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In this paper, an analytical model for a vertical double implanted metal-oxide semiconductor (DIMOS) transistor structure in 4H-Silicon Carbide (SIC) is presented. Simulation for transport characteristics of the SiC MOSFET with the exact device geometry is carried out using the commercial device simulator MEDICI. A rigorous experimental testing and characterization is done on a 4H-SiC DIMOS transistor test device. SPICE parameters are extracted from the measurements, and a SPICE model for the DIMOS transistor has been developed. The presented work is a part of team efforts of material, device, and power electronics researchers at the University of Tennessee and. Oak Ridge National Laboratory. [ABSTRACT FROM AUTHOR]

The emergence of silicon carbide- (SIC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvements in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SiC devices in power conversion systems. In this study, findings of SiC research at Oak Ridge National Laboratory (ORNL) including SiC device design and system modeling studies, will be given. [ABSTRACT FROM AUTHOR]