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3. In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate

4. InGaAs and Ge MOSFETs with a common high κ gate dielectric

7. Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS

11. Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors.

12. Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100).

13. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2.

14. Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices.

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