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SUMMARYRuddlesden-Popper (RP) perovskites are two-dimensional semiconductors for high performance devices. In this work, we report a long in-plane charge carrier diffusion length in 2D RP perovskite single crystals probed by scanning photocurrent microscopy. Carrier diffusion lengths of 7~14 µm are observed when the number of PbI6-2 octahedrons between organic spacers increases from 1 to 3. By detailed light intensity and electric field-dependent photocurrent measurements, we attribute the observed long diffusion length to the dominating dissociated free carrier transport. This is further validated by time-resolved photoluminescence measurements where the decay lifetime increases in the presence of an electric field. From our experiments, we conclude that the in-plane transport in RP perovskites is efficient because of the partial free carrier generation overcoming strong excitonic effects. Our results suggest that semiconducting devices fabricated from RP perovskite single crystals can be as efficient as their 3D counterparts.

Perovskite solar cells (PSCs) employing organic–inorganic hybrid lead perovskite have attracted much attention as promising next generation solar cells because of their low fabrication cost and extremely high power conversion efficiency (PCE). Exploring new perovskite materials and additives is one of the effective strategies to improve the performance of PSCs. Here, we synthesized formamide iodide (FoAI) and applied it as both a cation material and additive. Although it was revealed that FoAI is not incorporated in the A-site of the perovskite structure, we found that the FoAI additive suppresses δ-FAPbI3 formation and improved the performance of FAPbI3 based PSCs. The PCE was improved from 12.29% to 14.49% by adding 5 mol% of FoAI in the precursor solution. Meanwhile, we found that FoAI additive can also improve the performance of triple-cation PSCs. We believe that FoAI is one of the promising additives to boost the PCE of PSCs without any influence on the composition of the perovskite materials.

Most chemical vapor deposition methods for transition metal dichalcogenides use an extremely small amount of precursor to render large single-crystal flakes, which usually causes low coverage of the materials on the substrate. In this study, a self-capping vapor-liquid-solid reaction is proposed to fabricate large-grain, continuous MoS2 films. An intermediate liquid phase-Na2Mo2O7 is formed through a eutectic reaction of MoO3 and NaF, followed by being sulfurized into MoS2. The as-formed MoS2 seeds function as a capping layer that reduces the nucleation density and promotes lateral growth. By tuning the driving force of the reaction, large mono/bilayer (1.1 mm/200 μm) flakes or full-coverage films (with a record-high average grain size of 450 μm) can be grown on centimeter-scale substrates. The field-effect transistors fabricated from the full-coverage films show high mobility (33 and 49 cm2 V−1 s−1 for the mono and bilayer regions) and on/off ratio (1 ~ 5 × 108) across a 1.5 cm × 1.5 cm region., Here, the authors develop a self-capping vapour-liquid-solid reaction to fabricate large-grain continuous MoS2 films, whereby an intermediate liquid phase-Na2Mo2O7 is formed through a eutectic reaction of MoO3 and NaF, followed by sulphurisation into MoS2.

The growth process control (GPC) method, a new method which is better than thermal evaporation, for producing high-crystallinity perovskites by controlling the growth time in a low vacuum, is explored in this work. Inspired by evaporation technology, GPC is an effective method for modifying traditional thermal evaporation and for controlling the crystal growth of perovskite CH3NH3I3. Compared to fabrication with the process of co-evaporation, the MAPbI3 perovskite solar cell fabricated by GPC has high uniformity and film coverage. All of the manufacturing is carried out outside of the glove box. It provides an easy and effective way for perovskite fabrication for industrialization. Here, after using GPC to form perovskite solar cells, the residual methylammonium iodide (MAI) and PbI2 which is produced by the evaporation process can react completely, observed by time of flight secondary ion mass spectrometry (TOF-SIMS). Finally, formed by GPC, perovskite solar cells exhibit high performance and fewer crystal defects. The electron and hole recombination is greatly reduced. Through the GPC method, the Jsc and the filling factor are improved with the increase of time after the fabrication. The power conversion efficiency was increased from 11.12% to 16.4%.

A carrier transport layer and its interfacial effects on an organometal halide perovskite light harvesting layer play an influential factor in either photovoltaic performance or long-term stability of a perovskite solar cell (OHPSC). Although the understandings of the carrier transport layers and interfacial effects on regular structured OHPSCs have been explored, knowledge of an interface between hole transport layer of NiOx and perovskite in an inverted OHPSC is still necessary to be developed. Here, we performed a universal NiOx film with the sequential passivation strategy of NiCl2 (SPS-NiCl2 treatment) for either wide bandgap or narrow bandgap of OHPSCs. The SPS-NiCl2 treated NiOx film not only implements the passivation at the perovskite layer/NiOx film interface but also confers itself a gradient energy level of valance band inducing by chloride. Comprehensive characterizations reveal that the SPS-NiCl2 treated NiOx film suppresses non-radiative recombination at the interface and enlarges the splitting of the quasi-Fermi level at the interfaces. The photoconversion efficiency (PCE) of the champion device comprised of the SPS-NiCl2 treated NiOx film can achieve 19.53% with a record Voc of 1.16 V, the lowest Voc deficit of 390 mV in NiOx based inverted OHPSCs. The corresponding devices with encapsulation also exhibit superior long-term stability, and over 80% of initial PCE can be maintained after 1500 h damp-heat test. This study sheds the light on managing the interfacial issues of an inverted OHPSC and offers a feasible path to develop a universal hole transport layer for perovskite layers with different energy bandgap.

This study attempts to enhance broadband absorption in advanced plasmonic circular nanostructures (PCN). Experimental results indicate that the concentric circular metallic gratings can enhance broadband optical absorption, due to the structure geometry and the excitation of surface plasmon mode. The interaction between plasmonic enhancement and the absorption characteristics of the organic materials (P3HT:PCBM and PEDOT:PSS) are also examined. According to those results, the organic material's overall optical absorption can be significantly enhanced by up to~51% over that of a planar device. Additionally, organic materials are enhanced to a maximum of 65% for PCN grating pitch = 800 nm. As a result of the PCN's enhancement in optical absorption, incorporation of the PCN into P3HT:PCBM-based organic solar cells (OSCs) significantly improved the performance of the solar cells: short-circuit current increased from 10.125 to 12.249 and power conversion efficiency from 3.2% to 4.99%. Furthermore, optimizing the OSCs architectures further improves the performance of the absorption and PCE enhancement.