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The pursuit of advanced brain‐inspired electronic devices and memory technologies has led to explore novel materials by processing multimodal and multilevel tailored conductive properties as the next generation of semiconductor platforms, due to von Neumann architecture limits. Among such materials, antimony sulfide (Sb2S3) thin films exhibit outstanding optical and electronic properties, and therefore, they are ideal for applications such as thin‐film solar cells and nonvolatile memory systems. This study investigates the conduction modulation and memory functionalities of Sb2S3 thin films deposited via the vapor transport deposition technique. Experimental results indicate that the Ag/Sb2S3/Pt device possesses properties suitable for memory applications, including low operational voltages, robust endurance, and reliable switching behavior. Further, the reproducibility and stability of these properties across different device batches validate the reliability of these devices for practical implementation. Moreover, Sb2S3‐based memristors exhibit artificial neuroplasticity with prolonged stability, promising considerable advancements in neuromorphic computing. Leveraging the photosensitivity of Sb2S3 enables the Ag/Sb2S3/Pt device to exhibit significant low operating potential and conductivity modulation under optical stimulation for memory applications. This research highlights the potential applications of Sb2S3 in future memory devices and optoelectronics and in shaping electronics with versatility. [ABSTRACT FROM AUTHOR]

Solid Lipid Nanoparticles (SLNs) are useful carriers for delivering BCS II and IV drugs. SLNs microstructure is decisive parameter to attain significant drug payload. Its inability to retain hydrophilic molecules demands smart exploitation of SLNs that begins with careful selection of structural components. Besides, other challenges as lipid polymorphism and molecular interactions substantially influence SLNs properties asking for a detailed microstructural investigation. This work attempts to provide a comprehensive yet critical view on SLNs from microstructural perspective. These structural attributes are conclusive while entrusting their functionality. Besides with better understanding of their assembly mechanics it is practicable to devise SLNs of desired properties. [ABSTRACT FROM AUTHOR]

In the present work, we have synthesized tin disulphide (SnS2) thin films via a facile, low cost, single-step hydrothermal route using various surface directing agents. The SnS2 thin films were characterized for their optical, structural and morphological properties. The optical study illustrated a direct allowed type of optical transition with a bandgap in the range of 1.78 to 2.03 eV. Morphological study demonstrated the formation of hierarchical nutshell surface morphologies, when using different surfactants, having higher surface-to-volume ratios for better light absorption. The structural study revealed that nanocrystalline SnS2 thin films were formed with a pure hexagonal crystal structure with crystallite size ranging between 12.24 and 19.79 nm. Compositional analysis confirmed the formation of pure and stoichiometric SnS2 thin films. Finally, we carefully analyzed the photoresponse properties of the as synthesized and surfactant-assisted SnS2 thin films with the help of a standard two-electrode system on an electrochemical workstation where SnS2 thin films acted as the working electrode and graphite acted as the counter electrode. Photocurrent (Jsc) was enhanced with the use of the surface directing agents from 0.24 to 0.96 mA cm2 allied with a photovoltage (Voc) from 416 to 610.2 mV. The highest photoelectric conversion efficiency was obtained for the Triton X-100 assisted SnS2 photoanode and it was 0.83%. EIS performance of SnS2 thin films synthesized with surfactants demonstrated reduced charge transfer resistance (Rct), which supports the PEC (photoelectrochemical) performance. [ABSTRACT FROM AUTHOR]