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Chirality is ubiquitous in nature and manifests in a wide range of phenomena including chemical reactions, biological processes, and quantum transport of electrons. In quantum materials, the chirality of fermions, given by the relative directions between the electron spin and momentum, is connected to the band topology of electronic states. Here, we show that in structurally chiral materials like CoSi, the orbital angular momentum (OAM) serves as the main driver of a nontrivial band topology in this new class of unconventional topological semimetals, even when spin-orbit coupling is negligible. A nontrivial orbital-momentum locking of multifold chiral fermions in the bulk leads to a pronounced OAM texture of the helicoid Fermi arcs at the surface. Our findings highlight the pivotal role of the orbital degree of freedom for the chirality and topology of electron states, in general, and pave the way towards the application of topological chiral semimetals in orbitronic devices.

Chiral crystals and molecules were recently predicted to form an intriguing platform for unconventional orbital physics. Here, we report the observation of chirality-driven orbital textures in the bulk electronic structure of CoSi, a prototype member of the cubic B20 family of chiral crystals. Using circular dichroism in soft X-ray angle-resolved photoemission, we demonstrate the formation of a bulk orbital-angular-momentum texture and monopole-like orbital-momentum locking that depends on crystal handedness. We introduce the intrinsic chiral circular dichroism, icCD, as a differential photoemission observable and a natural probe of chiral electron states. Our findings render chiral crystals promising for spin-orbitronics applications., Comment: To be published in Physical Review Letters

Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T-phase and vanadium 3d1 electronic configuration in monolayer VSe2 grown on graphite by molecular-beam epitaxy. Element-specific X-ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe2 as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long-range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic-scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D-TMDs in the search for exotic low-dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets.

To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are to ensure the formation of variable low resistive tunnel ferromagnetic contacts(FC), and to preserve intrinsic properties of the SC during fabrication. Large Schottky barriers lead to the formation of high resistive contacts and methods adopted to control the barriers often alter the intrinsic properties of the SC. This work aims at addressing both issues in fully encapsulated monolayer WSe$_2$ FETs by using bi-layer h-BN as a tunnel barrier at the FC/SC interface. We investigate the electrical transport in monolayer WSe$_2$ FETs with current-in-plane geometry that yields hole mobilities $\sim$ 38.3 $cm^{2}V^{-1}s^{-1}$ at 240 K and On/Off ratios of the order of 10$^7$, limited by the contact regions. We have achieved ultralow effective Schottky barrier ($\sim$ 5.34 meV) with encapsulated tunneling device as opposed to a non-encapsulated device in which the barrier heights are considerably higher. These observations provide an insight into the electrical behavior of the FC/h-BN/SC/h-BN heterostructures and such control over the barrier heights opens up the possibilities for WSe$_2$-based spintronic devices., Comment: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces \{copyright} American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/acsami.0c01025

Self-assembled molecular structures have been intensively used in molecular electronics and spintronics. However, detailed nature of the interfaces between molecular layers and extended metallic contacts used to bias the real devices remains unclear. Buried interfaces greatly restrict application of standard techniques such as Raman or scanning electron microscopies. Here we introduce low frequency noise spectroscopy as a tool to characterize buried molecular-metal interfaces. We take advantage of vibrational heating of the molecules with incomplete contacts to the interface. Electrons, being the main spin and charge carriers propagating through the interfaces involving self-assembled molecules, interact inelastically with charged atomic ions. Such interactions produce quantum molecular vibrations (phonons). Detailed investigation of both conductance and conductance fluctuations in magnetic tunnel junctions with few nm Perylenetetracarboxylic dianhydride (PTCDA) allows to map vibrational heating at specific biases taking place in 'hot spots' where self-assembled layers weaker contact the metallic electrodes. We follow this effect as a function of PTCDA thickness and find the best molecular-metal order for the lowest (3-5 monolayers) barriers. Moreover, we unveil interplay between spin and phonons at interface showing experimentally and by modelling spin-control over molecular vibrational heating. We find that vibrational heating related low frequency noise essentially depends on the relative alignment of the electrodes with noise changes well beyond expectations from fluctuation-dissipation theorem.

Scanning tunneling microscopy visualizations of quasiparticle interference (QPI) enable powerful insights into the k-space properties of superconducting, topological, Rashba and other exotic electronic phases, but their reliance on impurities acting as scattering centers is rarely scrutinized. Here we investigate QPI at the vacuum-cleaved (001) surface of the Dirac semimetal ZrSiS. We find that interference patterns around impurities located on the Zr and S lattice sites appear very different, and can be ascribed to selective scattering of different sub-sets of the predominantly Zr 4d-derived band structure, namely the m = 0 and m = +/-1 components. We show that the selectivity of scattering channels requires an explanation beyond the different bands' orbital characteristics and their respective charge density distributions over Zr and S lattices sites. Importantly, this result shows that the usual assumption of generic scattering centers allowing observations of quasiparticle interference to shed light indiscriminately and isotropically upon the \textit{q}-space of scattering events does not hold, and that the scope and interpretation of QPI observations can therefore be be strongly contingent on the material defect chemistry. This finding promises to spur new investigations into the quasiparticle scattering process itself, to inform future interpretations of quasiparticle interference observations, and ultimately to aid the understanding and engineering of quantum electronic transport properties., Comment: This version is as accepted for PRB

The Dirac semimetal phase found in Cd$_{3}$As$_{2}$ is protected by a $C_{4}$ rotational symmetry derived from a corkscrew arrangement of systematic Cd vacancies in its complicated crystal structure. It is therefore surprising that no microscopic observation, direct or indirect, of these systematic vacancies has so far been described. To this end, we revisit the cleaved (112) surface of Cd$_{3}$As$_{2}$ using a combined approach of scanning tunneling microscopy and \textit{ab initio} calculations. We determine the exact position of the (112) plane at which Cd$_{3}$As$_{2}$ naturally cleaves, and describe in detail a structural periodicity found at the reconstructed surface, consistent with that expected to arise from the systematic Cd vacancies. This reconciles the current state of microscopic surface observations with those of crystallographic and theoretical models, and demonstrates that this vacancy superstructure, central to the preservation of the Dirac semimetal phase, survives the cleavage process and retains order at the surface., Comment: Supplemental Material included. 16 pages, 7 figures

Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here we investigate conductance and shot noise in magnetic tunnel junctions with PTCDA barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10 and 40\%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5-2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunneling through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.