151. A 65–81 GHz CMOS Dual-Mode VCO Using High Quality Factor Transformer-Based Inductors.
- Author
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Basaligheh, Ali, Saffari, Parvaneh, Filanovsky, Igor M., and Moez, Kambiz
- Subjects
VOLTAGE-controlled oscillators ,COMPLEMENTARY metal oxide semiconductors ,MILLIMETER waves ,POWER resources ,Q-switching ,PHASE noise ,QUALITY factor - Abstract
This paper presents a wide-tuning range dual-mode millimeter wave (mm-wave) voltage controlled oscillator (VCO) incorporating high quality-factor (Q) transformer-based variable inductors. A high Q switched inductor with two different values is proposed by constructing the load of a transformer of a high Q fixed capacitor in series with a lossless switch structure that does not add any loss to the LC-tank as implemented by changing the signals mode across the capacitor. By choosing a proper center frequency for each mode and sufficient frequency overlap, a wide frequency tuning range (FTR) mm-wave VCO can be designed. It provides almost twice higher tuning range while keeping phase noise (PN) nearly the same as the two-mode VCO designed with two standalone inductors. Fabricated in a 65 nm CMOS process, the VCO demonstrates the measured FTR of 22.8% from 64.88 to 81.6 GHz range. The measured peak PN at 10 MHz offset is -114.63 dBc/Hz and the maximum and minimum corresponding figures of merit FOM and FOM $_{\mathbf {T}}$ are -173.9 to -181.84 dB and -181.07 to -189 dB, respectively. The VCO cores consume 10.2 mA current from 1 V power supply, and the occupied area is $0.146\times 0.205$ mm $^{\mathbf {2}}$. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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