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1. Aluminum oxide tunnel barriers for single electron memory devices

Author

Yadavalli, Kameshwar K., Orlov, Alexei O., Snider, Gregory L., and Elam, Jeffrey

Subjects
*ALUMINUM oxide, *ELECTRONS, *OXIDATION, *LIGHT metals
Abstract

Abstract: We report measurements on single electron memory devices where the memory island, a floating gate, is charged through aluminum oxide tunnel barriers, fabricated through plasma oxidation of aluminum and atomic layer deposition (ALD) of aluminum oxide. These devices are characterized at 300mK and show a definite threshold for tunneling through the oxide barriers indicating a potential for nonvolatile memory. [Copyright &y& Elsevier]

Published
2005
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