129 results on '"Zhao, Qing-Tai"'
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2. Physics-based compact current model for Schottky barrier transistors at deep cryogenic temperatures including band tail effects and quantum oscillations
3. Low contact resistance of NiGeSn on n-GeSn
4. Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide
5. Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures
6. Cryogenic characteristics of UTBB SOI Schottky-Barrier MOSFETs
7. Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures
8. Room Temperature Lattice Thermal Conductivity of GeSn Alloys.
9. Impact of gate to source/drain alignment on the static and RF performance of junctionless Si nanowire n-MOSFETs
10. Vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around nanowire pMOSFETs with NiGeSn contact
11. Transient negative capacitance and charge trapping in FDSOI MOSFETs with ferroelectric HfYOX
12. A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate
13. Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity
14. Experimental demonstration of improved analog device performance of nanowire-TFETs
15. Toward Low‐Power Cryogenic Metal‐Oxide Semiconductor Field‐Effect Transistors.
16. High performance strained Si0.5Ge0.5 quantum-well p-MOSFETs fabricated using a high-κ/metal-gate last process
17. Homogeneous NiSi1−xGex layer formation on strained SiGe with ultrathin Ni layers
18. Ultrathin homogeneous Ni(Al) germanosilicide layer formation on strained SiGe with Al/Ni multi-layers
19. Improved LDMOS performance with buried multi-finger gates
20. Isothermal Heteroepitaxy of Ge1–xSnx Structures for Electronic and Photonic Applications.
21. Ultrathin epitaxial Ni-silicide contacts on (1 0 0) Si and SiGe: Structural and electrical investigations
22. Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes.
23. Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface
24. Electrical characterization of Ω-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with - and channel orientations
25. Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs: C–V characteristics, mobility, and ON current
26. Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature.
27. Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications.
28. Damage profiles in silicon tilt angles bombarded by high energy Cu ions
29. Lateral spread effects in the implantation of Ar+, Xe+, and Hg+ in Si3N4 films
30. Schottky-barrier height tuning using dopant segregation in Schottky-barrier MOSFETs on fully-depleted SOI
31. Epitaxial GeSn/Ge Vertical Nanowires for p‑Type Field-Effect Transistors with Enhanced Performance.
32. Lattice disorder in silicon induced by 2.0 MeV Cu+ irradiation
33. Self-Assembly CoSi2-Nanostructures for Fabrication of Schottky Barrier MOSFETs on SOI
34. Diameter Scaling of Vertical Ge Gate- All-Around Nanowire pMOSFETs.
35. Phase evolution of ultra-thin Ni silicide films on CF4 plasma immersion ion implanted Si.
36. Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm.
37. 2-D Physics-Based Compact DC Modeling of Double-Gate Tunnel-FETs.
38. Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors.
39. Gettering effects in BF2-implanted Si(100) by ion-beam defect engineering.
40. Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering.
41. Depth distribution of Hg ions at energies from 50 to 400 keV implanted in potassium titanyl phosphate.
42. Depth profiles of Xe ions at energies from 50 to 500 keV in ladderlike polyphenylsilsesquioxane.
43. Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions.
44. Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study.
45. Experimental Investigation of C ? V Characteristics of Si Tunnel FETs.
46. Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions.
47. Experimental $I$ ? $V(T)$ and $C$ ? $V$ Analysis of Si Planar p-TFETs on Ultrathin Body.
48. Line Tunneling Dominating Charge Transport in SiGe/Si Heterostructure TFETs.
49. Investigation of lateral straggling of Xe ions in potassium titanyl phosphate.
50. Distributions of implanted Fe ions in quartz crystal and silicon.
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