1. Measurement Methodology for Accurate Modeling of SiC MOSFET Switching Behavior Over Wide Voltage and Current Ranges.
- Author
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Sakairi, Hiroyuki, Yanagi, Tatsuya, Otake, Hirotaka, Kuroda, Naotaka, and Tanigawa, Hiroaki
- Subjects
SILICON carbide ,FIELD effect transistor switches ,EXTRACTION (Chemistry) ,WAVE analysis ,CAPACITANCE meters - Abstract
This paper presents two novel measurement methods to characterize silicon carbide (SiC) MOSFET devices. The resulting data are utilized to significantly improve the extraction of a custom device model that can now accurately reproduce device switching behavior. First, we consider the $I_{\text{d}}- V_{\text{ds}}$ output characteristics of power devices such as SiC transistors. These are typically measured using traditional curve tracers, but the characterization of the high-voltage and high-current (HVHC) region is very challenging because of device power compliance and self-heating. In this paper, we introduce a measurement technique that overcomes self-heating and derives the HVHC region from switching waveforms. The switching transient characteristics of devices are used to determine drain current $(I_{\text{d}})$ as a function of drain–source voltage $(V_{\text{ds}})$ in the HVHC range. Second, we consider another challenging characterization area: measurement of nonlinear capacitances when device is turned on. These capacitance characteristics of on-state devices are important for correcting disagreements between simulations and measurements in turn-off switching transient waveforms and cannot be measured using a conventional capacitance-voltage meter. We introduce S-parameter measurements as an effective method to obtain the capacitance characteristics of both off-state devices and on-state devices. These novel measurement techniques have been applied to the modeling of a SiC device. The extracted device model, a modified version of the popular Angelov−GaN high-electron-mobility transistor model, shows significant improvement in terms of the accuracy of switching waveforms of devices over a wide range of operating conditions. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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