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Establishing a reliable control of perpendicular magnetic anisotropy (PMA) is challenging but essential for the full utilization of rare‐earth iron garnets in spintronic devices. In this study, a feasible approach to enhance the PMA of ferrimagnetic thulium iron garnet (TmIG) films is presented. This approach involves precise adjustments in cation stoichiometry and epitaxial strain state. By fine‐tuning the pre‐ablation process and oxygen partial pressure during pulsed laser deposition, a series of high‐quality TmIG films can grow with variable cation stoichiometry, i.e., the Tm/Fe molar ratio. The finding reveals that cation stoichiometry plays a crucial role in determining the magnetic properties of the TmIG films. Particularly, the stoichiometric TmIG film has the strongest PMA due to the maximized magnetostriction coefficient. Combining this stoichiometry optimization and strain engineering, an unprecedented PMA strength of ≈30 kJ m−3 for TmIG is achieved. This achievement demonstrates a simple and effective method for harnessing the magnetic properties of rare‐earth iron garnet films, paving the way for their advanced applications in next‐generation spintronic devices. [ABSTRACT FROM AUTHOR]

2D magnets have recently drawn enormous interest. As an air‐stable A‐type van der Waals antiferromagnet (AFM), CrSBr has attracted great attention but has also led to controversies about its large‐span ordering temperatures. Herein, a systematic study of the magnetic phase transition in single‐crystalline CrSBr with ultrahigh‐quality through surface‐sensitive X‐ray magnetic linear dichroism and X‐ray magnetic circular dichroism measurements combined with vibrating sample magnetometry for characterization of bulk magnetization is reported. The interlayer AFM order of both surface and bulk CrSBr is revealed to maintain a similar Néel temperature within the range of 132–142 K. However, the intralayer ferromagnetic (FM) order of surface CrSBr is found to sustain up to ≈238 K, 70 K higher than the value obtained from the bulk CrSBr, demonstrating a dramatically different surface and bulk Curie temperature in CrSBr. Moreover, a half‐filled t2g electronic state for Cr3+ ions with magnetic moment of ≈3 µB/Cr in CrSBr is clearly identified. These results enrich the understanding of the electronic structure and magnetism in CrSBr, providing this material as a promising building block for future spintronic devices. [ABSTRACT FROM AUTHOR]

The advent of van der Waals (vdW) ferromagnetic (FM) and antiferromagnetic (AFM) materials offers unprecedented opportunities for spintronics and magneto‐optic devices. Combining magnetic Kerr microscopy and density functional theory calculations, the AFM‐FM transition is investigated and a surprising abnormal magneto‐optic anisotropy in vdW CrSBr associated with different magnetic phases (FM, AFM, or paramagnetic state) is discovered. This unique magneto‐optic property leads to different anisotropic optical reflectivity from different magnetic states, permitting direct imaging of the AFM Néel vector orientation and the dynamic process of the AFM‐FM transition within a magnetic field. Using Kerr microscopy, not only the domain nucleation and propagation process is imaged but also the intermediate spin‐flop state in the AFM‐FM transition is identified. The unique magneto‐optic property and clear identification of the dynamics process of the AFM‐FM phase transition in CrSBr demonstrate the promise of vdW magnetic materials for future spintronic technology. [ABSTRACT FROM AUTHOR]

The coevolution of bullying and friendship networks and the moderating effects of classroom bullying popularity norms were examined in a sample of 965 students (52.1% boys) in 22 fourth‐ and fifth‐grade classes. Longitudinal social network analysis showed that children were more likely to bully their friends' victims (bully influence effect) and to be bullied by their friends' bullies (victim influence effect); two children bullying the same child were likely to be friends (bully selection effect), and two victims bullied by the same child were likely to be friends (victim selection effect). Bullying popularity norms served as moderators, and the bully selection effect was significant weaker in the context of low bullying popularity norms. This study adds understanding of bullying as a group process and provides implications for preventing school bullying. [ABSTRACT FROM AUTHOR]

The electronic structure of constituent layers and the spin channel of propagating electrons are critical factors that affect the magnitude and sign of magnetoresistance (MR) in synthetic antiferromagnets (SAFMs), which are important for spintronic applications. However, for all‐oxide‐based SAFMs, where there is strong coupling between multiple degrees of freedom, spin transport becomes more complex and remains elusive. Here, using ultrathin half‐metallic manganite/doped ruthenate SAFMs as a model system, three sign reversals of MR are demonstrated accompanied by the crossover between underlying spin‐dependent transport mechanisms. Electron tunneling produces normal MR in the current‐perpendicular‐to‐plane (CPP) geometry at low temperatures, whereas carrier confinement causes inverse MR in the current‐in‐plane (CIP) geometry. Strikingly, CPP MR can undergo a temperature‐driven sign reversal due to resonant tunneling via localized states in the spacer. Moreover, hydrostatic pressure can modulate the interlayer exchange coupling and induce an asymmetric interfacial response to dramatically facilitate electron tunneling, driving a controllable sign reversal of CIP MR. These results provide new insights into understanding and optimization of MR in all‐oxide‐based SAFMs. [ABSTRACT FROM AUTHOR]

Growth and characterization of metal‐oxide thin films foster successful development of oxide‐material‐integrated thin‐film devices represented by metal‐oxide‐semiconductor field‐effect transistors (MOSFET), drawing enormous technological and scientific interest for several decades. In recent years, functional oxide heterostructures have demonstrated remarkable achievements in modern technologies and provided deeper insights into condensed‐matter physics and materials science owing to their versatile tunability and selective amplification of the functionalities. One of the most critical aspects of their physical properties is the polar perturbation stemming from the ionic framework of an oxide. By engineering and exploiting the structural, electrical, magnetic, and optical characteristics through various routes, numerous perceptive studies have clearly shown how polar perturbations advance functionalities or drive exotic physical phenomena in complex oxide heterostructures. In this review, both intrinsic (engraved by thin‐film heteroepitaxy) and extrinsic (reversibly controllable defect‐mediated disorder and polar adsorbates) elements of polar perturbations, highlighting their abilities for the development of highly tunable functional properties are summarized. Scientifically, the recent approaches of polar perturbations render one to consolidate a prospect of atomic‐level manipulation of polar order in epitaxial oxide thin films. Technologically, this review also offers useful guidelines for rational design to heterogeneously integrated oxide‐based multi‐functional devices with high performances. [ABSTRACT FROM AUTHOR]

Understanding the magnetotransport properties of SrRuO3 thin films and heterostructures is essential for both fundamental research and practical applications. While the anomalous Hall effect has been studied extensively, the longitudinal magnetotransport (i.e. magnetoresistance) is not well understood and requires further investigation. Herein, SrRuO3/SrTiO3(001) epitaxial film is used as a model system to systematically investigate the correlation between magnetoresistance and structure symmetry. As the thickness of the SrRuO3 film increases, a structural symmetry transition from tetragonal to orthorhombic occurs. At the same time, a clear sign reversal of magnetoresistance from negative to positive, accompanied by the appearance of strong anisotropy in magnetoresistance measured along the two perpendicular in‐plane axes, is observed. These findings further suggest that the correlation between structural symmetry and magnetoresistance is mediated by the modulations in magnetic anisotropy. These results clarified the relationships between structure symmetry, magnetoresistance, and magnetic anisotropy, which can pave a feasible way for harnessing the magnetotransport properties of SrRuO3 films and using this material in oxide‐based spintronic devices. [ABSTRACT FROM AUTHOR]

Hafnium‐based binary oxides have attracted considerable attention due to their robust ferroelectricity at the nanoscale and compatibility with silicon‐based electronic technologies. To further promote the potential of Hafnium oxides for practical device applications, it is essential to effectively harness the interplay between structural symmetry, domain configuration, and ferroelectricity. Here, using Hf0.5Zr0.5O2/La0.67Sr0.33MnO3 (HZO/LSMO) heterostructures as a model system, the anisotropic strain‐mediated symmetry engineering and ferroelectricity enhancement are systematically investigated. By growing the heterostructures on (110)‐oriented perovskite substrates, considerable anisotropic strain is imposed on the LSMO bottom electrodes. Such an anisotropically‐strained LSMO layer acts as a structural template and effectively tune the structural symmetry, polar/non‐polar phase ratio, and ferroelectricity of the HZO top layer. Specifically, the anisotropic tensile strain stabilizes the ferroelectric rhombohedral and orthorhombic phases, thus enhancing the remnant polarization (Pr) up to 22 µC cm−2. In contrast, the anisotropic compressive strain facilitates the formation of non‐ferroelectric tetragonal phases, leading to a suppressed Pr down to 8 µC cm−2. These findings provide a guideline for understanding and modulating the intrinsic structure‐ferroelectricity relationship of HZO through anisotropic strain‐mediated symmetry engineering, which may shed light on the development of hafnium‐oxide‐based electronic devices. [ABSTRACT FROM AUTHOR]

The breakdown (BD) of one‐selector‐one‐resistor memory cells incurs increasing crosstalk and power consumption in the cross‐point memory array. In this work, failed bit pruning (FBP) operation of selectors is presented to cope with the side effects due to the BD cells. First, the FBP concept and its requirements on the device parameters is presented. Then the wide existence of FBP operation is demonstrated by investigating five different materials. Among them, the single‐element (Te) selector is highlighted. It not only shows high resistance after the prune operation (>50 MΩ) under a low prune voltage (2 V) but also achieves low threshold voltage (1.3 V) and high thermal stability (430 °C). This work demonstrates a new universal character for selector devices to enable robust high‐density cross‐point memory. [ABSTRACT FROM AUTHOR]

One of the keys to the construction of metal oxide heterostructures is the short characteristic length scale, which requires controlled growth and interface engineering on an atomic level. At present, the growth mode of SrRuO3 (SRO) thin films grown on TiO2‐terminated (001) SrTiO3 (STO) substrates usually transitions from 2D layer‐by‐layer to step‐flow at the first few growth periods, which is not conducive to the construction of superlattices or multilayer films. In this paper, persistent layer‐by‐layer growth of SRO thin films is demonstrated by regulating the growth conditions. As a result, the thickness can be precisely controlled down to a single unit cell (u.c.) and achieve precise regulation of superlattices. Interestingly, the physical properties are well comparable to that of traditional step‐flow mode and the critical thickness (tc) for the dead layer is only 3 u.c. Through constructing SRO/STO superlattices, the SRO layers become more conductive and a quasi‐2D ferromagnetic monolayer film is achieved. The results pave a path toward SRO heterostructure synthesis and properties control at an atomic scale. [ABSTRACT FROM AUTHOR]

The neurokinin‐1 receptor (NK‐1R) antagonists are approved as treatment for chemotherapy‐associated nausea and vomiting in cancer patients. The emerging role of the substance P‐NK‐1R system in oncogenesis raises the possibility of repurposing well‐tolerated NK‐1R antagonists for cancer treatment. This study reports that human colorectal cancer (CRC) patients with high NK‐1R expression have poor survival, and NK‐1R antagonists SR140333 and aprepitant induce apoptotic cell death in CRC cells and inhibit CRC xenograft growth. This cytotoxicity induced by treatment with NK‐1R antagonists is mediated by induction of endoplasmic reticulum (ER) stress. ER stress triggers calcium release, resulting in the suppression of prosurvival extracellular signal‐regulated kinase (ERK)‐c‐Myc signaling. Along with ER calcium release, one ER stress pathway mediated by protein kinase RNA‐like ER kinase (PERK) is specifically activated, leading to increased expression of proapoptotic C/EBP‐homologous protein (CHOP). Moreover, NK‐1R antagonists enhance the efficacy of chemotherapy by increasing the sensitivity and overcoming resistance to 5‐fluorouracil in CRC cells through the induction of sustained ER stress and the consequent suppression of ERK‐c‐Myc signaling both in vitro and in vivo. Collectively, the findings provide novel mechanistic insights into the efficacy of NK‐1R antagonists either as a single agent or in combination with chemotherapy for cancer treatment. [ABSTRACT FROM AUTHOR]

Oxide heterostructures have great potential for spintronics applications due to their well‐defined heterointerfaces and vast functionalities. To integrate such compelling features into practical spintronics devices, effective control of the magnetic switching behavior is key. Here, continuous control of the magnetic coercive field in SrTiO3/SrRuO3 ultrathin heterostructures is achieved by oxygen vacancy (VO) engineering. Pulsed laser deposition of an oxygen‐deficient SrTiO3 capping layer can trigger VO migration into the SrRuO3 layer while avoiding the formation of Ru vacancies. Moreover, by varying the thickness and growth conditions of the SrTiO3 capping layer, the value of the coercive field (HC) in the ferromagnetic SrRuO3 layer can be continuously tuned. The maximum enhancement of HC at 5 K is 3.2 T. Such a wide‐range tunability of HC may originate from a VO‐induced enhancement of perpendicular magnetic anisotropy and domain wall pinning. This study offers effective approaches for controlling physical properties of oxide heterostructures via VO engineering, which may facilitate the development of oxide‐based functional devices. [ABSTRACT FROM AUTHOR]

This article reports refractometric sensing using two optical resonances of different types supported by TiO2 nanopillar arrays on a gold film, which can be exposed to aqueous or organic environments. One lattice resonance, with enhanced electric fields extending into the surrounding environment, can maintain a quality factor Q > 200 when the bulk refractive index of the surrounding environment varies in a large range from 1.33 to 1.58. This lattice resonance exhibits not only sharp transitions of reflected light intensity but also rapid phase changes. The other resonance is of plasmonic nature with electric fields localized on the metal surface. Small changes in the bulk refractive index or the adsorbate layer (thickness and index) can be detected, with sensitivity comparable to that of plasmonic counterparts. The present hybrid metal–dielectric platform is promising for applications requiring dielectric instead of metallic sensing surfaces. [ABSTRACT FROM AUTHOR]

Ferroelectric materials owning a polymorphic nanodomain structure usually exhibit colossal susceptibilities to external mechanical, electrical, and thermal stimuli, thus holding huge potential for relevant applications. Despite the success of traditional strategies by means of complex composition design, alternative simple methods such as strain engineering have been intensively sought to achieve a polymorphic nanodomain state in lead‐free, simple‐composition ferroelectric oxides in recent years. Here, a nanodomain configuration with morphed structural phases is realized in an epitaxial BaTiO3 film grown on a (111)‐oriented SrTiO3 substrate. Using a combination of experimental and theoretical approaches, it is revealed that a threefold rotational symmetry element enforced by the epitaxial constraint along the [111] direction of BaTiO3 introduces considerable instability among intrinsic tetragonal, orthorhombic, and rhombohedral phases. Such phase degeneracy induces ultrafine ferroelectric nanodomains (1–10 nm) with low‐angle domain walls, which exhibit significantly enhanced dielectric and piezoelectric responses compared to the (001)‐oriented BaTiO3 film with uniaxial ferroelectricity. Therefore, the finding highlights the important role of epitaxial symmetry in domain engineering of oxide ferroelectrics and facilitates the development of dielectric capacitors and piezoelectric devices. [ABSTRACT FROM AUTHOR]

Side match vector quantisation (SMVQ) technique has been widely used in a lot of image compression and data hiding applications. It can effectively decrease the bit rate (BR) but the encoding visual quality of the image using SMVQ is generally poor because the correlation among neighbouring image blocks is still low. In this study, the authors propose a new enhanced SMVQ (ESMVQ) by introducing the concept of complementary state codebook (CSC) to improve the visual quality of SMVQ. Encoding input vectors by using CSC, ESMVQ can achieve almost the same encoding visual quality as using the conventional vector quantisation. As a result, the encoding visual quality of image can be significantly improved by exploiting the power of CSC. Experimental results show that the improvement of proposed ESMVQ method over SMVQ is up to 4.677 dB at a similar BR for image Lena when the main codebook size is 1024. [ABSTRACT FROM AUTHOR]