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Herein, the influence of shot peening (SP) on the microstructure and mechanical properties of 3D printed 316L stainless steel is studied by optical microscopy (OM), electron backscattered diffraction (EBSD), and mechanical properties testing. The changes in microstructure and mechanical properties of 316L stainless steel by 3D printing under different SP strengths are explored, which are drawn as follows: 1) the microstructure of 3D‐printed 316L stainless steel is greatly refined, and the thickness of ultrafine microstructure in the surface layer increases from 0 to 112.5 μm with the increase in peening strengths from 0 to 0.4 MPa; 2) with the increase of peening strengths from 0 to 0.4 MPa, the hardness increases from 236 to 518 HV, and yield strength increases from 547.3 to 740.7 MPa; and 3) based on the EBSD results, the enhanced hardness and yield strength are caused by refinement hardening and dislocation hardening for the SP samples. In addition, it should be noted that the SP decreases the elongation of 3D‐printed 316L stainless steel up to 9%, and makes the ultimate tensile strength reach the maximum value of 871.2 MPa at 0.2 MPa SP strength. [ABSTRACT FROM AUTHOR]

In this paper, high-photosensitive CdS1- xSe x films are synthesized by a two-step technique, which includes the chemical bath deposition of CdS films and a following selenization process. The structural, optical, and photoelectric properties of the CdS1- xSe x films were investigated. With the substitution of selenium for sulfur atoms, grain sizes of the as-prepared CdS1- xSe x films are effectively enlarged and reach the scales of the films thickness when the selenization temperature exceeds 450 °C. With increasing the selenization temperature from 350 to 550 °C, the band gaps of CdS1- xSe x films gradually decrease from 2.37 to 1.82 eV. Under the co-action of the grain-size enlargement and band-gap decrease, the CdS1- xSe x films fabricated at 450 °C show very pronounced photosensitivity. Noteworthy, the ratio of photo to dark conductivity of the CdS1- xSe x film selenized at 450 °C reaches 1.1 × 105, suggesting a promising application potential in the photoelectric devices. [ABSTRACT FROM AUTHOR]