Search

The electron mobility of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with the ratio of the gate length to the drain-to-source distance being less than 1/2 has been studied in the temperature range 100 300 K. The measured electron mobility at each testing temperature is obtained by using the capacitance-voltage ( C- V) and current-voltage ( I- V) characteristics measured at the corresponding temperature, and the theoretically calculated temperature-dependent electron mobility is determined by Matthiessen's law, which includes five kinds of important scattering mechanisms. For the prepared sample, the measured electron mobility with respect to the two-dimensional electron gas (2DEG) density was observed to increase to a peak point first and then decrease at each testing temperature. By comparing the measured electron mobility with the theoretically calculated value, the changing trend of the electron mobility at each testing temperature was found to be mainly determined by polarization Coulomb field (PCF) scattering. Particularly at lower temperature, PCF scattering plays a more significant role in the changing trend of the electron mobility. [ABSTRACT FROM AUTHOR]

An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted from the conductance--voltage (G-V) curve and found to be in good agreement with the ones obtained by using the capacitance--voltage (C-V) curve integration and the plot of dV/d(ln I) versus current I. Thus, a method of directly and simultaneously extracting both the threshold voltage and the series resistance from the conductance--voltage curve for the AlGaN/GaN Schottky diode is developed. [ABSTRACT FROM AUTHOR]

We simulate the current--voltage (I--V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths using the quasi-two-dimensional (quasi-2D) model. The calculation results obtained using the modified mobility model are found to accord well with the experimental data. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with the electric field in the linear region of the Al- GaN/AlN/GaN HFET I--V output characteristics, it is found that the polarization Coulomb field scattering still plays an important role in the electron mobility of AlGaN/AlN/GaN HFETs at the higher drain voltage and channel electric field. As drain voltage and channel electric field increase, the 2DEG density reduces and the polarization Coulomb field scattering increases, as a result, the 2DEG electron mobility decreases. [ABSTRACT FROM AUTHOR]

Using measured capacitance--voltage curves and current--voltage characteristics for the AlGaN/AlN/GaN heterostructure field-effect transistors with different gate lengths and drain-to-source distances, the influence of drain bias on the electron mobility is investigated. It is found that below the knee voltage the longitudinal optical (LO) phonon scattering and interface roughness scattering are dominant for the sample with a large ratio of gate length to drain-to-source distance (here 4/5), and the polarization Coulomb field scattering is dominant for the sample with a small ratio (here 1/5). However, the above polarization Coulomb field scattering is weakened in the sample with a small drain-to-source distance (here 20 µm) compared with the one with a large distance (here 100 µm). This is due to the induced strain in the AlGaN layer caused by the drain bias. [ABSTRACT FROM AUTHOR]

Rectangular Schottky drain AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate contact areas and conventional AlGaN/AlN/GaN HFETs as control were both fabricated with same size. It was found there is a significant difference between Schottky drain AlGaN/AlN/GaN HFETs and the control group both in drain series resistance and in two-dimensional electron gas (2DEG) electron mobility in the gate--drain channel. We attribute this to the different influence of Ohmic drain contacts and Schottky drain contacts on the strained AlGaN barrier layer. For conventional AlGaN/AlN/GaN HFETs, annealing drain Ohmic contacts gives rise to a strain variation in the AlGaN barrier layer between the gate contacts and the drain contacts, and results in strong polarization Coulomb field scattering in this region. In Schottky drain AlGaN/AlN/GaN HFETs, the strain in the AlGaN barrier layer is distributed more regularly. [ABSTRACT FROM AUTHOR]

Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/GaN Schottky barrier diodes (SBDs). Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts (RS) was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating RS was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDS. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AlGaN/AlN/GaN SBDS and the AlGaN/AlN/GaN HFETs. [ABSTRACT FROM AUTHOR]

Using the measured capacitance-voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving Schrödinger's and Poisson's equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an in°uence on the value of the relative permittivity. As the reverse bias increases from 0 V to -3 V, the value of the relative permittivity decreases from 7.184 to 7.093. [ABSTRACT FROM AUTHOR]

A simple and effective approach to improve the switching characteristics of AlGaN/AlN/GaN heterostructure field effect transistors (HFETs) by applying a voltage bias on the substrate is presented. With the increase of the substrate bias, the OFF-state drain current is much reduced and the ON-state current keeps constant. Both the ON/OFF current ratio and the subthreshold swing are demonstrated to be greatly improved. With the thinned substrate, the improvement of the switching characteristics with the substrate bias is found to be even greater. The above improvements of the switching characteristics are attributed to the interaction between the substrate bias induced electrical field and the bulk traps in the GaN buffer layer, which reduces the conductivity of the GaN buffer layer. [ABSTRACT FROM AUTHOR]

Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices. [ABSTRACT FROM AUTHOR]

In this study rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with 22-nm and 12-nm AlGaN barrier layers are fabricated, respectively. Using the measured capacitance–voltage and current–voltage characteristics of the prepared devices with different Schottky areas, it is found that after processing the device, the polarization Coulomb field (PCF) scattering is induced and has an important influence on the two-dimensional electron gas electron mobility. Moreover, the influence of PCF scattering on the electron mobility is enhanced by reducing the AlGaN barrier thickness. This leads to the quite different variation of the electron mobility with gate bias when compared with the AlGaN barrier thickness. This mainly happens because the thinner AlGaN barrier layer suffers from a much stronger electrical field when applying a gate bias, which gives rise to a stronger converse piezoelectric effect. [ABSTRACT FROM AUTHOR]

In this study, we investigate the effects of GaN cap layer thickness on the two-dimensional electron gas (2DEG) electron density and 2DEG electron mobility of AlN/GaN heterostructures by using the temperature-dependent Hall measurement and theoretical fitting method. The results of our analysis clearly indicate that the GaN cap layer thickness of an AlN/GaN heterostructure has influences on the 2DEG electron density and the electron mobility. For the AlN/GaN heterostructures with a 3-nm AlN barrier layer, the optimized thickness of the GaN cap layer is around 4 nm and the strained a-axis lattice constant of the AlN barrier layer is less than that of GaN. [ABSTRACT FROM AUTHOR]

Abstract: We have investigated the thermal stability of GaN powders using DTA–TG, XRD, and XPS. GaN powders have been treated below 1400°C in the flowing stream of N2 gas. The pure GaN powders is indecomposable below 1120°C, but annealing at 1050°C results in the degradation of the crystalline quality of the GaN powders. With the increase of the temperature, more and more GaN powders are separated into Ga metal in the temperature range of 1120–1312°C, but the decomposition of GaN is propitious to improvement of the crystalline quality of GaN. When the temperature exceeds 1312°C, all the GaN powders are converted into Ga metal. The morphology of the samples obtained in the different temperature regimes was investigated using SEM. The results indicate that the average size of the samples obtained at the decomposition temperature regimes of the GaN powders is bigger. [Copyright &y& Elsevier]