless technique for joining a broad range of materials. Nevertheless, this technique cannot be applied for bonding semiconductors and metals. By investigating the nonlinear propagation of picosecond laser pulses in silicon, it is elucidated how the evolution of filaments during propagation prevents the energy deposition at the semiconductor–metal interface. While the restrictions imposed by nonlinear propagation effects in semiconductors usually inhibit countless applications, the possibility to perform semiconductor–metal ultrafast laser welding is demonstrated. This technique relies on the determination and the precompensation of the nonlinear focal shift for relocating filaments and thus optimizing the energy deposition at the interface between the materials. The resulting welds show remarkable shear joining strengths (up to 2.2 MPa) compatible with applications in microelectronics. Material analyses shed light on the physical mechanisms involved during the interaction. [ABSTRACT FROM AUTHOR]

Ultrafast Laser Welding: Taming Ultrafast Laser Filaments for Optimized Semiconductor-Metal Welding (Laser Photonics Rev. 15(2)/2021) In article number 2000433, Maxime Chambonneau, Qingfeng Li, Stefan Nolte, and co-workers demonstrate semiconductor-metal ultrafast laser welding - an additive manufacturing technique limited to other material families so far. This work offers new insights for the fabrication of microelectronic devices. [Extracted from the article]