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By 532 nm laser pumped PL spectral and Xe pumped fluorescence spectral, characterized InGaAsP/In[sub 0.5](Ga[sub x]Al[sub 1-x])[sub 0.5]P quantum well on substrates 2°, 15° tilted to (110) the optical property dependence of substrates tilt. The PL wavelength varies from 755 nm of the quantum well on substrate of 2° to the 780 nm of the quantum well on substrate of 15°. From fluorescence excitation spectral to excite about 760 nm wavelength of quantum well, the absorption light peak wavelength is 508 nm in common, and has another absorption peak wavelength of 622 nm. Excited by 508 nm and 622 nm wavelength, the fluorescence spectral intensity of the 15° quantum well is about 300 and 10[sup 4] accordingly. Lifetime of charge recombination is about 1.26 ns for this material. [ABSTRACT FROM AUTHOR]