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In this work, a new model has been developed for calculating the effect of a quantizing magnetic field on the temperature dependence of the two-dimensional combined density of states in direct-gap heterostructures with quantum wells. The temperature dependence of the oscillations of the two-dimensional combined density of states of the quantum well is explained by the thermal smearing of the Gaussian distribution function in a strong magnetic field. Based on the proposed new models, the Landau levels of charge carriers in a direct-gap quantum well are determined in a wide temperature range. The experimental results were interpreted using the oscillations of the combined density of states of the quantum well in a quantizing magnetic field. [ABSTRACT FROM AUTHOR]

The calculation of the coefficients of magneto-optical absorption in semiconductors at different temperatures and pressures is carried out. A formula for the temperature dependence of the oscillations of the combined density of states by the Kane dispersion law is obtained. Mathematical modeling has been carried out that determines the magneto-optical absorption coefficient in semiconductors in the presence of external influences. A new method for determining the magneto-optical absorption coefficient in semiconductors in the presence of pressure and temperature is proposed. The correspondence of simulation results with experimental data is shown. [ABSTRACT FROM AUTHOR]