Discusses the presentations and papers in the International Electron Devices Meeting in San Francisco, California, on December, 2000. Sessions that shed light or progress and future challenges for a variety of semiconductor technologies; Developments in the high-speed analog and mixed signal arena; Use of gallium-arsenide heterojunction bipolar transistor as power amplifiers.
*COMPLEMENTARY metal oxide semiconductors, *DIELECTRIC devices, *ELECTRONICS conventions, *SEMICONDUCTORS
Abstract
The article reports on the progress in the development of high-k metal gate dielectric (HK+MG) CMOS for 32nm and beyond. It mentions that an assortment of papers presented at the International Electron Devices Meeting (IEDM) 2008 in San Francisco, California show steadily improving results even though the routes may vary. It discusses the challenges in the development of uniform manufacturable semiconductor devices.
Reports on the holding of the 48th International Electron Devices Meeting in San Francisco, California, from December 8-11, 2002. Topics of the opening papers session; Product introductions.
Published
2002
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.