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Two-dimensional materials have excellent electronic and optical properties, suggesting absolute advantages in nanodevices. In this work, a new two-dimensional material with a puckered structure, a C2B6 monolayer, is proposed. The material presents dynamic and thermal stability calculated by first-principle simulations. Interestingly, the C2B6 monolayer possesses semiconductor behavior with an ultra-narrow bandgap of approximately 0.671 eV by HSE06 functional. Meanwhile, the hole in the C2B6 monolayer shows ultrahigh mobility at approximately 6,342 cm2⋅V−1⋅s−1 in decent transport directions, which is larger than traditional transition metal dichalcogenides materials. More importantly, the pronounced anisotropy of mobility of the electrons and holes can separate the photogenerated charges, suggesting the applications for photocatalytic, photovoltaic and optical and cold chain electronic devices. Then, the novel properties of the light absorption characteristic are obtained, and the anisotropic photocurrent implies the C2B6 monolayer can be used as a potential photoelectric device. Our results provide theoretical guidance for the design and application of two-dimensional materials. [ABSTRACT FROM AUTHOR]

Composites consisting of two nano-or molecular-scale components tend to exhibit newer properties or characterizations compared to the matrix material. However, they are extremely limited in thermoelectricity due to the difficulty of achieving an extremely homogeneous distribution of the material on such a small scale. In this paper, we successfully prepared a series of composite thermoelectric materials of Sr 0.9 La 0.1 Ti 0.85 Nb 0.15 O 3 /carbon nanotubes (CNTs, with contents of 0.5, 1.5, 2.5, and 5.0 wt%). Highly homogeneous dispersion of CNTs was observed in the strontium titanate oxide (SrTiO 3) matrix prepared via high-temperature and high-pressure (HPHT) synthesis due to the interaction between SrTiO 3 and multi-walled CNTs. The experimental results showed that CNTs were uniformly dispersed in the composite powders synthesized using the HPHT method. Meanwhile, the electrical conductivity increased linearly with the increase in the CNTs content. The power factor reached 684 μWm−1K−2 at 973K with 2.5 wt% CNTs composite concentration. This considerable enhancement is attributed to the increase in the charge carrier concentration as well as the higher electron mobility. In addition, the lattice thermal conductivity was suppressed due to enhanced Umklapp scattering. This ultimately leads to a thermoelectric figure of merit, zT , of 0.33 at 973 K. This work opens a new window on the thermoelectric properties of nanocomposite SrTiO 3 -based thermoelectric materials. [ABSTRACT FROM AUTHOR]

The heterojunctions based transition metal carbide (MXenes) provides new possibilities for achieving high-performance photodetector. The electronic, mechanical, optical, and photocatalytic properties of the Hf 2 CO 2 -based heterojunctions are calculated based on first-principles calculations, and the photocurrent (I ph) and extinction ratio (ER) are calculated based on quantum transport simulations. The Hf 2 CO 2 /Sc 2 CF 2 , Hf 2 CO 2 /Zr 2 CO 2 , and Hf 2 CO 2 /Sc 2 CCl 2 heterojunctions are ionic semiconductors with indirect bandgap. The Hf 2 CO 2 /Sc 2 CF 2 heterojunction exhibits high solar to hydrogen efficiency (η STH) of 40.14 % and applying biaxial strain can effectively modulate the η STH of the Hf 2 CO 2 /Zr 2 CO 2 heterojunction. The Hf 2 CO 2 /Zr 2 CO 2 heterojunction has low overpotentials (ηHER) of 0.19 V and exhibits high electron mobility. The photodetector based on the Hf 2 CO 2 /Zr 2 CO 2 heterojunction exhibits high I ph , and the photodetector based on the Hf 2 CO 2 /Sc 2 CF 2 heterojunction has large ER and sensitivity to infrared and ultraviolet polarized light. The I ph and ER are significant increase by bending the photodetector. Our research indicates the potential applications of the Hf 2 CO 2 -based heterojunctions in photocatalytic water splitting and photodetector. [Display omitted] [ABSTRACT FROM AUTHOR]

Indium phosphide (InP) is widely utilized in the fields of electronics and photovoltaics due to its high electron mobility and high photoelectric conversion efficiency. Strain engineering has been extensively employed in semiconductor devices to adjust physical properties and enhance material performance. In the present work, the band structure and electronic effective mass of InP under different strains are investigated by ab initio calculations. The results show that InP consistently exhibits a direct bandgap under different strains. Both uniaxial strain and biaxial tensile strain exhibit linear effects on the change in bandgap values. However, the bandgap of InP is significantly influenced by uniaxial compressive strain and biaxial tensile strain, respectively. The study of the InP bandgap under different hydrostatic pressures reveals that InP becomes metallic when the pressure is less than −7 GPa. Furthermore, strain also leads to changes in effective mass and the anisotropy of electron mobility. The studies of electronic properties under different strain types are of great significance for broadening the application of InP devices. [ABSTRACT FROM AUTHOR]

Indium phosphide (InP) is an excellent material used in space electronic devices due to its direct band gap, high electron mobility, and high radiation resistance. Displacement damage in InP, such as vacancies, interstitials, and clusters, induced by cosmic particles can lead to the serious degradation of InP devices. In this work, the analytical bond order potential of InP is modified with the short-range repulsive potential, and the hybrid potential is verified for its reliability to simulate the atomic cascade collisions. By using molecular dynamics simulations with the modified potential, the primary damage defects evolution of InP caused by 1–10 keV primary knock-on atoms (PKAs) are studied. The effects of electronic energy loss are also considered in our research. The results show that the addition of electronic stopping loss reduces the number of point defects and weakens the damage regions. The reduction rates of point defects caused by electronic energy loss at the stable state are 32.2% and 27.4% for 10 keV In-PKA and P-PKA, respectively. In addition, the effects of electronic energy loss can lead to an extreme decline in the number of medium clusters, cause large clusters to vanish, and make the small clusters dominant damage products in InP. These findings are helpful to explain the radiation-induced damage mechanism of InP and expand the application of InP devices. [ABSTRACT FROM AUTHOR]

In polarizable materials, electronic charge carriers interact with the surrounding ions, leading to quasiparticle behavior. The resulting polarons play a central role in many materials properties including electrical transport, interaction with light, surface reactivity, and magnetoresistance, and polarons are typically investigated indirectly through these macroscopic characteristics. Here, noncontact atomic force microscopy (nc-AFM) is used to directly image polarons in Fe2O3 at the single quasiparticle limit. A combination of Kelvin probe force microscopy (KPFM) and kinetic Monte Carlo (KMC) simulations shows that the mobility of electron polarons can be markedly increased by Ti doping. Density functional theory (DFT) calculations indicate that a transition from polaronic to metastable free-carrier states can play a key role in migration of electron polarons. In contrast, hole polarons are significantly less mobile, and their hopping is hampered further by trapping centers. [ABSTRACT FROM AUTHOR]

In this proposed work focuses to overcome the traditional doping challenges in L-shaped tunnel field transistors by using charge plasma (CP) concept and increase current conduction by forming heterogeneous junction (SiC-Si-SiC). Silicon carbide is used for the material for Source and Drain. The concept of charge plasma is implemented in the source and drain regions by implementing different work functions and to improve current conduction the source and drain regions is made of Silicon Carbide and the channel is made of Silicon which forms heterojunction which creates horizontal tensile strain and vertical compressive strain in the channel region which increases electron mobility mainly for low-power semiconductor applications. The performance of device parameters like the transfer characteristics subthreshold swing, output characteristics have been described. Analysis of Threshold Voltage, drain current and ION/IOFF ratio have been carried for CP based L-TFET. Sentaurus Technology Computer Aided Design (TCAD) has been used to evaluate and analyze the device for the CP-based TFET. The device was simulated in the Sentaurus TCAD in which the certain parameters are evaluated in which certain models such as, Slotboom model is applied to consider the impact of doping concentrations on energy bandgap narrowing in the source/drain (S/D) regions. Also, Fermi statistics and Shockley-Read-Hall recombination models are used. The inclusion of charge plasma and SiC in the device improves the electron mobility and current conduction is improved with less leakage current and can be used for low power applications such as inverter, memory devices. [ABSTRACT FROM AUTHOR]

The escalating interest in 2D nanoflakes‐based group‐IVA metal chalcogenides is attributed to their noteworthy properties, such as high electron mobility, exceptional chemical stability, and applicability across diverse scientific disciplines such as sensing, energy storage applications, supercapacitors, and lithium‐ion batteries. This study introduces an innovative self‐powered photodetector based on 2D metal chalcogenide nanoflakes (SnS2 and SnSe2) formed into nanoflowers on a silicon substrate through the hydrothermal method. The amalgamation of the light‐induced pyroelectric effect into the SnS2 photodetector achieves impressive enhancement ratios of 353%, 425%, 351%, 662%, and 153% in photoresponsivity and detectivity compared to the photovoltaic effect at 365, 456, 532, 632, and 850 nm, respectively, at zero bias. The SnSe2 photodetector achieved responsivity values of 14, 82, 36, 4, and 28 mA W−1 at the corresponding wavelengths in self‐powered mode. The SnSe2 device exhibits superior photosensitivity of 30792%, 55692%, 28803%, 9678%, and 68587% at the corresponding wavelengths, under zero bias. In addition, the photocurrent response caused by the photovoltaic‐pyroelectric effect is thoroughly defined, and the impacts of light wavelength, power intensity, and bias voltage are studied. This study presents a cutting‐edge self‐powered broadband photodetector utilizing pyroelectric materials and opens possibilities for designing high‐performance, fast photodetectors based on the pyro‐phototronic effect. [ABSTRACT FROM AUTHOR]

Fullerene derivatives are extensively employed in inverted perovskite solar cells due to their excellent electron extraction capabilities. However, [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) agglomerates easily in solution and exhibits a relatively low ionization barrier, increasing charge recombination losses and charge accumulation in the interface. Here, tetramethylthiuram disulfide (TMDS) is introduced into the PCBM solution to induce the formation of reducing sulfur radicals through UV light irradiation, allowing for n doping of the PCBM material. The resulting modified PCBM layer exhibits enhanced conductivity and electron mobility, significantly suppressing charge recombination. As a result, the resulting devices incorporating TMDS achieve a champion efficiency of 26.10% (certified 25.39%) and 24.06% at a larger area (1.0 cm2) with negligible hysteresis. More importantly, the optimized devices retain 95% and 90% of their initial efficiency after 1090 h under damp heat testing (85 °C and 85% relative humidity) and after 1271 h under maximum power point-tracking conditions, respectively. Fullerene derivatives tend to increase charge recombination losses and charge accumulation at the interface in inverted perovskite solar cells. Here, authors introduce tetramethylthiuram disulfide to induce formation of sulfur radicals for n-doping, achieving efficiency of 26.1% in stable devices. [ABSTRACT FROM AUTHOR]

The study of charge transfer in thin film solar cells made of several layers is of high importance since they may lose their energy via the recombination process at the interfaces, specifically at the interface of the electron transport layer (ETL) and perovskite. Titanium dioxide (TiO2) is mostly used as an ETL in perovskite solar cells due to its many advantages. However, TiO2 has some disadvantages, such as low electron mobility compared to the perovskite layer and electron trap states on its top at the interface. These effects cause the accumulation of carriers at the ETL/perovskite interface then the non-radiative recombination will be enhanced, which is considered as one of the significant losses in the Perovskite Solar Cells (PSCs). In this work, a new technique is taken for more optimal ETL doping. We fabricated the ETL layers with graded doping of platinum quantum dots (Pt QDs), in which Pt QDs concentration is high at the ETL/Perovskite interface and zero at the FTO/ETL interface. This strategy not only suppresses the recombination at the ETL/perovskite interface and subsequently enhances the device efficiency from 12.92 to 14.36% but also improves the stability of the PSCs. [ABSTRACT FROM AUTHOR]

Zinc and Manganese vanadates are highly regarded as potential photoanode materials for photoelectrochemical (PEC) water splitting due to their limited bandgap, varying optical and electrical characteristics based on their composition, and robust nature. To advance the practical use these materials, it is essential to creating precisely composed and structured Zinc and Manganese vanadates to enhance their overall effectiveness. In this work, we employed various morphologies, such as nanobelt flower like Zinc vanadate (ZV), nano-needle like Manganese vanadate (MV), a composite with ZV and MV, and a ZV-MV@CNF ternary composition. These novel morphologies grown on ITO substrate using a simple, hydrothermal approach without using any seed layer. The structural, surface, and optical examinations confirmed that the ZV-MV@CNF catalyst had superior visible light absorption, accelerated charge transfer, heterojunction interface between ZV and MV, and increased electron mobility, leading to outstanding photoelectrochemical performance. The photocurrent density of the ZV-MV@CNF photoanode reached 6.59 mA cm−2 at 1 V versus Ag/AgCl in a 0.25 M KOH solution under the illumination light. These results are ∼3.00, 3.52, and 1.28 times greater than the pristine ZV, MV, and ZV-MV, respectively. The fine-tuned ZV, MV, ZV-MV, and ZV-MV@CNF electrodes showed applied bias photon to current efficiency (ABPE) values of 0.09 %, 0.06 %, 0.14 %, and 0.18 %, respectively. The improved photoelectrochemical behavior of the ZV-MV@CNF electrode is credited to the excellent light absorption, and the remarkable catalytic and charge transport capabilities of CNFs. Therefore, these experimental results and characterization analysis suggested that advanced hierarchical nanostructures hold significant promise for water splitting applications. [ABSTRACT FROM AUTHOR]

Strain engineering is a widely used technique for enhancing the mobility of charge carriers in semiconductors, but its effect is not fully understood. In this work, we perform first-principles calculations to explore the variations of the mobility of electrons and holes in silicon upon deformation by uniaxial strain up to 2% in the [100] crystal direction. We compute the π11 and π12 electron piezoresistances based on the low-strain change of resistivity with temperature in the range 200 K to 400 K, in excellent agreement with experiment. We also predict them for holes which were only measured at room temperature. Remarkably, for electrons in the transverse direction, we predict a minimum room-temperature mobility about 1200 cm2 V−1 s−1 at 0.3% uniaxial tensile strain while we observe a monotonous increase of the longitudinal transport, reaching a value of 2200 cm2 V−1 s−1 at high strain. We confirm these findings experimentally using four-point bending measurements, establishing the reliability of our first-principles calculations. For holes, we find that the transport is almost unaffected by strain up to 0.3% uniaxial tensile strain and then rises significantly, more than doubling at 2% strain. Our findings open new perspectives to boost the mobility by applying a stress in the [100] direction. This is particularly interesting for holes for which shear strain was thought for a long time to be the only way to enhance the mobility. [ABSTRACT FROM AUTHOR]

La10−xNdxSi6O27 (x = 0, 0.1, 0.2, 0.3) was synthesized via planetary grinding, and dense ceramic discs were prepared using SPS technology. The structure, microstructure, density, open porosity, total conductivity and electronic conductivity of the samples were measured and analyzed, respectively. La10−xNdxSi6O27 is characterized by a hexagonal apatite structure. The elements in the sample are distributed in a uniform manner and the content is consistent with the stoichiometry. The total conductivity of La10−xNdxSi6O27 exhibits an increase with the incorporation of Nd3+ content in the doped samples of x = 0.1, 0.2, and 0.3. The total conductivity of La9.7Nd0.3Si6O27 is the highest, reaching 5.39 × 10−3 S cm−1 at 850 °C. The electron mobility of the sample is less than 1%, which is suitable for use as a solid electrolyte. [ABSTRACT FROM AUTHOR]

Sol–gel processed zinc oxide (ZnO) is one of the most widely used electron transport layers (ETLs) in inverted organic solar cells (OSCs). The high annealing temperature (≈200 °C) required for sintering to ensure a high electron mobility however results in severe damage to flexible substrates. Thus, flexible organic solar cells based on sol–gel processed ZnO exhibit significantly lower efficiency than rigid devices. In this paper, an indium‐doping approach is developed to improve the optoelectronic properties of ZnO layers and reduce the required annealing temperature. Inverted OSCs based on In‐doped ZnO (IZO) exhibit a higher efficiency than those based on ZnO for a range of different active layer systems. For the PM6:L8‐BO system, the efficiency increases from 17.0% for the pristine ZnO‐based device to 17.8% for the IZO‐based device. The IZO‐based device with an active layer of PM6:L8‐BO:BTP‐eC9 exhibits an even higher efficiency of up to 18.1%. In addition, a 1.2‐micrometer‐thick inverted ultrathin flexible organic solar cell is fabricated based on the IZO ETL that achieves an efficiency of 17.0% with a power‐per‐weight ratio of 40.4 W g−1, which is one of the highest efficiency for ultrathin (less than 10 micrometers) flexible organic solar cells. [ABSTRACT FROM AUTHOR]

This study used the first-principles-based CASTEP software to calculate the structural, electronic, and optical properties of heterojunctions based on single-layer GaN. GaN-MX2 exhibited minimal lattice mismatches, typically less than 3.5%, thereby ensuring lattice coherence. Notably, GaN-MoSe2 had the lowest binding energy, signifying its superior stability among the variants. When compared to single-layer GaN, which has an indirect band gap, all four heterojunctions displayed a smaller direct band gap. These heterojunctions were classified as type II. GaN-MoS2 and GaN-MoSe2 possessed relatively larger interface potential differences, hinting at stronger built-in electric fields. This resulted in an enhanced electron–hole separation ability. GaN-MoSe2 exhibited the highest value for the real part of the dielectric function. This suggests a superior electronic polarization capability under an electric field, leading to high electron mobility. GaN-MoSe2 possessed the strongest optical absorption capacity. Consequently, GaN-MoSe2 was inferred to possess the strongest photocatalytic capability. The band structure and optical properties of GaN-MoSe2 under applied pressure were further calculated. The findings revealed that stress significantly influenced the band gap width and light absorption capacity of GaN-MoSe2. Specifically, under a pressure of 5 GPa, GaN-MoSe2 demonstrated a significantly narrower band gap and enhanced absorption capacity compared to its intrinsic state. These results imply that the application of stress could potentially boost its photocatalytic performance, making it a promising candidate for various applications. [ABSTRACT FROM AUTHOR]

The single-layer MoS2 is a highly sought-after semiconductor material in the field of photoelectric performance due to its exceptional electron mobility and narrow bandgap. However, its photocatalytic efficiency is hindered by the rapid recombination rate of internal photogenerated electron–hole pairs. Currently, the construction of heterojunctions has been demonstrated to effectively mitigate the recombination rate of photogenerated electron–hole pairs. Therefore, this paper employs the first principles method to calculate and analyze the four heterojunctions formed by MoS2/WSe2, MoS2/MoSe2, MoS2/AlN, and MoS2/ZnO. The study demonstrates that the four heterojunctions exhibit structural stability. The construction of heterojunctions, as compared to a monolayer MoS2, leads to a reduction in the band gap, thereby lowering the electron transition barrier and enhancing the light absorption capacity of the materials. The four systems exhibit II-type heterojunction. Therefore, the construction of heterojunctions can effectively enhance the optical properties of these systems. By forming heterojunctions MoS2/WSe2 and MoS2/MoSe2, the absorption coefficient in the visible light region is significantly increased, resulting in a greater ability to respond to light compared to that of MoS2/ZnO and MoS2/AlN. Consequently, MoS2-based heterojunctions incorporating chalcogenide components WSe2 and MoSe2, respectively, exhibit superior catalytic activity compared to MoS2 heterojunctions incorporating non-chalcogenide components ZnO and AlN, respectively. The absorption spectrum analysis reveals that MoS2/MoSe2 exhibits the highest light responsivity among all investigated systems, indicating its superior photoelectric performance. [ABSTRACT FROM AUTHOR]

[Display omitted] Semiconductors, such as metal oxides and metal sulfides (MS X), are widely investigated as effectively catalytic materials to convert carbon dioxide (CO 2) and water into chemicals under simulated solar light. These valuable investigations might address both the energy crisis and climate change in our modern society. Herein, a novel strategy to construct leaf-like heterojunctions of V S -ZnIn 2 S 4 /TiN-x is reported. The new semiconductor heterojunctions were then applied to photoelectrocatalytic CO 2 reduction, achieving excellent performance (formate formation rate of 1173.2 μM h−1 cm−2) attributed to the plant cell-like morphology and enhanced electron mobility from the heterojunction interfaces to the active sites on the surface. Our findings suggest that titanium nitride (TiN) with good conductivity can improve the photoelectrocatalytic ability of MS X through heterojunction construction. The photocathode V S -ZnIn 2 S 4 /TiN-3 exhibits 81.0 % selectivity toward C2 products by optimizing the material structure and reaction conditions. According to the systematic investigation of operando Fourier transform infrared (FTIR) spectra, common intermediates such as *COO−, *COOH, * C O, *CHO, *COCHO, and *COCH 3 reported in the literature were carefully verified. Among these, the carbene specie serve as the key intermediate responsible for generating other intermediates and resulting in all products. [ABSTRACT FROM AUTHOR]

Abstract This review aims to provide a comprehensive overview of the development and current understanding of GaAs and InAs heterostructures, with a special emphasis on achieving high material quality and high-mobility two-dimensional electron gases (2DEGs). The review discusses the evolution of structural designs that have significantly contributed to the enhancement of electron mobility, highlighting the critical considerations of scattering mechanisms of the 2DEGs. In addition, this review examines the substantial contributions of Molecular Beam Epitaxy (MBE) to these developments, particularly through advancements in vacuum technology, source material purification, and precision control of growth conditions. The intent of this review is to serve as a useful reference for researchers and practitioners in the field, offering insights into the historical progression and technical details of these semiconductor systems.

This study uses density functional theory to investigate boron nitride nanoclusters functionalized with amino acids for enhanced binding of bisphenols A (BPA) and Z (BPZ) to mimic the estrogen-related receptor gamma. Three categories of nanoclusters were examined: pristine B12N12, and those which were germanium-doped for boron or nitrogen. The study reveals that hydrogen bonding patterns and molecular stability are significantly influenced by the type of functional group and the specific amino acids involved. Ge-doping generally enhances the binding stability and spontaneity of the nanocluster–amino acid–bisphenol complexes, with Glu 275 emerging as the most stable binding site. The analysis of electronic properties such as energy gap, ionization potential, electron affinity, and chemical hardness before and after bisphenol binding indicates a general trend of increased reactivity, particularly in Ge-doped nanoclusters. The findings highlight the potential of these nanocluster composites in applications requiring high reactivity and electron mobility, such as pollutant removal and drug delivery. [ABSTRACT FROM AUTHOR]

This study investigates the design of MOD-FETs (modulation-doped field effect transistors) using β-Ga2O3 as the substrate material. The main focus is on understanding the impact of self-heating on the alteration of mobility of electrons profile. This paper introduces a model that takes into account the influence on temperature and doping on the electron mobility in β-Ga2O3. Furthermore, it offers estimations for the conductivity of heat of β-Ga2O3, considering the influence of temperature and crystalline orientation. Furthermore, we showcase a practical example of modulation-doped β-(AlxGa1-x)2O3/Ga2O3 using a tri-metal FET where the energy level difference between the conduction bands and the presence of undesired channels in the barrier layer determines the maximum sheet carrier density in this structure. These channels enable the transfer of electrons from both the bottom and upper portions of the β-Ga2O3 quantum well. Using modulation doping, the proposed structure exhibited an ultimate current drain of 250 mA/m, a peak conductivity of 40 ms/m, and a potential of 10.0 V at ambient temperature. The electrical characteristics of the TMG device were evaluated by comparing it to the double-metal gate (DMG) device using the Atlas Silvaco TCAD simulation for analysis of performance. The results indicate that, the suggested device exhibits greater efficiency in terms of conductivity, current gain cut-off frequency, and energy gain cut-off frequency as compared to DMG transistors. The measured electric field in this example is a consequence of using a Tri-Metal Gate architecture (TMG) to regulate the channel. The designed setup achieves peak frequency of 45.5/50.5 gigahertz with a gate length of 0.2 mm. This discovery highlights the potential of using the β-(AlxGa1−x)2O3/Ga2O3 with tri-metal FET architecture as a promising method for high-power radio frequency operations. [ABSTRACT FROM AUTHOR]

Due to the negative environmental impact, the usage of lead in perovskite solar cells has been a matter of concern. Moreover, a suitable replacement of Pb with similar optoelectrical properties is hard to find. MAPbI3 is the most common material that has been studied for solar PV applications. Compared to MAPbI3, Cs2TiBr6 and MASnI3 have been less studied. In this study, their potential in solar cell applications has been investigated. Titanium and tin are two materials that have been used in numerous studies as an alternative to Pb-based perovskite. However, the lack of optimization and combinations of electron transport layer (ETL) and hole transport layer (HTL) material choices leave a lot to be desired. In this study, two different perovskite absorber layers, Cs2TiBr6 and MASnI3, have been simulated, optimized, and compared with Pb-based MAPbI3, where La-doped BaSnO3 is used as ETL and CuSbS2 as HTL in identical cell architectures. La-doped BaSnO3 is well known for its high electron mobility and excellent optical properties, which makes it an ideal candidate for ETL. On the other hand, CuSbS2 has appropriate band alignment with perovskite materials and has a high absorption profile to be used as HTL. The simulations were analyzed by optimizing key parameters like absorber layer thickness, defect density, and temperature. The optimized device architecture reached the power conversion efficiencies (PCE) of 29.45% for MASnI3, followed by MAPbI3 (22.47%) and Cs2TiBr6 (21.96%). The result indicates that high performance lead-free perovskite cells are very much possible through proper material selection and optimization. [ABSTRACT FROM AUTHOR]

Photodetectors converting light into electrical signals are crucial in various applications. The pursuit of high-performance photodetectors with high sensitivity and broad spectral range simultaneously has always been challenging in conventional semiconductor materials. Graphene, with its zero bandgap and high electron mobility, is an attractive candidate, but its low light absorption coefficient restricts its practical application in light detection. Integrating graphene with light-absorbing materials like PbS quantum dots (QDs) can potentially enhance its photodetection capabilities. Here, this work presents a broadband photodetector with enhanced sensitivity based on a graphene–PbS QD heterostructure. The device leverages the high carrier mobility of graphene and the strong light absorption of PbS QDs, achieving a wide detection range from ultraviolet to near-infrared. Employing a simple spinning method, the heterostructure demonstrates ultrahigh responsivity up to the order of 107 A/W and a specific detectivity on the order of 1013 Jones, showcasing significant potential for photoelectric applications. [ABSTRACT FROM AUTHOR]

We designed and synthesized new indolocarbazole-triazine derivatives, 9-di-tert-butyl-5,7-bis(4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-5,7-dihydroindolo[2,3-b]carbazole (2TRZ-P-ICz) and 3,9-di-tert-butyl-5,7-bis(5′-(4,6-diphenyl-1,3,5-triazin-2-yl)-[1,1′:3′,1″-terphenyl]-2′-yl)-5,7-dihydroindolo[2,3-b]carbazole (2TRZ-TP-ICz), as new bipolar host materials for red phosphorescent OLEDs. In the film state, 2TRZ-P-ICz and 2TRZ-TP-ICz exhibited photoluminescence maxima at 480 nm and 488 nm, respectively. The dipole moment characteristics of the new compounds under various solvent conditions were investigated using the Lippert–Mataga equation. The results showed that the dipole moment of 2TRZ-P-ICz is 26.9D, while that of 2TRZ-TP-ICz is 21.3D. The delayed fluorescence lifetimes were 0.188 μs for 2TRZ-P-ICz and 2.080 μs for 2TRZ-TP-ICz, with 2TRZ-TP-ICz showing TADF characteristics. Additionally, 2TRZ-TP-ICz was found to have a ΔEST of less than 0.2 eV. The triplet energy levels of the newly synthesized bipolar host materials were found to be 2.72 and 2.75 eV, confirming their suitability for use in red phosphorescent OLEDs. To investigate the carrier mobility of the synthesized materials, hole-only devices and electron-only devices were fabricated and tested. The hole mobility value at 1V was found to be 3.43 × 10−3 cm2/Vs for 2TRZ-P-ICz and 2.16 × 10−3 cm2/Vs for 2TRZ-TP-ICz. For electron mobility at 1V, 2TRZ-P-ICz showed a value of 4.41 × 10−9 cm2/Vs, while 2TRZ-TP-ICz exhibited a value of 9.13 × 10−9 cm2/Vs. As a result, when the new material was used as a host in red phosphorescent OLEDs, 2TRZ-TP-ICz achieved a current efficiency of 9.92 cd/A, an external quantum efficiency of 13.7%, CIE coordinates of (0.679, 0.319), and an electroluminescence maximum wavelength of 626 nm. [ABSTRACT FROM AUTHOR]

For semiconducting two-dimensional transition metal dichalcogenides (TMDs), the carrier transport properties of the material are affected by strain engineering. In this study, we investigate the carrier mobility of monolayer hafnium disulphide (HfS2) under different biaxial strains by first-principles calculations combined with the Kubo–Greenwood mobility approach and the compact band model. The decrease/increase in the effective mass of the conduction band (CB) of monolayer HfS2 caused by biaxial tensile/compressive strain is the major reason for the enhancement/degradation of its electron mobility. The lower hole effective mass of the valence bands (VB) in monolayer HfS2 under biaxial compressive strain improves its hole transport performance compared to that under biaxial tensile strain. In summary, biaxial compressive strain causes a decrease in both the effective mass and phonon scattering rate of monolayer HfS2, resulting in an increase in its carrier mobility. Under the biaxial compressive strain reaches 4%, the electron mobility enhancement ratio of the CB of monolayer HfS2 is ~90%. For the VB of monolayer HfS2, the maximum hole mobility enhancement ratio appears to be ~13% at a biaxial compressive strain of 4%. Our results indicate that the carrier transport performance of monolayer HfS2 can be greatly improved by strain engineering. [ABSTRACT FROM AUTHOR]

Interfacial engineering is of great concern in photovoltaic devices. Metal halide perovskite solar cells (PSCs) have garnered much attention due to their impressive development in power conversion efficiencies (PCEs). Benefiting from high electron mobility and good energy-level alignment with perovskite, aqueous SnO2 as an electron transport layer has been widely used in n-i-p perovskite solar cells. However, the interfacial engineering of an aqueous SnO2 layer on PSCs is still an obscure and confusing process. Herein, we proposed the preparation of n-i-p perovskite solar cells with different concentrations of SnO2 as electron transport layers and achieved optimized PCE with an efficiency of 20.27%. I Interfacial engineering with regard to the SnO2 layer is investigated by observing the surface morphology, space charge-limited current (SCLC) with the use of an electron-only device, and time-resolved photoluminescence (TRPL) of perovskite films. [ABSTRACT FROM AUTHOR]

White light‐emitting diodes (WLEDs) with high color‐rendering index (CRI, >90) are important for backlight displays and solid‐state lighting applications. Although the well‐developed colloidal quantum dots (QDs) based on heavy metals such as cadmium and lead are promising candidates for WLEDs, the low CRI still remains a significant limitation. In addition, the severe toxicity of heavy metals greatly limits their widespread use. Herein, the study demonstrates low‐cost and environmentally friendly carbon quantum dots (CQDs)‐based WLEDs that exhibit a high CRI of 94.33, surpassing that of conventional cadmium/lead‐containing QD‐based WLEDs. This achievement is attained through the employment of a binary host‐induced exciplex strategy. The high hole/electron mobility and suitable energy levels of the donor and acceptor give rise to a broadband orange–yellow emission stemming from the exciplex. As the host, the binary exciplex is capable of contributing blue and orange–yellow emission components while efficiently mitigating the aggregation‐induced quenching of CQDs. Meanwhile, CQDs effectively address the deep‐red emission gap, enabling the realization of CQDs‐based WLEDs with high CRI. These WLEDs also exhibit a remarkably low turn‐on voltage of 2.8 V, a maximum luminance exceeding 2000 cd m−2, a correlated color temperature of 4976 K, and Commission Internationale de l'Eclairage coordinates of (0.34, 0.32). [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) semiconductors have attracted much attention regarding their use in flexible electronic and optoelectronic devices, but the inherent poor electron mobility in conventional 2D materials severely restricts their applications. Using first-principles calculations in conjunction with Boltzmann transport theory, we systematically investigated the Si-doped 2D β-Ga2O3 structure mediated by biaxial strain, where the structural stabilities were determined by formation energy, phonon spectrum, and ab initio molecular dynamic simulation. Initially, the band gap values of Si-doped 2D β-Ga2O3 increased slightly, followed by a rapid decrease from 2.46 eV to 1.38 eV accompanied by strain modulations from −8% compressive to +8% tensile, which can be ascribed to the bigger energy elevation of the σ* anti-bonding in the conduction band minimum than that of the π bonding in the valence band maximum. Additionally, band structure calculations resolved a direct-to-indirect transition under the tensile strains. Furthermore, a significantly high electron mobility up to 4911.18 cm2 V−1 s−1 was discovered in Si-doped 2D β-Ga2O3 as the biaxial tensile strain approached 8%, which originated mainly from the decreased quantum confinement effect on the surface. The electrical conductivity was elevated with the increase in tensile strain and the enhancement of temperature from 300 K to 800 K. Our studies demonstrate the tunable electron mobilities and band structures of Si-doped 2D β-Ga2O3 using biaxial strain and shed light on its great potential in nanoscale electronics. [ABSTRACT FROM AUTHOR]

Semiconducting two-dimensional materials have gained significant attention in the field of electronics due to their exotic physical properties. In this study, multilayer WS2 films were achieved by employing a layer-by-layer wet transfer method from monolayer WS2 films synthesized through chemical vapor deposition. Analysis of photoluminescence and Raman spectra indicated a weak interaction between layers in the multilayer WS2 films. The electron mobility of WS2—based field effect transistors was significantly affected by the number of layers, with trilayer films exhibiting the highest mobility. Moreover, the FETs exhibited operational ability in ambient conditions, showing enhanced performance when utilizing HfO2 as the capping layer. Our findings provide a feasible way to achieve multilayer WS2 for high-performance FETs. [ABSTRACT FROM AUTHOR]

This study demonstrates a significant enhancement in the performance of thin-film transistors (TFTs) in terms of stability and mobility by combining indium–tungsten oxide (IWO) and zinc oxide (ZnO). IWO/ZnO heterojunction structures were fabricated with different channel thickness ratios and annealing environments. The IWO (5 nm)/ZnO (45 nm) TFT, annealed in O2 ambient, exhibited a high mobility of 26.28 cm2/V·s and a maximum drain current of 1.54 μA at a drain voltage of 10 V, outperforming the single-channel ZnO TFT, with values of 3.8 cm2/V·s and 28.08 nA. This mobility enhancement is attributed to the formation of potential wells at the IWO/ZnO junction, resulting in charge accumulation and improved percolation conduction. The engineered heterojunction channel demonstrated superior stability under positive and negative gate bias stresses compared to the single ZnO channel. The analysis of O 1s spectra showed OI, OII, and OIII peaks, confirming the theoretical mechanism. A bias temperature stress test revealed superior charge-trapping time characteristics at temperatures of 25, 55, and 85 °C compared with the single ZnO channel. The proposed IWO/ZnO heterojunction channel overcomes the limitations of the single ZnO channel and presents an attractive approach for developing TFT-based devices having excellent stability and enhanced mobility. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) Ga2O3 has been of particular interest recently since it exhibits overwhelming superiority over bulk β-Ga2O3; however, efforts to modify the carriers of 2D Ga2O3 are few both theoretically and experimentally. In this work, we study the biaxial strain mediated electronic structures and transport properties of Ge-doped 2D Ga2O3 using first-principles calculations with Perdew–Burke–Ernzerhof functional and Boltzmann transport theory. The Ge-doped Ga2O3 shows excellent structure stability as suggested by its low formation energy of −3.99 eV, as well as phonon dispersion analysis and ab initio molecular dynamic simulation. The bandgap values of Ge-doped 2D Ga2O3 are tunable from 2.37 to 1.30 eV using biaxial strain from −8% compressive to +8% tensile because of the changeable σ* anti-bonding and π bonding states in the conduction band minimum and valence band maximum, respectively, as well as the decreased quantum confinement effect. Importantly, an ultra-high electron mobility up to 6893.43 cm2 V−1 s−1 is predicated in Ge-doped 2D Ga2O3 as the biaxial tensile strain approaches 8%. Our work highlights the enormous potential of Ge-doped 2D Ga2O3 in nanoscale electronics and suggests that Ge is an excellent dopant candidate toward optoelectronic applications. [ABSTRACT FROM AUTHOR]

The growth of layered 2D compounds is a key ingredient in finding new phenomena in quantum materials, optoelectronics, and energy conversion. Here, we report SnP2Se6, a van der Waals chiral (R3 space group) semiconductor with an indirect bandgap of 1.36 to 1.41 electron volts. Exfoliated SnP2Se6 flakes are integrated into high-performance field-effect transistors with electron mobilities >100 cm2/Vs and on/off ratios >106 at room temperature. Upon excitation at a wavelength of 515.6 nanometer, SnP2Se6 phototransistors show high gain (>4 × 104) at low intensity (≈10-6 W/cm2) and fast photoresponse (< 5 microsecond) with concurrent gain of ≈52.9 at high intensity (≈56.6 mW/cm2) at a gate voltage of 60 V across 300-nm-thick SiO2 dielectric layer. The combination of high carrier mobility and the non-centrosymmetric crystal structure results in a strong intrinsic bulk photovoltaic effect; under local excitation at normal incidence at 532 nm, short circuit currents exceed 8 mA/cm2 at 20.6 W/cm2. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) Ga2O3 has been of particular interest recently since it exhibits overwhelming superiority over bulk β-Ga2O3; however, efforts to modify the carriers of 2D Ga2O3 are few both theoretically and experimentally. In this work, we study the biaxial strain mediated electronic structures and transport properties of Ge-doped 2D Ga2O3 using first-principles calculations with Perdew–Burke–Ernzerhof functional and Boltzmann transport theory. The Ge-doped Ga2O3 shows excellent structure stability as suggested by its low formation energy of −3.99 eV, as well as phonon dispersion analysis and ab initio molecular dynamic simulation. The bandgap values of Ge-doped 2D Ga2O3 are tunable from 2.37 to 1.30 eV using biaxial strain from −8% compressive to +8% tensile because of the changeable σ* anti-bonding and π bonding states in the conduction band minimum and valence band maximum, respectively, as well as the decreased quantum confinement effect. Importantly, an ultra-high electron mobility up to 6893.43 cm2 V−1 s−1 is predicated in Ge-doped 2D Ga2O3 as the biaxial tensile strain approaches 8%. Our work highlights the enormous potential of Ge-doped 2D Ga2O3 in nanoscale electronics and suggests that Ge is an excellent dopant candidate toward optoelectronic applications. [ABSTRACT FROM AUTHOR]

High-k gate dielectrics have attracted a great deal of attention in the investigation of transistors due to their unique properties such as superior gate controllability. However, their integration into graphene field-effect transistors (GFETs) remains problematic and the physical mechanisms governing the performance of these devices are still not fully understood. In this study, the effects of post-annealing on GFETs utilizing the high-k HfLaO ternary oxide as the gate dielectric were comprehensively investigated. The HfLaO film was deposited on top of graphene by magnetron sputtering, and the device performance with various post-annealing temperatures was conducted. It was found that post-annealing temperature can effectively increase the dielectric constant through balancing the oxygen-vacancy defects and moisture absorption. Both the surface morphology of HfLaO and performance of GFETs were investigated, and the fabricated GFETs exhibit notable electrical performance enhancements. Specifically, GFETs with a 200 °C post-annealed HfLaO gate dielectric demonstrate the optimal device performance, featuring a minimal Dirac point voltage (VDirac) of 1.1 V and a minimal hysteresis (ΔVDirac) of 0.5 V. The extracted hole and electron mobilities are 4012 and 1366 cm2/V · s, respectively, nearly one order of magnitude higher than that of GFETs with as-deposited HfLaO. This work outperforms other existing GFETs utilizing high-k gate dielectric and chemical vapor deposition grown graphene in terms of both carrier mobility and on–off ratio. It is also noted that the excessive post-annealing temperature can negatively impact the GFET performance through introducing oxygen vacancies, increasing the surface roughness, lowering the breakdown voltage, and inducing recrystallization. [ABSTRACT FROM AUTHOR]

This review aims to provide a comprehensive overview of the development and current understanding of GaAs and InAs heterostructures, with a special emphasis on achieving high material quality and high-mobility two-dimensional electron gases (2DEGs). The review discusses the evolution of structural designs that have significantly contributed to the enhancement of electron mobility, highlighting the critical considerations of scattering mechanisms of the 2DEGs. In addition, this review examines the substantial contributions of Molecular Beam Epitaxy (MBE) to these developments, particularly through advancements in vacuum technology, source material purification, and precision control of growth conditions. The intent of this review is to serve as a useful reference for researchers and practitioners in the field, offering insights into the historical progression and technical details of these semiconductor systems. [ABSTRACT FROM AUTHOR]

This research explores a comprehensive examination of gate underlap incorporated strained channel Cylindrical Gate All Around Nanowire FET having enriched performances above the requirement of the 2 nm technology node of IRDS 2025. The device installs a combination of strain engineering based quantum well barrier system in the channel region with high-k spacers sandwiching the device underlaps and stack high-k gate-oxide. The underlaps are prone to parasitic resistance and various short channel effects (SCEs) hence, are sandwiched by HfO2 based high-k. This SCE degradations and a strong electric field in the drain-channel region is rendered controlling the leakages. The strain based Nanosystem engineering is incorporated with Type-II heterostructure band alignment inducing quantum well barrier mechanism in the ultra-thin cylindrical channel region creating an electrostatic charge centroid leading to energy band bending and splitting among the two-fold and four-fold valleys of the strained Silicon layer. This provides stupendous electron mobility instigating high current density and electron velocity in the channel. Thereby, the device is susceptible to on-current enhancement via ballistic transport of carriers and carrier confinement via succumbing of quantum charge carriers. The device transconductance, Ion, Ioff, Ion/Ioff ratio are measured and the output performance (ID-VDS) characteristics is determined providing emphatic enrichments in contrast to the existing gate all-around FETs as well as the 2 nm technology node data of IRDS 2025. Hence, the strained channel Nanowire FET device developed here is presented here as the device of the future for various digital applications, RF applications and faster switching speed. [ABSTRACT FROM AUTHOR]

n-Pentanol, a commonly used Volatile organic compounds (VOCs) in industry, is harmful to the environment security and human health. Thus, it is necessary to develop n-pentanol sensors. Herein, spherical (ZTO-S), cubic (ZTO-C) and pseudo-cubic (ZTO-PC) ZnSnO 3 were obtained by changing the ratio of solvent in hydrothermal/solvothermal process. By contrast, the ZTO-PC sensor had a high sensitivity of 135.2 to 100 ppm n-pentanol at 170 °C, a short response time of 0.8 s, and a low detection limit of 10 ppb. Meanwhile, the ZTO-PC sensor displayed superior reproducibility, good humidity resistance and excellent long-term stability. The outstanding sensing performance response of the ZTO-PC sensor is attribute to its high surface adsorbed oxygen content, fast electron mobility and good conductivity, providing abundant active sites and effective gas adsorption platform. In addition, the mechanism of the ZTO-PC sensor for n-pentanol was studied by XPS, GC-MS, and in-situ DRIFTS. After contact with ZnSnO 3 , n-pentanol was first oxidized to n-pentanal and then decomposed into CO 2 and H 2 O. This work well-designed three types of ZnSnO 3 through morphological engineering, providing a hopeful strategy for improving the gas sensitive performance. [ABSTRACT FROM AUTHOR]

[Display omitted] • 1D/2D FeP/Znln 2 S 4 was first designed by a simple in-situ growth method. • Ohm heterojunction and Zn-P bonds explain synergistic "electron pickup" mechanism. • Interfacial microenvironment modulation can enhance photocatalytic efficacy. • 80FZIS showed high activity and stability for photocatalytic hydrogen evolution. Interfacial regulation is key to photocatalytic performance, yet modulating interfacial charge transfer in heterostructures remains challenging. Herein, a novel nanoflower-like FeP/ZnIn 2 S 4 Ohm heterostructure is first designed, with Zn atoms in ZnIn 2 S 4 (ZIS) acting as potential anchoring sites around P atoms, forming liganded Zn-P bonds. Combining 1D FeP nanowires and 2D ZIS nanosheets enhances the mobility of photogenerated electrons. The synergistic chain-type "electron pickup" mechanism of the Ohm heterojunction coupled with the Zn-P bond speeds up electron transport at the interface. The Ohm heterojunction initiates an internal electric field, creating a driving force to further transfer photogenerated electrons through the Zn-P rapid electron transport channel to FeP, which acts as a reservoir for active sites to release H 2. The optimized FeP/ZIS demonstrates a remarkable H 2 evolution rate at 4.36 mmol h−1 g−1, 3.6 times that of pristine ZIS. This work provides novel insights into optimizing photocarrier dynamics via interfacial microenvironment modulation. [ABSTRACT FROM AUTHOR]

In the era of the artificial intelligence, flexible multifunctional films that combine optical transparency, electrical conductivity, and ferromagnetism are highly beneficial for many advanced applications. Herein, we fabricated a flexible magnetic transparent conductor molybdenum doped indium oxide (IMoO) thin film on a mica substrate using a pulsed laser deposition (PLD) technique. The valence states of Mo dopants were determined to be Mo4+ and Mo6+ by X-ray photoelectron spectroscopy (XPS) analysis. From the measured optical transmittance spectrum, average visible (Vis) and near-infrared (NIR) transmittance (T ave_Vis and T ave_NIR) values in IMoO film are calculated to be 85.9 % and 85.4 %, respectively. The IMoO film shows an electron mobility (μ e) of around 113 cm2 V−1 s−1 and a sheet resistance (R s) of 69 Ω. We illustrate the benefits of Mo doping, which leads to increased NIR transparency and μ e compared to commercially available tin-doped indium oxide (ITO). On the other hand, the IMoO film shows clear magnetic hysteretic behaviors at room temperature, indicating the presence of ferromagnetism. The main origin of the ferromagnetism is presumably attributed to the Mo4+ ions with an electronic configuration of 4 d2. Bending cyclic tests reveal favourable mechanical durability and bending stability in the IMoO/mica films. Our systematic investigation demonstrates that IMoO film possesses a superior optoelectronic performance beyond ITO, Mn-doped indium oxide (IMnO), and Sn-Mn-codoped indium oxide (ITMnO), substantiating the potential of the IMoO/mica film as a high-performance transparent conductive magnetic material for flexible optoelectronic and spintronic applications. [ABSTRACT FROM AUTHOR]

In this study, we fabricated deep ultraviolet (DUV) photodetectors based on perovskite thin films doped with halide materials using formamidinium bromide (FABr) and methylammonium iodide (MAI). The device was fabricated using a simple surface engineering technique by post-treating the MAPbI3 perovskite film with an FABr solution. This film acts as a light absorption layer, like a depletion layer with a p-i-n (PIN) structure, with n-type of SnO2-SDBS and p-type of spiro-OMeTAD. Adding 0.10 M MACl to the MAPbI3 precursor solution during the manufacturing process could effectively reduce the trap density compared with existing films. Films with MACl added in the two-step process can control a wide band gap and improve crystallinity. In addition, the Cl atom has a smaller atomic radius than iodine and a higher electronegativity of 3.16, which can improve phase stability, and the effect of the added Cl− increases the electron mobility of the perovskite, showing a fast response. [ABSTRACT FROM AUTHOR]

One significant aspect that affects the performance of high‐ferrite cement is the incorporation of iron (Fe) atoms and its stabilization into the cement phases. However, the influence of Fe doping on the stability of key phases, particularly on the ettringite, remains largely unexplored requiring deeper insights into the fundamental mechanisms. The present study explored the stability of Fe‐doped AFt structure based on density functional theory calculations at different Fe dosage. The obtained results showed that the stability of AFt structure decreases by increasing Fe dosage, which is in good agreement with the previous experimental observations. The incorporation of Fe into ettringite induced a series of changes in AFt structural and electronic properties. Bond order analysis underscored stronger covalent Fe–O bonds compared to Al–O, further emphasizing changes in the material's bonding network. Notably, density of states (DOS) analysis highlights the emergence of new occupied states near the Fermi level, primarily contributed by Fe and O atoms. This increased DOS, coupled with higher electron mobility, correlates with a reduction in material stability, as observed through shifts in bonding interactions and alterations in the bonding network. These findings point toward a complex interplay of factors, including altered bonding characteristics, increased electron mobility, and changes in the electronic structure, contributing to the observed instability of Fe‐doped ettringite. [ABSTRACT FROM AUTHOR]

Recently, KTaO3 (KTO)-based 5d two-dimensional electron gases (2DEGs), characterized by robust spin–orbit coupling, have emerged as promising candidates for future spintronic devices. However, the carrier mobility of KTO-based 2DEGs is typically lower than that of SrTiO3-based 2DEGs, which limits their further development. It is imperative to explore the underlying causes of diminished carrier mobility and devise strategies to augment it. In addition, the genesis of magnetism within KTO-based 2DEGs remains ambiguous. In this study, the 2DEG within the amorphous-EuTiO3/KTO (a-ETO/KTO) heterostructure demonstrates a high electron mobility of 289.1 cm2 V−1 s−1, which exhibits a significant decrease as the film growth temperatures increase. This decrease can be primarily ascribed to electron scattering by impurities, which is induced by the amplified interfacial element interdiffusion at a higher film growth temperature. In addition, the magnetism of 2DEGs for samples grown at different temperatures shows an increasing trend with growth temperatures, which is predominantly derived from the interdiffusion of Eu atoms. This study provides an in-depth analysis of the origin of magnetic ordering and reduced mobility in KTO-based 2DEGs, which will promote the further development of 2DEGs for future applications in electronic devices. [ABSTRACT FROM AUTHOR]

Abstract Fullerene derivatives are highly attractive materials in solar cells, organic thermoelectrics, and other devices. However, the intrinsic low electron mobility and electrical conductivity restrict their potential device performance, such as perovskite solar cells (PSCs). Herein, we successfully enhanced the electric properties and morphology of phenyl‐C61‐butyric acid methyl ester (PCBM) by n‐doping it with a benzimidazoline derivative, 9‐(1,3‐dimethyl‐2,3‐dihydro‐1H‐benzoimidazol‐2‐yl)‐julolidine (JLBI‐H) via a solution process. We found the n‐doping can not only improve the conductivity and optimize the band alignment but also enable the PCBM to have a constantly strong charge extraction ability in a wide temperature from 173 to 373 K, which guarantees a stable photovoltaic performance of the corresponding PSCs under a wide range of operating temperatures. With the JLBI‐H‐doped PCBM, we improved the efficiency from 17.9% to 19.8%, along with enhanced stability of the nonencapsulated devices following the aging protocol of ISOS‐D‐1.

Highlights Developing a universal strategy of the p–n homojunction engineering that could significantly boost electron mobility of electron transport layer (ETL) by two orders of magnitude. Proposing a new mechanism based on p–n homojunction to explain inhibited carrier loss at buried interface. Setting a new performance benchmark as high as 25.50% for planar perovskite solar cells employing TiO2 as ETLs.

The adjustable structures and remarkable physicochemical properties of 2D monoelemental materials, such as silicene and germanene, have attracted significant attention in recent years. They can be transformed into silicane (SiH) and germanane (GeH) through covalent functionalization via hydrogen atom termination. However, synthesizing these materials with a scalable and low‐cost fabrication process to achieve high‐quality 2D SiH and GeH poses challenges. Herein, groundbreaking 2D SiH and GeH materials with varying compositions, specifically Si0.25Ge0.75H, Si0.50Ge0.50H, and Si0.75Ge0.25H, are prepared through a simple and efficient chemical exfoliation of their Zintl phases. These 2D materials offer significant advantages, including their large surface area, high mechanical flexibility, rapid electron mobility, and defect‐rich loose‐layered structures. Among these compositions, the Si0.50Ge0.50H electrode demonstrates the highest discharge capacity, reaching up to 1059 mAh g−1 after 60 cycles at a current density of 75 mA g−1. A comprehensive ex‐situ electrochemical analysis is conducted to investigate the reaction mechanisms of lithiation/delithiation in Si0.50Ge0.50H. Subsequently, an initial assessment of the c‐Li15(SixGe1‐x)4 phase after lithiation and the a‐Si0.50Ge0.50 phase after delithiation is presented. Hence, this study contributes crucial insights into the (de)lithiation reaction mechanisms within germanane‐silicane alloys. Such understanding is pivotal for mastering promising materials that amalgamate the finest properties of silicon and germanium. [ABSTRACT FROM AUTHOR]

[Display omitted] α -Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to stabilize α -Sn allotrope, suffer from parallel conduction, restricting transport investigations and potential applications. Here, the successful MBE growth of high-quality α -Sn layers on insulating, hybrid (001) CdTe/GaAs substrates, with bulk electron mobility approaching 20000 cm2V−1s−1 is reported. The electronic properties of the samples are systematically investigated by independent complementary techniques, enabling thorough characterization of the 3D Dirac (DSM) and Weyl (WSM) semimetal phases induced by the strains and magnetic field, respectively. Magneto-optical experiments, corroborated with band structure modelling, provide an exhaustive description of the bulk states in the DSM phase. The modelled electronic structure is directly observed in angle-resolved photoemission spectroscopy, which reveals linearly dispersing bands near the Fermi level. The first detailed study of negative longitudinal magnetoresistance relates this effect to the chiral anomaly and, consequently, to the presence of WSM. Observation of the π Berry phase in Shubnikov-de Haas oscillations agrees with the topologically non-trivial nature of the investigated samples. Our findings establish α -Sn as an attractive topological material for exploring relativistic physics and future applications. [ABSTRACT FROM AUTHOR]

Perovskite solar cells (PSCs) have attracted considerable interest owing to their low processing costs and high efficiency. A crucial component of these devices is the electron transport layer (ETL), which plays a key role in extracting and transmitting light-induced electrons, modifying interfaces, and adjusting surface energy levels. This minimizes charge recombination in PSCs, a critical factor in their performance. Among the various ETL materials, titanium dioxide (TiO2) and tin dioxide (SnO2) stand out due to their excellent electron mobility, suitable band alignment, high transparency, and stability. TiO2 is widely used because of its appropriate conduction band position, easy fabrication, and favorable charge extraction properties. SnO2, on the other hand, offers higher electron mobility, better stability under UV illumination, and lower processing temperatures, making it a promising alternative. This paper summarizes the latest advancements in the research of electron transport materials, including material selection and a discussion of electron collection. Additionally, it examines doping techniques that enhance electron mobility and surface modification technologies that improve interface quality and reduce recombination. The impact of these parameters on the performance and passivation behavior of PSCs is also examined. Technological advancements in the ETL, especially those involving TiO2 and SnO2, are currently a prominent research direction for achieving high-efficiency PSCs. This review covers the current state and future directions in ETL research for PSCs, highlighting the crucial role of TiO2 and SnO2 in enhancing device performance. [ABSTRACT FROM AUTHOR]

Sodium-ion batteries (SIBs) have emerged as a promising alternative to lithium-ion batteries (LIBs) due to the abundance and low cost of sodium resources. Cathode material plays a crucial role in the performance of sodium ion batteries determining the capacity, cycling stability, and rate capability. Na3V2(PO4)3 (NVP) is a promising cathode material due to its stable three-dimensional NASICON structure, but its discharge capacity is low and its decay is serious with the increase of cycle period. We focused on modifying NVP cathode material by coating carbon and doping Nb5+ ions for synergistic electrochemical properties of carbon-coated NVP@C as a cathode material. X-ray diffraction analysis was performed to confirm the phase purity and crystal structure of the Nb5+ doped NVP material, which exhibited characteristic diffraction peaks that matched well with the NASICON structure. Nb5+-doped NVP@C@Nbx materials were prepared using the sol–gel method and characterized by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Raman and Brunauer -Emmett-Teller (BET) analysis. First-principles calculations were performed based on density functional theory. VASP and PAW methods were chosen for these calculations. GGA in the PBE framework served as the exchange-correlation functional. The results showed the NVP unit cell consisted of six NVP structural motifs, each containing octahedral VO6 and tetrahedral PO4 groups to form a polyanionomer [V2(PO4)3] along with the c-axis direction by PO4 groups, which had Na1(6b) and Na2(18e) sites. And PDOS revealed that after Nb doping, the d orbitals of the Nb atoms also contributed electrons that were concentrated near the Fermi surface. Additionally, the decrease in the effective mass after Nb doping indicated that the electrons could move more freely through the material, implying an enhancement of the electron mobility. The electrochemical properties of the Nb5+ doped NVP@C@Nb cathode material were evaluated through cyclic voltammetry (CV), galvanostatic charge-discharge tests, electrochemical impedance spectroscopy (EIS), and X-ray photoelectric spectroscopy (XPS). The results showed that NVP@C@Nb0.15 achieved an initial discharge capacity as high as 114.27 mAhg−1, with a discharge capacity of 106.38 mAhg−1 maintained after 500 cycles at 0.5C, and the retention rate of the NVP@C@Nb0.15 composite reached an impressive 90.22%. NVP@C@Nb0.15 exhibited low resistance and high capacity, enabling it to create more vacancies and modulate crystal structure, ultimately enhancing the electrochemical properties of NVP. The outstanding performance can be attributed to the Nb5+-doped carbon layer, which not only improves electronic conductivity but also shortens the diffusion length of Na+ ions and electrons, as well as reduces volume changes in electrode materials. These preliminary results suggested that the as-obtained NVP@C@Nb0.15 composite was a promising novel cathode electrode material for efficient sodium energy storage. [ABSTRACT FROM AUTHOR]

Poly(9,9-di-n-octylfluorene) (PFO) is a promising material for polymer light-emitting diodes (PLEDs) due to its advantageous properties. To enhance its electron transporting capabilities, diblock polymers were synthesized by attaching polystyrene (PSt) chains of varying lengths to one end of the PFO molecule. In a comparative study with PFO homopolymer, the diblock polymers maintained similar thermal properties, absorption spectra, and photoluminescent stability, while exhibiting slightly deeper lowest unoccupied molecular orbital (LUMO) levels and higher crystallinity. Notably, diblock polymers with shorter polystyrene blocks demonstrated higher electron mobility than the PFO homopolymer and diblock polymers with excessively long polystyrene blocks. These findings suggest that the optimal chain length of the polystyrene block is crucial for maximizing electron mobility, thus offering valuable insights for designing high-performance PLED materials. [ABSTRACT FROM AUTHOR]

Stochastic equations of the hydrodynamic theory of plasma are presented in relation to strong external fields. It is shown that the use of these stochastic equations makes it possible to obtain new theoretical solutions for plasma as a result of its heating in a strong external electric field. Theoretical solutions for the conductivity of turbulent plasma when heated in an external electric field of 100 V/cm are considered. Calculated values for the electron drift velocity, electron mobility, electron collision frequency, and the Coulomb logarithm in the region of strong electric fields are obtained. Here we consider experiments on turbulent heating of hydrogen plasma in the range of electric field strength of 100 < E < 1000. The calculated dependences of plasma conductivity are in satisfactory agreement with experimental data for heating plasma in a strong electric field. It is shown that the plasma turbulence in the region of strong electric fields E ~1000 V/cm is close to 100%. For the first time, it is confirmed that the derived dependences for collision frequency, drift velocity, and other values include the degree of turbulence of plasma, which makes it possible to correctly describe experimental data for heating plasma even with strong electric fields. In addition, it was determined that the scatter of experimental data may be associated with the variability of the function in the expression for the heat flux density. For the first time, it is shown theoretically that the experimentally determined fact of the possibility of the existence of an approximate constancy of plasma conductivity in the region E = 100–1000 V/cm can occur with an error of ~30%. The results show significant advantages of the stochastic hydrodynamic plasma theory over other methods that are not yet able to satisfactorily as well as qualitatively and quantitatively predict long-known experimental data while taking into account the degree of turbulence. [ABSTRACT FROM AUTHOR]

Layered two‐dimensional (2D) materials have garnered marvelous attention in diverse fields, including sensors, capacitors, nanocomposites and transistors, owing to their distinctive structural morphologies and superior physicochemical properties. Recently, layered quasi‐2D materials, especially layered bismuth oxyselenide (Bi2O2Se), are of particular interest, because of their different interlayer interactions from other layered 2D materials. On this basis, this material offers richer and more intriguing physics, including high electron mobility, sizeable bandgap, and remarkable thermal and chemical durability, rendering it an utterly prospective contender for use in advanced electronic and optoelectronic applications. Herein, this article reviews the recent advances related with Bi2O2Se. Initially, its structural characterization, band structure, and basic properties are briefly introduced. Further, the synthetic strategies for the preparation of Bi2O2Se are presented. Furthermore, the diverse applications of Bi2O2Se in the field of electronics and optoelectronics, photocatalytic, solar cells and sensing were summarized in detail. Ultimately, the challenges and future perspectives of Bi2O2Se are included. [ABSTRACT FROM AUTHOR]