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We report the application of graphene oxide (GO) as the active layer of memory devices. The indium-tin-oxide/GO/Al devices present the ternary write-once-read-many times resistive switching memory, and retain the data information for 3 × 1 0 5 s. In the OFF states, the I – V characteristics in the applied voltage dominantly followed the space-charge-limited-current behaviors. The intermediate resistance state was attributed to the thermionic emission mechanism. In the ON state, the curve in the applied voltage range was related to an Ohmic mechanism. The sandwich structure, ITO/GO/Al resistive switching device, was fabricated. The as-fabricated devices exhibit nonvolatile ternary WORM features memory with retention performance of 3 × 1 0 5 s. The ternary WORM memory of ITO/GO/Al devices open up the door to the possibility of ultrahigh density data storage of high performance nonvolatile memory devices at low cost. [ABSTRACT FROM AUTHOR]