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The imperative development of a cutting-edge environmental gas sensor is essential to proficiently monitor and detect hazardous gases, ensuring comprehensive safety and awareness. Nanostructures developed from metal oxides are emerging as promising candidates for achieving superior performance in gas sensors. NO2 is one of the toxic gases that affects people as well as the environment so its detection is crucial. The present study investigates the gas sensing capability of copper oxide-based sensor for 5 ppm of NO2 gas at 100 °C. The sensing material was synthesized using a facile precipitation method and characterized by XRD, FE-SEM, UV–visible spectroscopy, photoluminescence spectroscopy, XPS and BET techniques. The developed material shows a response equal to 67.1% at optimal temperature towards 5 ppm NO2 gas. The sensor demonstrated an impressive detection limit of 300 ppb, along with a commendable percentage response of 5.2%. Under optimized conditions, the synthesized material demonstrated its high selectivity, as evidenced by the highest percentage response recorded for NO2 gas among NO2, NH3, CO, CO2 and H2S. [ABSTRACT FROM AUTHOR]

Thin films have received great attention in recent years because of their extensive applications in various fields of science and technology. The studies of the electrical properties of semiconducting thin films have been primarily provoked by attractive micro-electronic device applications. Bismuth Telluride (Bi2Te3) is the most widely used material among the various V-VI compounds. In this study, thin films of Bi2Te3 were fabricated onto different substrates (i.e., glass and silica) by using thermal evaporation technique. Their structural, morphological, optical, and electrical properties were investigated using X-ray diffraction (XRD), Field Emission-Scanning Electron Microscopy (FE-SEM), Photoluminescence (PL) spectroscopy, and Source meter instrument, respectively. XRD analysis showed that the films were crystalline in nature. FESEM images showed that the films have a homogenous and compact grain surface. The optical band gap was about 2 eV for both types of film. The I-V characteristics of thin films were analysed at temperatures ranging from 30 °C to 100 °C. It was found that the film fabricated onto silica substrates showed large electrical conductivity as compared to the others. Also, the increment in electrical conductivity was observed with the temperature indicating that the prepared films have a negative temperature coefficient of resistance. [ABSTRACT FROM AUTHOR]

Molybdenum disulfide (MoS2), the second most thoroughly investigated two-dimensional material after graphene, has attracted considerable interest in energy storage applications owing to its exceptional qualities, including its unique crystal structure, low electronegativity, and high specific capacity. In this study, we showed that a simple ball-milling procedure causes significant improvement in the capacitive properties of the bulk MoS2 (BL-MoS2). We characterized the material before and after the milling process using X-ray diffraction (XRD) and a BET surface area analyzer to find the material's structural, crystalline features, and surface area, respectively. We prepared electrodes of BL-MoS2 and ball-milled MoS2 (BM-MoS2) for electrochemical investigation. The charge storage characteristics were examined using cyclic voltammetry (CV), galvanostatic charge-discharge (GCD), and electrochemical impedance spectroscopy (EIS). The BM-MoS2 and BL-MoS2 have a specific capacitance of 114 F/g and 96 F/g, respectively. [ABSTRACT FROM AUTHOR]

Molybdenum disulfide (MoS2), the second most thoroughly investigated two-dimensional material after graphene, has attracted considerable interest in energy storage applications owing to its exceptional qualities, including its unique crystal structure, low electronegativity, and high specific capacity. In this study, we showed that a simple ball-milling procedure causes significant improvement in the capacitive properties of the bulk MoS2 (BL-MoS2). We characterized the material before and after the milling process using X-ray diffraction (XRD) and a BET surface area analyzer to find the material's structural, crystalline features, and surface area, respectively. We prepared electrodes of BL-MoS2 and ball-milled MoS2 (BM-MoS2) for electrochemical investigation. The charge storage characteristics were examined using cyclic voltammetry (CV), galvanostatic charge-discharge (GCD), and electrochemical impedance spectroscopy (EIS). The BM-MoS2 and BL-MoS2 have a specific capacitance of 114 F/g and 96 F/g, respectively. [ABSTRACT FROM AUTHOR]