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Your search keyword '"Iza, Mike"' showing total 17 results
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17 results on '"Iza, Mike"'

1. Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective.

Author

Li, Panpan, Ewing, Jacob, Wong, Matthew S., Yao, Yifan, Li, Hongjian, Gandrothula, Srinivas, Smith, Jordan M., Iza, Mike, Nakamura, Shuji, and DenBaars, Steven P.

Subjects
INDIUM gallium nitride, AUGMENTED reality, DIODES, LED displays
Abstract

Micro-light-emitting diodes (µLEDs) are gathering significant interest as a technology for emerging micro-displays. However, µLEDs encounter numerous obstacles, including size-dependent efficiency loss, poor efficiency of red µLEDs, and challenges associated with the mass transfer and integration of full-color µLEDs. These issues become more acute in ultra-small µLEDs (<5 µm), which were required by the augmented reality (AR) displays. Here, we discuss the principal challenges faced by µLEDs and explore the possible solutions. We highlight recent advances in InGaN-based RGB µLEDs tailored for AR displays. In particular, we discuss the advancements in ultra-small InGaN µLEDs scaled down to 1 µm, the developments in InGaN red µLEDs, and the implementation of tunnel junction-based cascaded InGaN µLEDs for monolithic integration. [ABSTRACT FROM AUTHOR]

Published
2024
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5. Progress of InGaN-Based Red Micro-Light Emitting Diodes

Author

Li, Panpan, primary, Li, Hongjian, additional, Wong, Matthew S., additional, Chan, Philip, additional, Yang, Yunxuan, additional, Zhang, Haojun, additional, Iza, Mike, additional, Speck, James S., additional, Nakamura, Shuji, additional, and Denbaars, Steven P., additional

Published
2022
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6. Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact

Author

Li, Panpan, primary, Li, Hongjian, additional, Zhang, Haojun, additional, Yang, Yunxuan, additional, Wong, Matthew S., additional, Lynsky, Cheyenne, additional, Iza, Mike, additional, Gordon, Michael J., additional, Speck, James S., additional, Nakamura, Shuji, additional, and DenBaars, Steven P., additional

Published
2022
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7. Demonstration of ultra-small 5 × 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%

Author

Li, Panpan, primary, Li, Hongjian, additional, Yang, Yunxuan, additional, Zhang, Haojun, additional, Shapturenka, Pavel, additional, Wong, Matthew, additional, Lynsky, Cheyenne, additional, Iza, Mike, additional, Gordon, Michael J., additional, Speck, James S., additional, Nakamura, Shuji, additional, and DenBaars, Steven P., additional

Published
2022
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14. Demonstration of ultra-small 5 × 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%.

Author

Li, Panpan, Li, Hongjian, Yang, Yunxuan, Zhang, Haojun, Shapturenka, Pavel, Wong, Matthew, Lynsky, Cheyenne, Iza, Mike, Gordon, Michael J., Speck, James S., Nakamura, Shuji, and DenBaars, Steven P.

Subjects
QUANTUM efficiency, INDIUM gallium nitride, LIGHT emitting diodes, DIODES, AUGMENTED reality, SEMICONDUCTOR lasers, VIRTUAL reality
Abstract

Red micro-size light-emitting diodes (μLEDs) less than 10 × 10 μm2 are crucial for augmented reality (AR) and virtual reality (VR) applications. However, they remain very challenging since the common AlInGaP red μLEDs with such small size suffer from a dramatic reduction in the external quantum efficiency. In this work, we demonstrate ultra-small 5 × 5 μm2 607 nm amber μLEDs using InGaN materials, which show an EQE over 2% and an ultra-low reverse current of 10−9 A at −5 V. This demonstration suggests promising results of ultra-small InGaN μLEDs for AR and VR displays. [ABSTRACT FROM AUTHOR]

Published
2022
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15. High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%.

Author

Li, Panpan, David, Aurelien, Li, Hongjian, Zhang, Haojun, Lynsky, Cheyenne, Yang, Yunxuan, Iza, Mike, Speck, James S., Nakamura, Shuji, and DenBaars, Steven P.

Subjects
QUANTUM efficiency, DIODES, WAVELENGTH measurement, HIGH temperatures, ELECTROLUMINESCENCE, REDSHIFT
Abstract

We study the high-temperature electroluminescence properties of 600 nm InGaN red 40 × 40 μm2 micro-light-emitting diodes (μLEDs) with a peak external quantum efficiency (EQE) of 3.2%. Temperature-dependent peak wavelength measurements show a low redshift of 0.05 nm/K. The injection efficiency improves with increasing temperature. The hot/cold (HC) factor is used to quantify the thermal droop: at 400 K, the EQE and wall-plug efficiency HC factors at 50 A/cm2 reach high values of 0.72 and 0.85, respectively. This demonstrates the robustness of InGaN red μLEDs up to high temperature, with a much-improved stability over conventional AlInGaP red μLEDs. [ABSTRACT FROM AUTHOR]

Published
2021
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16. InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5%

Author

Li, Panpan, Li, Hongjian, Yang, Yunxuan, Wong, Matthew S., Iza, Mike, Gordon, Michael J., Speck, James S., Nakamura, Shuji, and DenBaars, Steven P.

Abstract

We demonstrate high-performance 10 × 10 μm2InGaN amber micro-size LEDs (μLEDs). At 15 A cm−2, the InGaN μLEDs show a single emission peak located at 601 nm. The peak external quantum efficiency (EQE) and wall-plug efficiency are 5.5% and 3.2%, respectively. Compared to the 100 × 100 μm2μLEDs, the 10 × 10 μm2InGaN red μLEDs maintain a similar EQE value with the same efficiency droop. These results point out that InGaN materials are much more promising for higher efficiency than the common AlInGaP materials for the ultra-small size red μLEDs required by augmented reality and virtual reality displays.

Published
2023
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