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This paper explores the role of spatial extension of impurity (SEI) on two nonlinear optical (NLO) properties and two other related properties of impurity doped GaAs quantum dot (QD). The NLO properties include the electro-optic effect (EOE) and the third-order nonlinear optical susceptibility (TONOS) whereas the other two related properties being total optical dielectric function (TODF) and the intraband transition lifetime (ITL). The study also involves Gaussian white noise (GWN) which has been introduced to the doped QD through additive and multiplicative pathways. The investigation unveils the subtle interplay between GWN and SEI which ultimately fine-tunes the said NLO properties. TODF, EOE and TONOS manifest red-shift with enhancement of SEI both with and without GWN. The ITL, on the other hand, exhibits monotonic growth with increase in SEI under all conditions. Moreover, the application of GWN causes noticeable quenching of the NLO properties. And the quenching becomes more stringent in presence of multiplicative noise than its additive counterpart. [ABSTRACT FROM AUTHOR]

This work examines the role of spatial impurity extension (SIE) on a few nonlinear optical (NLO) properties of impurity-doped GaAs quantum dot (QD). The NLO properties considered are the nonlinear optical rectification (NOR), the second harmonic generation (SHG) and the third harmonic generation (THG). The study also includes 1 (GWN) which has been incorporated into the doped QD through additive and multiplicative pathways. The study uncovers the delicate interplay between GWN and SIE which ultimately fabricates the said NLO properties. NOR, SHG and THG manifest red-shift with enhancement of SIE both with and without GWN. The study also shows possibilities of attaining maximum NLO response by prudently applying GWN in a particular pathway. Depending upon the particular NLO property concerned, the presence of noise and its mode of application can either deplete or amplify it to different extents with respect to the noise-free situation. [ABSTRACT FROM AUTHOR]