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Electrodynamic interactions between biomolecules are of potential biological interest for signaling warranting investigation of their activation through various mechanisms in living systems. Here, using as model system a light harvesting protein within the phycobilisome antenna system of red algae, we proved that not only light exposure but also thermal energy alone can trigger attractive electrodynamic interactions up to hundreds of nanometer. The latter are sustained by low frequency collective modes and while the second mode appears only upon illumination, the fundamental one can be activated by temperature alone. Activation of such collective modes and ED interactions might influence conformational rearrangements and energy transport within the phycobilisome antenna system. This is a paradigm-shift that underscores the immense potential of biological systems in exploiting different forms of input energy to achieve optimal energy transfer.

This paper presents a study on performance optimization and resonant frequency modification of terahertz detectors by the use of hyper-hemispherical silicon superstrate lenses. The detectors are patch-TeraFETs, i.e., field-effect transistors with monolithically integrated patch antennas fabricated with a commercial 65-nm CMOS foundry process and designed for an operation frequency of 580 GHz. We demonstrate a strong improvement of the optical noise-equivalent power optical NEP, referenced against the total radiation power) reaching a value of 16 pW/Hz^(1/2). We show, furthermore, that the resonance frequency can be efficiently fine-tuned by the choice of the material and the thickness of a dielectric layer placed between the transistor and the superstrate lens. The resonance frequency can be shifted by more than 15 % of the center frequency (up to 100 GHz for the 580 GHz devices). The design of the on-chip optics can be employed for post-fabrication tailoring of the detector's resonance frequency to target specific spectral positions., Comment: 11 pages, 7 figures

Monolithically integrated, antenna-coupled field-effect transistors (TeraFETs) are rapid and sensitive detectors for the terahertz range (0.3-10~THz) that can operate at room temperature. We conducted experimental characterizations of a single patch-antenna coupled TeraFET optimized for 3.4~THz operation and its integration into an 8x8 multi-element detector configuration. In this configuration, the entire TeraFET array operates as a unified detector element, combining the output signals of all detector elements. Both detectors were realized using a mature commercial Si-CMOS 65-nm process node. Our experimental characterization employed single-mode Quantum-Cascade Lasers (QCLs) emitting at 2.85~THz and 3.4~THz. The 8x8 multi-element detector yields two major improvements for sensitive power detection experiments. First, the larger detector area simplifies alignment and enhances signal stability. Second, the reduced detector impedance enabled the implementation of a TeraFET+QCL system capable of providing a -3~dB modulation bandwidth up to 21~MHz, which is currently limited primarily by the chosen readout circuitry. Finally, we validate the system's performance by providing high resolution gas spectroscopy data for methanol vapor around 3.4~THz, where a detection limit of 1.6e-5 absorbance, or 2.6e11~molecules/cm^3 was estimated under optimal coupling conditions., Comment: accepted for publication in IEEE Transactions on Terahertz Science and Technology

We report on the modeling and experimental characterization of Si CMOS detectors of terahertz radiation based on antenna-coupled field-effect transistors (TeraFETs). The detectors are manufactured using TSMC's 65-nm technology. We apply two models -- the TSMC RF foundry model and our own ADS-HDM -- to simulate the Si CMOS TeraFET performance and compare their predictions with respective experimental data. Both models are implemented in the commercial circuit simulation software Keysight Advanced Design System (ADS). We find that the compact model TSMC RF is capable to predict the detector responsivity and its dependence on frequency and gate voltage with good accuracy up to the highest frequency of 1.2 THz covered in this study. This frequency is well beyond the tool's intended operation range for 5G communications and 110-GHz millimeter wave applications. We demonstrate that our self-developed physics-based ADS-HDM tool, which relies on an extended one-dimensional hydrodynamic transport model and can be adapted readily to other material technologies, has high predictive qualities comparable to those of the foundry model. We use the ADS-HDM to discuss the contribution of diffusive and plasmonic effects to the THz response of Si CMOS TeraFETs, finding that these effects, while becoming more significant with rising frequency, are never dominant. Finally, we estimate that the electrical NEP (perfect power coupling conditions) is on the order of 5 pW/$\sqrt{\rm{Hz}}$ at room-temperature.

The art of light engineering unveils a world of possibilities through the meticulous manipulation of photonic properties such as intensity, phase, and polarization. The precise control over these optical properties under various conditions finds application in fields spanning communication, light-matter interactions, laser direct writing, and imaging, enriching our technological landscape. In this study, we embark on a journey to establish a rational framework for the design and assembly of nonparaxial THz imaging systems. Our focus centers on a lensless photonic system composed solely of flat-silicon diffractive optics. These elements include the high-resistivity silicon-based nonparaxial Fresnel zone plate, the Fibonacci lens, the Bessel axicon, and the Airy zone plate, all meticulously crafted using laser ablation technology. A systematic exploration of these flat elements in various combinations sheds light on their strengths and weaknesses. Our endeavor extends to the practical application of these optical components, where they illuminate samples and capture the light scattered from these raster-scanned samples using single-pixel detectors. Through a comprehensive examination, we evaluate imaging systems across diverse metrics that include contrast, resolution, depth of field and focus. This multifaceted approach allows us to distill rational design principles for the optimal assembly of THz imaging setups. The findings of this research chart an exciting course toward the development of compact, user-friendly THz imaging systems where sensors and passive optical elements seamlessly integrate into a single chip. These innovations not only enhance capabilities in THz imaging but also pave the way for novel applications, ushering in a new encouraging era of advanced THz photonic technology., Comment: 26 pages

Terahertz coloured digital holography ranging from 1.39 THz up to 4.25 THz is demonstrated. It is shown that it can be applied for the investigation of low-absorbing objects, and it is illustrated via inspection of stacked graphene layers placed on high-resistivity silicon substrate. Holograms are recorded using an optically-pumped molecular THz laser operating at discrete emission lines of 1.39 THz, 2.52 THz, 3.11 THz, and 4.25 THz frequencies and it unveiled that phase-shifting methods allow to qualitatively reconstruct coloured THz holograms with improved quality achieved by removing unwanted information related with so-called DC term and conjugated beam forming virtual image., Comment: Submitted to "Scientific Reports" on 30th June 2023

Fourier imaging is an indirect imaging method which records the diffraction pattern of the object scene coherently in the focal plane of the imaging system and reconstructs the image using computational resources. The spatial resolution, which can be reached, depends on one hand on the wavelength of the radiation, but also on the capability to measure - in the focal plane - Fourier components with high spatial wave-vectors. This leads to a conflicting situation at THz frequencies, because choosing a shorter wavelength for better resolution usually comes at the cost of less radiation power, concomitant with a loss of dynamic range, which limits the detection of higher Fourier components. Here, aiming at maintaining a high dynamic range and limiting the system costs, we adopt heterodyne detection at the 2nd sub-harmonic, working with continuous-wave (CW) radiation for object illumination at 600 GHz and local-oscillator (LO) radiation at 300 GHz. The detector is a single-pixel broad-band Si CMOS TeraFET equipped with substrate lenses on both the front- and backside for separate in-coupling of the waves. The entire scene is illuminated by the object wave, and the Fourier spectrum is recorded by raster scanning of the single detector unit through the focal plane. With only 56 uW of power of the 600-GHz radiation, a dynamic range of 60 dB is reached, sufficient to detect the entire accessible Fourier space spectrum in the test measurements. A lateral spatial resolution of better than 0.5 mm, at the diffraction limit, is reached.