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The directed self-assembly of electronic circuits using functional metallic inks has attracted intensive attention because of its high compatibility with extensive applications ranging from soft printed circuits to wearable devices. However, the typical resolution of conventional self-assembly technologies is not sufficient for practical applications in the rapidly evolving additively manufactured electronics (AMEs) market. Herein, an ultrahigh-resolution self-assembly strategy is reported based on a dual-surface-architectonics (DSA) process. Inspired by the Tokay gecko, the approach is to endow submicrometer-scale surface regions with strong adhesion force toward metallic inks via a series of photoirradiation and chemical polarization treatments. The prepared DSA surface enables the directed self-assembly of electronic circuits with unprecedented 600 nm resolution, suppresses the coffee-ring effect, and results in a reliable conductivity of 14.1 ± 0.6 µΩ cm. Furthermore, the DSA process enables the layer-by-layer fabrication of fully printed organic thin-film transistors with a short channel length of 1 µm, which results in a large on-off ratio of 10 6 and a high field-effect mobility of 0.5 cm 2  V -1  s -1 ., (© 2021 Wiley-VCH GmbH.)

On page 6568, T. Minari and co-workers describe spontaneous patterning based on the parallel vacuum ultraviolet (PVUV) technique, enabling the homogeneous integration of complex, high-resolution electronic circuits, even on large-scale, flexible, transparent substrates. Irradiation of PVUV to the hydrophobic polymer surface precisely renders the selected surface into highly wettable regions with sharply defined boundaries, which spontaneously guides a metal nanoparticle ink into a series of circuit lines and gaps with the widths down to a resolution of 1 μm., (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

A spontaneous patterning technique via parallel vacuum ultraviolet is developed for fabricating large-scale, complex electronic circuits with 1 μm resolution. The prepared organic thin-film transistors exhibit a low contact resistance of 1.5 kΩ cm, and high mobilities of 0.3 and 1.5 cm(2) V(-1) s(-1) in the devices with channel lengths of 1 and 5 μm, respectively., (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

High-quality CdS and Cu(7)S(4) quantum dots (QDs) were synthesized with N,N-dibutylthiourea (DBTU) as an organic sulfur source. In this method, nucleation and growth reactions were controlled simply by the heating rate of the reaction. The mild oxidation conditions gave monodisperse CdS QDs exhibiting pure band-edge emission with relatively high photoluminescence quantum yield. During the synthesis of Cu(7)S(4) QDs, the addition of dodecanethiol to the reaction system controlled the reaction rate to give monodisperse spherical or disk-shaped QDs. A hundred-gram scale of copper precursor could be used to generate the high-quality Cu(7)S(4) QDs, indicating that an industrial-scale reaction is achievable with our method. As observed in anisotropic noble-metal nanocrystals, larger disk-shaped Cu(7)S(4) QDs showed lower localized-surface-plasmon resonance energy in the near-infrared region. The disk-shaped Cu(7)S(4) QDs could be used effectively as templates to form cation-exchanged monodisperse disk-shaped CdS QDs., (Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

An enhancing factor: the enhancement of the electric properties of a dye molecule (IR26) by indium-tin oxide nanoparticles (ITO NPs, see picture) has been shown by measuring the near-infrared two-photon-excited transient absorption spectra. The dye molecule was excited much more efficiently in the presence of an ITO NP layer., (Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Core-shell-structured nanoparticles, consisting of a noble metal or metal oxide core and a chromia (Cr(2)O(3)) shell, were studied as promoters for photocatalytic water splitting under visible light. Core nanoparticles were loaded by impregnation, adsorption or photodeposition onto a solid solution of gallium nitride and zinc oxide (abbreviated GaN:ZnO), which is a particulate semiconductor photocatalyst with a band gap of approximately 2.7 eV, and a Cr(2)O(3) shell was formed by photodeposition using a K(2)CrO(4) precursor. Photodeposition of Cr(2)O(3) on GaN:ZnO modified with a noble metal (Rh, Pd and Pt) or metal oxide (NiO(x), RuO(2) and Rh(2)O(3)) co-catalyst resulted in enhanced photocatalytic activity for overall water splitting under visible light (lambda>400 nm). This enhancement in activity was primarily due to the suppression of undesirable reverse reactions (H(2)-O(2) recombination and/or O(2) photoreduction) and/or protection of the core component from chemical corrosion, depending on the core type. Among the core materials examined, Rh species exhibited relatively high performance for this application. The activity for visible-light water splitting on GaN:ZnO modified with an Rh/Cr(2)O(3) core-shell configuration was dependent on both the dispersion of Rh nanoparticles and the valence state. In addition, the morphology of the Cr(2)O(3) photodeposits was significantly affected by the valence state of Rh and the pH at which the photoreduction of K(2)CrO(4) was conducted. When a sufficient amount of K(2)CrO(4) was used as the precursor and the solution pH ranged from 3 to 7.5, Cr(2)O(3) was successfully formed with a constant shell thickness (approximately 2 nm) on metallic Rh nanoparticles, which resulted in an effective promoter for overall water splitting.