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The invention of the laser unleashed the potential of optical metrology, leading to numerous advancements in modern science and technology. This reliance on lasers, however, also sets a bottleneck for precision optical metrology which is complicated by sophisticated photonic infrastructure required for delicate laser-wave control, leading to limited metrology performance and significant system complexity. Here we make a key step towards resolving this challenge, by demonstrating a Pockels laser with multi-functional capability that advances the optical metrology to a new level. The chip-scale laser exhibits a narrow intrinsic linewidth down to 167 Hz and a broad mode-hop-free tuning range up to 24 GHz. In particular, it offers an unprecedented frequency chirping rate up to 20 EHz/s, and an enormous modulation bandwidth >10 GHz, both orders of magnitude larger than any existing lasers. With this laser, we are able to successfully achieve velocimetry of 40 m/s at a short distance of 0.4 m, with a measurable velocity up to the first cosmic velocity at 1 m away, that is inaccessible by conventional ranging approaches, and distance metrology with a ranging resolution of <2 cm. Moreover, for the first time to the best of our knowledge, we are able to realize a dramatically simplified architecture for laser frequency stabilization, by direct locking the laser to an external reference gas cell without any extra external light control. We successfully achieve a long-term laser stability with a frequency fluctuation of only $\pm$ 6.5 MHz over 60 minutes. The demonstrated Pockels laser combines elegantly high laser coherence with ultrafast frequency reconfigurability and superior multifunctional capability that we envision to have profound impacts on many areas including communication, sensing, autonomous driving, quantum information processing, and beyond., Comment: 10 pages, 4 figures

Compact photonic systems that offer high frequency stability and low noise are of increasing importance to applications in precision metrology, quantum computing, communication, and advanced sensing technologies. However, on-chip resonators comprised of dielectrics cannot match the frequency stability and noise characteristics of Fabry-Perot cavities, whose electromagnetic modes live almost entirely in vacuum. In this study, we present a novel strategy to interface micro-fabricated Fabry-Perot cavities with photonic integrated circuits to realize compact, high-performance integrated systems. Using this new integration approach, we demonstrate self-injection locking of an on-chip laser to a milimeter-scale vacuum-gap Fabry-Perot using a circuit interface that transforms the reflected cavity response to enable efficient feedback to the laser. This system achieves a phase noise of -97 dBc/Hz at 10 kHz offset frequency, a fractional frequency stability of 5*10-13 at 10 ms, a 150 Hz 1/pi integral linewidth, and a 35 mHz fundamental linewidth. We also present a complementary integration strategy that utilizes a vertical emission grating coupler and a back-reflection cancellation circuit to realize a fully co-integrated module that effectively redirects the reflected signals and isolates back-reflections with a 10 dB suppression ratio, readily adaptable for on-chip PDH locking. Together, these demonstrations significantly enhance the precision and functionality of RF photonic systems, paving the way for continued advancements in photonic applications.

We explore how III-V semiconductor microring resonators can efficiently generate photon pairs and squeezed vacuum states via spontaneous parametric down-conversion by utilizing their built-in quasi phase matching and modal dispersion. We present an analytic expression for the biphoton wave function of photon pairs generated by weak pump pulses, and characterize the squeezed states that result under stronger pumping conditions. Our model includes loss, and captures the statistics of the scattered photons. A detailed sample calculation shows that for low pump powers conversion efficiencies of 10$^{-5}$, corresponding to a rate of 39 MHz for a pump power of 1 $\mu$W, are attainable for rudimentary structures such as a simple microring coupled to a waveguide, in both the continuous wave and pulsed excitation regimes. Our results suggest that high levels of squeezing and pump depletion are attainable, possibly leading to the deterministic generation of non-Gaussian states, Comment: 17 pages, 9 figures

Swept laser interferometry is an extremely powerful solution embedded in several recent technologies such as absolute distance measurement, light detection and ranging, optical frequency domain reflectometry, optical coherence tomography, microresonator characterization, and gas spectroscopy. Nonlinearity in the optical frequency sweeping of tunable lasers is a fatal drawback in gaining the expected outcome from these technologies. Here, we introduce an onchip, millimeter scale, 7 m spiral resonator that is made of ultralow loss silicon nitride to act as a frequency ruler for correction of the tunable lasers sweeping nonlinearities. The sharp 2 MHz frequency lines of the 85 M high-quality resonator and the narrow spaced 25.57 MHz frequency ticks of the 7 m spiral allow unprecedented precise nonlinearity correction on an integrated photonics platform. Accurate measurements of the rulers frequency spacing, linewidth, and temperature and wavelength sensitivities of the frequency ticks are performed here to demonstrate the quality of the frequency ruler. In addition, the spiral resonator is implemented in an FMCW LiDAR experiment to demonstrate a potential application of the proposed onchip frequency ruler., Comment: 12 pages

In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost. Here, we demonstrate an integrated continuously tunable laser in a heterogeneous gallium arsenide-on-silicon nitride (GaAs-on-SiN) platform that emits in the far-red radiation spectrum near 780 nm, with 20 nm tuning range, <6 kHz intrinsic linewidth, and a >40 dB side-mode suppression ratio. The GaAs optical gain regions are heterogeneously integrated with low-loss SiN waveguides. The narrow linewidth lasing is achieved with an extended cavity consisting of a resonator-based Vernier mirror and a phase shifter. Utilizing synchronous tuning of the integrated heaters, we show mode-hop-free wavelength tuning over a range larger than 100 GHz (200 pm). To demonstrate the potential of the device, we investigate two illustrative applications: (i) the linear characterization of a silicon nitride microresonator designed for entangled-photon pair generation, and (ii) the absorption spectroscopy and locking to the D1 and D2 transition lines of 87-Rb. The performance of the proposed integrated laser holds promise for a broader spectrum of both classical and quantum applications in the visible range, encompassing communication, control, sensing, and computing.

Correlated photon-pair sources are key components for quantum computing, networking, and sensing applications. Integrated photonics has enabled chip-scale sources using nonlinear processes, producing high-rate entanglement with sub-100 microwatt power at telecom wavelengths. Many quantum systems operate in the visible or near-infrared ranges, necessitating broadband visible-telecom entangled-pair sources for connecting remote systems via entanglement swapping and teleportation. This study evaluates broadband entanglement generation through spontaneous four-wave mixing in various nonlinear integrated photonic materials, including silicon nitride, lithium niobate, aluminum gallium arsenide, indium gallium phosphide, and gallium nitride. We demonstrate how geometric dispersion engineering facilitates phase-matching for each platform and reveals unexpected results, such as robust designs to fabrication variations and a Type-1 cross-polarized phase-matching condition for III-V materials that expands the operational bandwidth. With experimentally attainable parameters, integrated photonic microresonators with optimized designs can achieve pair generation rates greater than ~1 THz/mW$^2$.

The development of manufacturable and scalable integrated nonlinear photonic materials is driving key technologies in diverse areas such as high-speed communications, signal processing, sensing, and quantum information. Here, we demonstrate a novel nonlinear platform -- InGaP-on-insulator -- optimized for visible-to-telecommunication wavelength $\chi^{\left(2\right)}$ nonlinear optical processes. In this work, we detail our 100-mm wafer-scale InGaP-on-insulator fabrication process realized via wafer bonding, optical lithography, and dry-etching techniques. The resulting wafers yield 1000s of components in each fabrication cycle, with initial designs that include chip-to-fiber couplers, 12.5-cm-long nested spiral waveguides, and arrays of microring resonators with free-spectral ranges spanning 400-900 GHz. We demonstrate intrinsic resonator quality factors as high as 324,000 (440,000) for single-resonance (split-resonance) modes near 1550 nm corresponding to 1.56 dB cm$^{-1}$ (1.22 dB cm$^{-1}$) propagation loss. We analyze the loss versus waveguide width and resonator radius to establish the operating regime for optimal 775-to-1550 nm phase matching. By combining the high $\chi^{\left(2\right)}$ and $\chi^{\left(3\right)}$ optical nonlinearity of InGaP with wafer-scale fabrication and low propagation loss, these results open promising possibilities for entangled-photon, multi-photon, and squeezed light generation.

High-performance, high-volume-manufacturing Si3N4 photonics requires extremely low waveguide losses augmented with heterogeneously integrated lasers for applications beyond traditional markets of high-capacity interconnects. State-of-the-art quality factors (Q) over 200 million at 1550 nm have been shown previously; however, maintaining high Qs throughout laser fabrication has not been shown. Here, Si3N4 resonator intrinsic Qs over 100 million are demonstrated on a fully integrated heterogeneous laser platform. Qi is measured throughout laser processing steps, showing degradation down to 50 million from dry etching, metal evaporation, and ion implant steps, and controllable recovery to over 100 million from annealing at 250C - 350C.

Next-generation communications, radar and navigation systems will extend and exploit the higher bandwidth of the millimeter-wave domain for increased communication data rates as well as radar with higher sensitivity and increased spatial resolution. However, realizing these advantages will require the generation of millimeter-wave signals with low phase noise in simple and compact form-factors. The rapidly developing field of photonic integration addresses this challenge and provides a path toward simplified and portable, low-noise mm-wave generation for these applications. We leverage these advances by heterodyning two silicon photonic chip lasers, phase-locked to the same miniature Fabry-Perot (F-P) cavity to demonstrate a simple framework for generating low-noise millimeter-waves with phase noise below the thermal limit of the F-P cavity. Specifically, we generate 94.5 GHz and 118.1 GHz millimeter-wave signals with phase noise of -117 dBc/Hz at 10 kHz offset, decreasing to -120 dBc/Hz at 40 kHz offset, a record low value for such photonic devices. We achieve this with existing technologies that can be integrated into a platform less than $\approx$ 10 mL in volume. Our work illustrates the significant potential and advantages of low size, weight, and power (SWaP) photonic-sourced mm-waves for communications and sensing., Comment: 5 pages, 4 figures

Rapid progress in photonics has led to an explosion of integrated devices that promise to deliver the same performance as table-top technology at the nanoscale; heralding the next generation of optical communications, sensing and metrology, and quantum technologies. However, the challenge of co-integrating the multiple components of high-performance laser systems has left application of these nanoscale devices thwarted by bulky laser sources that are orders of magnitude larger than the devices themselves. Here we show that the two main ingredients for high-performance lasers -- noise reduction and isolation -- currently requiring serial combination of incompatible technologies, can be sourced simultaneously from a single, passive, CMOS-compatible nanophotonic device. To do this, we take advantage of both the long photon lifetime and the nonreciprocal Kerr nonlinearity of a high quality factor silicon nitride ring resonator to self-injection lock a semiconductor laser chip while also providing isolation. Additionally, we identify a previously unappreciated power regime limitation of current on-chip laser architectures which our system overcomes. Using our device, which we term a unified laser stabilizer, we demonstrate an on-chip integrated laser system with built-in isolation and noise reduction that operates with turnkey reliability. This approach departs from efforts to directly miniaturize and integrate traditional laser system components and serves to bridge the gap to fully integrated optical technologies.

The remarkable frequency stability of resonant systems in the optical domain (optical cavities and atomic transitions) can be harnessed at frequency scales accessible by electronics using optical frequency division. This capability is revolutionizing technologies spanning time keeping to high-performance electrical signal sources. A version of the technique called 2-point optical frequency division (2P-OFD) is proving advantageous for application to high-performance signal sources. In 2P-OFD, an optical cavity anchors two spectral endpoints defined by lines of a frequency comb. The comb need not be self-referenced, which greatly simplifies the system architecture and reduces power requirements. Here, a 2P-OFD microwave signal source is demonstrated with record-low phase noise using a microcomb. Key to this advance is a spectral endpoint defined by a frequency agile single-mode dispersive wave that is emitted by the microcomb soliton. Moreover, the system frequency reference is a compact all-solid-state optical cavity with a record Q-factor. The results advance integrable microcomb-based signal sources into the performance realm of much larger microwave sources.

Ultra-low-noise laser sources are crucial for a variety of applications, including microwave synthesizers, optical gyroscopes, and the manipulation of quantum systems. Silicon photonics has emerged as a promising solution for high-coherence applications due to its ability to reduce system size, weight, power consumption, and cost (SWaP-C). Semiconductor lasers based on self-injection locking (SIL) have reached fiber laser coherence, but typically require a high-Q external cavity to suppress coherence collapse through frequency-selective feedback. Lasers based on external-cavity locking (ECL) are a low-cost and turnkey operation option, but their coherence is generally inferior to SIL lasers. In this work, we demonstrate quantum-dot (QD) lasers grown directly on Si that achieve SIL laser coherence under turnkey ECL. The high-performance QD laser offers a scalable and low-cost heteroepitaxial integration platform. Moreover, the QD laser's chaos-free nature enables a 16 Hz Lorentzian linewidth under ECL using a low-Q external cavity, and improves the frequency noise by an additional order of magnitude compared to conventional quantum-well lasers.

Coherent optics has profoundly impacted diverse applications ranging from communications, LiDAR to quantum computations. However, building coherent systems in integrated photonics previously came at great expense in hardware integration and energy efficiency: the lack of a power-efficient way to generate highly coherent light necessitates bulky lasers and amplifiers, while frequency and phase recovery schemes require huge digital signal processing resources. In this work, we demonstrate a high-coherence parallelization strategy that facilitates advanced integrated coherent systems at a minimum price. Using a self-injection locked microcomb to injection lock a distributed feedback laser array, we boost the microcomb power by a record high gain of up to 60 dB on chip with no degradation in coherence. This strategy enables tens of highly coherent channels with an intrinsic linewidth down to the 10 Hz level and power of more than 20 dBm. The overall electrical to optical wall-plug efficiency reaches 19%, comparable with that of the state-of-the-art semiconductor lasers. Driven by this parallel source, we demonstrate a silicon photonic communication link with an unprecedented data rate beyond 60 Tbit/s. Importantly, the high coherence we achieve reduces the coherent-related DSP consumption by 99.999% compared with the traditional III-V laser pump scheme. This work paves a way to realizing scalable, high-performance coherent integrated photonic systems, potentially benefiting numerous applications.

Using an aluminum gallium arsenide microring resonator, we demonstrate a bright quantum optical microcomb with $>300$ nm bandwidth and more than 20 sets of time-energy entangled modes, enabling spectral demultiplexing with simple, off-the-shelf commercial telecom components. We report high-rate continuous entanglement distribution for two sets of entangled-photon pair frequency modes exhibiting up to $20$ GHz/mW$^2$ pair generation rate. As an illustrative example of entanglement distribution, we perform a continuous-wave time-bin quantum key distribution protocol with 8 kbps raw key rates while maintaining less than 10$\%$ error rate and sufficient two-photon visibility to ensure security of the channel. When the $>$20 frequency modes are multiplexed, we estimate $>$100 kbps entanglement-based key rates or the creation of a multi-user quantum communications network. The entire system requires less than 110 $\mu$W of on-chip optical power, demonstrating an efficient source of entangled frequency modes for quantum communications. As a proof of principle, a quantum key is distributed across 12 km of deployed fiber on the UCSB campus and used to transmit a 21 kB image with $<9\%$ error., Comment: 14 pages, 8 figures

The unique benefits of Fabry-P\'erot resonators as frequency-stable reference cavities and as an efficient interface between atoms and photons make them an indispensable resource for emerging photonic technologies. To bring these performance benefits to next-generation communications, computation, and timekeeping systems, it will be necessary to develop strategies to integrate compact Fabry-P\'erot resonators with photonic integrated circuits. In this paper, we demonstrate a novel reflection cancellation circuit that utilizes a numerically optimized multi-port polarization-splitting grating coupler to efficiently interface high-finesse Fabry-P\'erot resonators with a silicon photonic circuit. This circuit interface produces spatial separation of the incident and reflected waves, as required for on-chip Pound-Drever-Hall frequency locking, while also suppressing unwanted back reflections from the Fabry-P\'erot resonator. Using inverse design principles, we design and fabricate a polarization-splitting grating coupler that achieves 55% coupling efficiency. This design realizes an insertion loss of 5.8 dB for the circuit interface and more than 9 dB of back reflection suppression, and we demonstrate the versatility of this system by using it to interface several reflective off-chip devices.

This paper investigates experimentally and numerically the nonlinear dynamics of an epitaxial quantum dot laser on silicon subjected to optoelectronic feedback. Experimental results showcase a diverse range of dynamics, encompassing square wave patterns, quasi-chaotic states, and mixed waveforms exhibiting fast and slow oscillations. These measurements unequivocally demonstrate that quantum dot lasers on silicon readily and stably generate a more extensive repertoire of nonlinear dynamics compared to quantum well lasers. This pronounced sensitivity of quantum dot lasers to optoelectronic feedback represents a notable departure from their inherent insensitivity to optical feedback arising from reflections. Moreover, based on the Ikeda-like model, our simulations illustrate that the inherent characteristics of quantum dot lasers on silicon enable rapid and diverse dynamic transformations in response to optoelectronic feedback. The emergence of these exotic dynamics paves the way for further applications like integrated optical clocks, optical logic, and optical computing.

Numerous modern technologies are reliant on the low-phase noise and exquisite timing stability of microwave signals. Substantial progress has been made in the field of microwave photonics, whereby low noise microwave signals are generated by the down-conversion of ultra-stable optical references using a frequency comb. Such systems, however, are constructed with bulk or fiber optics and are difficult to further reduce in size and power consumption. Our work addresses this challenge by leveraging advances in integrated photonics to demonstrate low-noise microwave generation via two-point optical frequency division. Narrow linewidth self-injection locked integrated lasers are stabilized to a miniature Fabry-P\'{e}rot cavity, and the frequency gap between the lasers is divided with an efficient dark-soliton frequency comb. The stabilized output of the microcomb is photodetected to produce a microwave signal at 20 GHz with phase noise of -96 dBc/Hz at 100 Hz offset frequency that decreases to -135 dBc/Hz at 10 kHz offset--values which are unprecedented for an integrated photonic system. All photonic components can be heterogeneously integrated on a single chip, providing a significant advance for the application of photonics to high-precision navigation, communication and timing systems.