1. High Performance Microaccelerometer with Wafer-level Hermetic Packaged Sensing Element and Continuous-time BiCMOS Interface Circuit
- Author
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Sangmin Lee, Sangjun Park, Dong-il Dan Cho, Yonghwa Park, Ahra Lee, Hyoungho Ko, Byoung-Doo Choi, Kwangho Yoo, Sang Chul Lee, Sung-Wook Kim, Jaesang Lim, and Seung-Joon Paik
- Subjects
Microelectromechanical systems ,History ,Engineering ,Bulk micromachining ,business.industry ,Transconductance ,Electrical engineering ,Silicon on insulator ,BiCMOS ,Noise (electronics) ,Computer Science Applications ,Education ,Anodic bonding ,Wafer ,business - Abstract
A microaccelerometer with highly reliable, wafer-level packaged MEMS sensing element and fully differential, continuous time, low noise, BiCMOS interface circuit is fabricated. The MEMS sensing element is fabricated on a (111)-oriented SOI wafer by using the SBM (Sacrificial/Bulk Micromachining) process. To protect the silicon structure of the sensing element and enhance the reliability, a wafer level hermetic packaging process is performed by using a silicon-glass anodic bonding process. The interface circuit is fabricated using 0.8 µm BiCMOS process. The capacitance change of the MEMS sensing element is amplified by the continuous-time, fully-differential transconductance input amplifier. A chopper-stabilization architecture is adopted to reduce low-frequency noise including 1/f noise. The fabricated microaccelerometer has the total noise equivalent acceleration of 0.89 µg/√Hz, the bias instability of 490 µg, the input range of ±10 g, and the output nonlinearity of ±0.5 %FSO.
- Published
- 2006
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