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The effects of temperature on the electrical properties of double gate DG-MOSFETs transistors in 4H-SiC and 6H-SiC technologies have been investigated and compared with single gate SG-MOSFET transistor using 130nm technology and BSIM3v3 model. In which the equivalent electronic circuits have been used for the two models (Series and Parallel) of the DG-MOSFET transistor. The current-voltage-temperature (I-V-T), transconductance-temperature (gm-T) and On/Off current ratio-temperature (ION/IOFF-T) characteristics have shown that the DG-MOSFETs are strongly affected by the temperature variation, especially the SG-MOSFET and DG-MOSFETs in 6H-SiC, as well as the DG-MOSFET transistor (Parallel model) in different semiconductor technologies is very sensitive to temperature variation compared to other transistors. The results obtained allowed the ability to predict the thermal behaviour of these transistors, and how effective are these devices in the very high temperature applications in a range from -200°C to 650°C. In addition, these transistors operate under low voltage and low power. [ABSTRACT FROM AUTHOR]

In this paper, the electrical performance of double gate DG-MOSFET transistors in 4H-SiC and 6H-SiC technologies have been studied by BSIM3v3 model. In which the I–V and gm–V characteristics and subthreshold operation of the DGMOSFET have been investigated for two models (series and parallel) based on equivalent electronic circuits and the results so obtained are compared with the single gate SG-MOSFET, using 130 nm technology and OrCAD PSpice software. The electrical characterization of DG-MOSFETs transistors have shown that they operate under a low voltage less than 1.2 V and low power for both models like the SG-MOSFET transistor, especially the series DG-MOSFET transistor is characterized by an ultra low power. The different transistors are characterized by an ultra low OFF leakage current of pA order, very high ON/OFF ratio of and high subthreshold slope of order 0.1 V/dec for the transistors in 6H-SiC and 4H-SiC respectively. These transistors also proved higher transconductance efficiency, especially the parallel DG-MOSFET transistor. [ABSTRACT FROM AUTHOR]

Silicon carbide is a very interesting semiconductor for applications in high temperature, high frequency and high power. In this article, we have studied and compared MOS transistors with 130nm silicon carbide (3C-SiC, 4H-SiC and 6H-SiC) technologies using BSIM3v3 model. To perform this work we have used PSpice to study the characteristics I(V) and the transconductance gm as a function of temperature in the range -200° C to 750° C with a supply voltage VDS = 1.2V. We have also calculated the transition frequencies fT of the three types of transistors. Our results show that the (3C, 4H and 6H)-SiC transistors operate under a low voltage, low power, high temperature and high frequency in submicron dimension. [ABSTRACT FROM AUTHOR]