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3 results on '"Jonathan Faugier-Tovar"'

1. Active optical phased array integrated within a micro-cantilever

Author

Sylvain Guerber, Daivid Fowler, Laurent Mollard, Christel Dieppedale, Gwenael Le Rhun, Antoine Hamelin, Jonathan Faugier-Tovar, and Kim Abdoul-Carime

Subjects
Engineering (General). Civil engineering (General), TA1-2040
Abstract

Abstract Three dimensional sensing is essential in order that machines may operate in and interact with complex dynamic environments. Solid-state beam scanning devices are seen as being key to achieving required system specifications in terms of sensing range, resolution, refresh rate and cost. Integrated optical phased arrays fabricated on silicon wafers are a potential solution, but demonstrated devices with system-level performance currently rely on expensive widely tunable source lasers. Here, we combine silicon nitride photonics and micro-electromechanical system technologies, demonstrating the integration of an active photonic beam-steering circuit into a piezoelectric actuated micro cantilever. An optical phased array, operating at a wavelength of 905 nm, provides output beam scanning over a range of 17° in one dimension, while the inclination of the entire circuit and consequently the angle of the output beam in a second dimension can be independently modified over a range of up to 40° using the piezoelectric actuator.

Published
2024
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2. Development, calibration and characterization of silicon photonics based optical phased arrays

Author

Daivid Fowler, Bertrand Szelag, Jonathan Faugier-Tovar, Sylvain Guerber, Ismael Charlet, Philippe Grosse, and Kim Abdoul-Carime

Subjects
Silicon photonics, Computer science, Beam steering, FOS: Physical sciences, Ranging, Applied Physics (physics.app-ph), Physics - Applied Physics, Lidar, Holographic display, Electronic engineering, Calibration, Electrical efficiency, Realization (systems), Optics (physics.optics), Physics - Optics
Abstract

Over the last decade, Optical Phased Arrays (OPA) have been extensively studied, targeting applications such as Light Detection And Ranging (LiDAR) systems, holographic displays, atmospheric monitoring and free space communications. Leveraging the maturity of the silicon photonics platform, the usual mechanical based beam steering system could be replaced by an integrated OPA; significantly reducing the cost and size of the LiDAR while improving its performance (scanning speed, power efficiency, resolution…) thanks to solid state beam steering. However, the realization of an OPA that meets the specifications of a LiDAR system (low divergence and single output beam) is not trivial. Targeting the realization of a complete LiDAR system, the technical challenges inherent to the development of high performance OPAs have been studied at CEA LETI. In particular, efficient genetic algorithms have been developed for the calibration of high channel count OPAs as well as an advanced measurement setup compatible with wafer-scale OPA characterization.

Published
2023

3. Influence of the Lattice Mismatch on the Atomic Ordering of ZnO Grown by Atomic Layer Deposition onto Single Crystal Surfaces with Variable Mismatch (InP, GaAs, GaN, SiC)

Author

Florica Lazar, Catherine Marichy, Jonathan Faugier-Tovar, Christian Brylinski, Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Ingéniérie et Science des Matériaux - EA 4695 (LISM), Université de Reims Champagne-Ardenne (URCA)-SFR Condorcet, and Université de Reims Champagne-Ardenne (URCA)-Université de Picardie Jules Verne (UPJV)-Centre National de la Recherche Scientifique (CNRS)-Université de Reims Champagne-Ardenne (URCA)-Université de Picardie Jules Verne (UPJV)-Centre National de la Recherche Scientifique (CNRS)

Subjects
atomic layer deposition, ALD, ZnO, ZnO/GaN, ZnO/SiC, hetero-interface, heterojunction, Materials science, 02 engineering and technology, Substrate (electronics), Epitaxy, 01 natural sciences, Atomic layer deposition, 0103 physical sciences, Electronic engineering, 010302 applied physics, business.industry, Heterojunction, [CHIM.MATE]Chemical Sciences/Material chemistry, Atmospheric temperature range, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Amorphous solid, Optoelectronics, Crystallite, 0210 nano-technology, business, Single crystal
Abstract

International audience; It has previously been reported that epitaxial growth of ZnO can be obtained at low temperatures by atomic layer deposition (ALD) onto a GaN (0001-Ga) surface, corresponding to a ~2.3% compressive lattice mismatch of the deposited ZnO. The question addressed here is the atomic ordering of deposited ZnO as a function of the lattice mismatch between ZnO and several single-crystal seeding surfaces. We have deposited ZnO using ALD onto either the (111) cubic or (0001) hexagonal surfaces of a set of available single-crystal substrates (GaAs, InP, GaN, SiC), for which the lattice mismatch varies over a wide range of values, positive and negative. It is found that deposition onto surfaces with very high extensive lattice mismatch (GaAs, InP) leads to polycrystalline ZnO, similar to the configuration obtained on an amorphous SiO2 surface. In contrast, ZnO ALD deposition onto both 2H-GaN (0001-Ga) and 4H-SiC (0001-Si) surfaces with lower and compressive mismatch leads to epitaxial ordering over the whole substrate temperature range of 180–250 ◦C

Published
2017
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