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The report stated that the key assumption in this model is that the trap-trap distance or trap-interface distance is the dominant parameter in the conduction mechanism causing anomalous charge loss. The oxide is characterized by a single parameter, the trap density. The studies stated that failure rate calculations are possible for different oxide qualities, thicknesses and voltage. Two-trap and three-trap percolation paths can limit the failure rate.

Examination of the influence of device geometry and applied programming voltages on the performance of a split-gate flash EEPROM cell referred as high injection MOS (HIMOS) indicates that a cell area of 16.5 micro square meter exhibits ability to achieve microsecond programming with a program-gate voltage of 12 V and 5 V-only operation. The HIMOS cell exhibits a very low drain current and uses a lower power consumption during programming. Experimental studies reveal the viability of 3.3 V-only operation in 0.7-micrometer technology. The HIMOS cell can be used for embedded memory applications.

Background: We report on the safety and immunogenicity of V591, a measles vector-based SARS-CoV-2 vaccine candidate., Methods: In this multicentre, randomised, placebo-controlled, double-blind, phase 1/2 trial, healthy adults with no history of COVID-19 disease were assigned to intramuscular injection of V591 or placebo (4:1 ratio). In part 1, younger adults (18-55 years) received V591 median tissue culture infectious dose (TCID 50 )-levels of 1×10 5 or 1×10 6 or placebo, 56 days apart. In part 2, younger and older (>55 years) adults received a single dose of one of four (10 4 /10 5 /10 6 /10 7 ) or one of two (10 5 /10 6 ) V591 TCID 50 levels, respectively, or placebo., Primary Outcome: safety/tolerability. Secondary outcome: humoral immunogenicity. ClinicalTrials.gov: NCT04498247., Findings: From August-December 2020, 444 participants were screened and 263 randomised (210 V591; 53 placebo); 262 received at least one and 10 received two doses of V591 or placebo. Adverse events were experienced by 140/209 (67.0%) V591 dose-group participants and 37/53 (69.8%) placebo-group participants following injection 1; most frequent were fatigue (57 [27.3%] vs 20 [37.7%]), headache (57 [27.3%] vs 19 [35.8%]), myalgia (35 [16.7%] vs 10 [18.9%]), and injection-site pain (35 [16.7%] vs 4 [7.5%]). No deaths nor vaccine-related serious adverse events occurred. At Day 29, no anti-SARS-CoV-2 spike serum neutralising antibody and IgG-responses were identified in placebo or the three lower V591 dose-groups; responses were detected with V591 1×10 7 TCID 50 , although titres were lower than convalescent serum., Interpretation: V591 was generally well tolerated, but immunogenicity was insufficient to warrant continued development., Funding: Merck Sharp & Dohme, Corp., a subsidiary of Merck & Co., Inc., Kenilworth, NJ, USA., Competing Interests: Declaration of interests WL, RTW, LH, XC, MD, JH, JL, MMcG, KR, YT, RT, DDB, WX, KR, SAS and EL are employees of Merck Sharpe & Dohme, Corp., and division of Merck & Co., Inc., Kenilworth, NJ, USA, and may own stock or hold stock options in the Company. JRS is an employee of Merck Sharpe & Dohme, Corp. and division of Merck & Co., Inc., Kenilworth, NJ, USA, holding stocks alongside stocks in various pharmaceutical and biotechnology companies and service providers, has participated on various editorial boards and committees for Society for Industrial and Applied Mathematics and is a member and participant in committees for the International Society of Pharmacometrics. KB was an employee of Merck Sharpe & Dohme, Corp., and division of Merck & Co., Inc., Kenilworth, NJ, USA until February 2021. AA was an employee of Merck Sharpe & Dohme, Corp., and division of Merck & Co., Inc., Kenilworth, NJ, USA, until September 2021. All other authors report no conflicts of interest., (Copyright © 2022 Merck Sharp & Dohme Corp., a subsidiary of Merck & Co., Inc., Kenilworth, NJ USA, The Author(s). Published by Elsevier B.V. All rights reserved.)

Islatravir (MK-8591) is a highly potent type 1 human immunodeficiency virus (HIV-1) nucleoside reverse transcriptase translocation inhibitor with a long intracellular half-life that is in development for the prevention and treatment of HIV-1. We conducted a randomized, double-blind, placebo-controlled, phase 1 trial in adults without HIV-1 infection. Participants received islatravir or placebo subdermal implants for 12 weeks and were monitored throughout this period and after implant removal. The co-primary end points were safety and tolerability of the islatravir implant and pharmacokinetics, including concentration at day 85, of islatravir triphosphate in peripheral blood mononuclear cells (PBMCs). Secondary end points included additional pharmacokinetic parameters for islatravir triphosphate in PBMCs and the plasma pharmacokinetic profile of islatravir. Based on preclinical data, two doses were assessed: 54 mg (n = 8, two placebo) and 62 mg (n = 8, two placebo). The most frequently reported adverse events were mild-to-moderate implant-site reactions (induration, hematoma, pain). Throughout the 12-week trial, geometric mean islatravir triphosphate concentrations were above a pharmacokinetic threshold of 0.05 pmol per 10 6 PBMCs, which was estimated to provide therapeutic reverse transcriptase inhibition (concentration at day 85 (percentage of geometric coefficient of variation): 54 mg, 0.135 pmol per 10 6 cells (27.3); 62 mg, 0.272 pmol per 10 6 cells (45.2)). Islatravir implants at both doses were safe and resulted in mean concentrations above the pharmacokinetic threshold through 12 weeks, warranting further investigation of islatravir implants as a potential HIV prevention strategy., (© 2021. The Author(s), under exclusive licence to Springer Nature America, Inc.)

Light in flight was captured by a single shot of a newly developed backside-illuminated multi-collection-gate image sensor at a frame interval of 10 ns without high-speed gating devices such as a streak camera or post data processes. This paper reports the achievement and further evolution of the image sensor toward the theoretical temporal resolution limit of 11.1 ps derived by the authors. The theoretical analysis revealed the conditions to minimize the temporal resolution. Simulations show that the image sensor designed following the specified conditions and fabricated by existing technology will achieve a frame interval of 50 ps. The sensor, 200 times faster than our latest sensor will innovate advanced analytical apparatuses using time-of-flight or lifetime measurements, such as imaging TOF-MS, FLIM, pulse neutron tomography, PET, LIDAR, and more, beyond these known applications.

The paper presents an ultra-high-speed image sensor for motion pictures of reproducible events emitting very weak light. The sensor is backside-illuminated. Each pixel is equipped with multiple collection gates (MCG) at the center of the front side. Each collection gate is connected to an in-pixel large memory unit, which can accumulate image signals captured by repetitive imaging. The combination of the backside illumination, image signal accumulation, and slow readout from the in-pixel signal storage after an image capturing operation offers a very high sensitivity. Pipeline signal transfer from the the multiple collection gates (MCG) to the in-pixel memory units enables the sensor to achieve a large frame count and a very high frame rate at the same time. A test sensor was fabricated with a pixel count of 32 × 32 pixels. Each pixel is equipped with four collection gates, each connected to a memory unit with 305 elements; thus, with a total frame count of 1220 (305 × 4) frames. The test camera achieved 25 Mfps, while the sensor was designed to operate at 50 Mfps.

This work explores the benefits of linear-mode avalanche photodiodes (APDs) in high-speed CMOS imaging as compared to different approaches present in literature. Analysis of APDs biased below their breakdown voltage employed in single-photon counting mode is also discussed, showing a potentially interesting alternative to existing Geiger-mode APDs. An overview of the recently presented gated pinned avalanche photodiode pixel concept is provided, as well as the first experimental results on a 8 × 16 pixel test array. Full feasibility of the proposed pixel concept is not demonstrated; however, informative data is obtained from the sensor operating under -32 V substrate bias and clearly exhibiting wavelength-dependent gain in frontside illumination. The readout of the chip designed in standard 130 nm CMOS technology shows no dependence on the high-voltage bias. Readout noise level of 15 e - rms, full well capacity of 8000 e - , and the conversion gain of 75 µV / e - are extracted from the photon-transfer measurements. The gain characteristics of the avalanche junction are characterized on separate test diodes showing a multiplication factor of 1.6 for red light in frontside illumination.