290 results on '"Cai, Shujun"'
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2. Application of quality control circle activities for implementation of Traditional Chinese Medicine nursing for ICU patients (提高ICU患者中医护理操作实施率的品管圈实践)
3. Lysosome damage triggers acute formation of ER to lysosomes membrane tethers mediated by the bridge-like lipid transport protein VPS13C
4. A compact 47–52‐GHz power amplifier MMIC with output power of 20 W.
5. Improved fabrication of fully-recessed normally-off SiN/SiO2/GaN MISFET based on the self-terminated gate recess etching technique
6. High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate
7. High performance AlGaN/GaN pressure sensor with a Wheatstone bridge circuit
8. Fast growth of single-crystal graphene on Cu[sbnd]Ni substrate by surface oxygen supply
9. A L-Band 1003-W AlGaN/GaN HEMT Power Amplifier for Operation at 100V Bias
10. Direct-readout pressure sensor based on AlGaN/GaN heterostructure
11. Membrane remodeling properties of the Parkinson’s disease protein LRRK2
12. Cryo-ET reveals the macromolecular reorganization of S. pombe mitotic chromosomes in vivo
13. Threshold voltage modulation mechanism of high-performance normally-off AlGaN/GaN gates-separating groove HFET
14. Nanoscale analysis of human G1 and metaphase chromatin in situ
15. Heterogeneous non-canonical nucleosomes predominate in yeast cells in situ
16. Superior Performance $\beta$-Ga$_\text{2}$O$_{\text{3}}$ Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier
17. Simulation study of GaN-based HFETs with graded AlGaN barrier
18. Trap behaviors in AlGaN/GaN based polarization-doped field effect transistors by frequency-dependent conductance–voltage characterizations
19. Membrane remodeling properties of the Parkinson’s disease protein LRRK2
20. Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs
21. High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications
22. In situ architecture of the lipid transport protein VPS13C at ER–lysosome membrane contacts
23. Subtomogram averaging and classification v1
24. Cell culture and transfection v1
25. Structural prediction of VPS13C with AlphaFold2 v1
26. Determine inter-membrane spacing v1
27. Cell culture on EM grids and fluorescence microscopy imaging v1
28. Cryo Focused Ion Beam milling v1
29. Tilt series collection and reconstruction for cryo-electron tomography v1
30. Plunge freezing v1
31. Cryo-ET detects bundled triple helices but not ladders in meiotic budding yeast
32. 2.41 kV Vertical P-Nio/n-Ga2O3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm2
33. Fabrication and characterization of 4H-SiC APDs for high-temperature ultraviolet detection applications
34. Two-Stage Ku-Band Graphene Low Noise Amplifier MMIC With Improved Fabrication Process
35. GaN-Based Frequency Doubler With Pulsed Output Power Over 1 W at 216 GHz
36. High-Power 300 GHz Solid-State Source Chain Based on GaN Doublers
37. S-band SiC MESFET on high duty cycle
38. Author Reply to Peer Reviews of Meiotic budding yeast assemble bundled triple helices but not ladders
39. Polycrystalline diamond MESFETs by Au-mask technology for RF applications
40. Contaminant-Free Wafer-Scale Assembled h-BN/Graphene van der Waals Heterostructures for Graphene Field-Effect Transistors
41. Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities
42. Superior Performance β-Ga2O3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier
43. High Performance $\beta$-Ga2O3 Vertical Rectifier With Double Step Structure Termination Using Thermally Oxided TiOx Dielectrics
44. Heterogeneous non-canonical nucleosomes predominate in yeast cellsin situ
45. Field Effect Transistors and Low Noise Amplifier MMICs of Monolayer Graphene
46. Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond
47. Study on Gate Leakage and Trapping Effect in InAIN/GaN HEMTs
48. AlGaN/GaN HFET power amplifier integrated with microstrip antenna for RF front-end applications
49. Oxygen annealing impact onβ -Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density
50. 128-pixel arrays of 4H-SiC UV APD with dual-frequency PECVD SiNx passivation
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