Search

La0.7Sr0.3MnO3, a strong semi-metallic ferromagnet having robust spin polarization and magnetic transition temperature (TC) well above 300 K, has attracted significant attention as a possible candidate for a wide range of memory, spintronic, and multifunctional devices. Since varying the oxygen partial pressure during growth is likely to change the structural and other physical functionalities of La0.7Sr0.3MnO3 (LSMO) films, here we report detailed investigations on structure, along with magnetic behavior of LSMO films with same thickness (~30 nm) but synthesized at various oxygen partial pressures: 10, 30, 50, 100, 150, 200 and 250 mTorr. The observation of only (00 l) reflections without any secondary peaks in the XRD patterns confirms the high-quality synthesis of the above-mentioned films. Surface morphology of the films reveals that these films are very smooth with low roughness, the thin films synthesized at 150 mTorr having the lowest average roughness. The increasing of magnetic TC and sharpness of the magnetic phase transitions with increasing oxygen growth pressure suggests that by decreasing the oxygen growth pressure leads to oxygen deficiencies in grown films which induce oxygen inhomogeneity. Thin films grown at 150 mTorr exhibits the highest magnetization with TC = 340 K as these thin films possess the lowest roughness and might exhibit lowest oxygen vacancies and defects. Interpretation and significance of these results in the 30 nm LSMO thin films prepared at different oxygen growth pressures are also presented, along with the existence and growth pressure dependence of negative remanent magnetization (NRM) of the above-mentioned thin films.

The properties of many materials can be strongly affected by the atomic valence of the contained individual elements, which may vary at surfaces and other interfaces. These variations can have a critical impact on material performance in applications. A non-destructive method for the determination of layer-by-layer atomic valence as a function of material thickness is presented for La0.7Sr0.3MnO3 (LSMO) thin films. The method utilizes a combination of bulk- and surface-sensitive X-ray absorption spectroscopy (XAS) detection modes; here, the modes are fluorescence yield and surface-sensitive total electron yield. The weighted-average Mn atomic valence as measured from the two modes are simultaneously fitted using a model for the layer-by-layer variation of valence based on theoretical model Hamiltonian calculations. Using this model, the Mn valence profile in LSMO thin film is extracted and the valence within each layer is determined to within an uncertainty of a few percent. The approach presented here could be used to study the layer-dependent valence in other systems or extended to different properties of materials such as magnetism.

La0.7Sr0.3MnO3, a strong semi-metallic ferromagnet having robust spin polarization and magnetic transition temperature (TC) well above 300 K, has attracted significant attention as a possible candidate for a wide range of memory, spintronic, and multifunctional devices. Since varying the oxygen partial pressure during growth is likely to change the structural and other physical functionalities of La0.7Sr0.3MnO3 (LSMO) films, here we report detailed investigations on structure, along with magnetic behavior of LSMO films with same thickness (~30 nm) but synthesized at various oxygen partial pressures: 10, 30, 50, 100, 150, 200 and 250 mTorr. The observation of only (00 l) reflections without any secondary peaks in the XRD patterns confirms the high-quality synthesis of the above-mentioned films. Surface morphology of the films reveals that these films are very smooth with low roughness, the thin films synthesized at 150 mTorr having the lowest average roughness. The increasing of magnetic TC and sharpness of the magnetic phase transitions with increasing oxygen growth pressure suggests that by decreasing the oxygen growth pressure leads to oxygen deficiencies in grown films which induce oxygen inhomogeneity. Thin films grown at 150 mTorr exhibits the highest magnetization with TC = 340 K as these thin films possess the lowest roughness and might exhibit lowest oxygen vacancies and defects. Interpretation and significance of these results in the 30 nm LSMO thin films prepared at different oxygen growth pressures are also presented, along with the existence and growth pressure dependence of negative remanent magnetization (NRM) of the above-mentioned thin films.

We have studied the atomic force microscopy (AFM), X-ray Bragg reflections, X-ray absorption spectra (XAS) of the Pd L-edge, Scanning electron microscopey (SEM) and Raman spectra, and direct magnetoelectric tensor of Pd-substituted lead titanate and lead zirconate-titanate. A primary aim is to determine the percentage of Pd+4 and Pd+2 substitutional at the Ti-sites (we find that it is almost fully substitutional). The atomic force microscopy data uniquely reveal a surprise: both threefold vertical (polarized out-of-plane) and fourfold in-plane domain vertices. This is discussed in terms of the general rules for Voronoi patterns (Dirichlet tessellations) in two and three dimensions. At high pressures Raman soft modes are observed, as in pure lead titanate, and X-ray diffraction (XRD) indicates a nearly second-order displacive phase transition. However, two or three transitions are involved: First, there are anomalies in c/a ratio and Raman spectra at low pressures (P = 1 − 2 GPa); and second, the c/a ratio reaches unity at ca. P = 10 GPa, where a monoclinic (Mc) but metrically cubic transition occurs from the ambient tetragonal P4 mm structure in pure PbTiO3; whereas the Raman lines (forbidden in the cubic phase) remain until ca. 17 GPa, where a monoclinic-cubic transition is known in lead titanate., Scientific Reports, 9 (1), ISSN:2045-2322

We report a detailed investigation on magnetic and electrical properties of the multiferroic GaFeO3 (GFO) thin films grown on SrRuO3 (SRO) buffered SrTiO3 (1 1 1) substrates. The magnetic transition temperature (Tc) of GFO thin films is observed ∼240 K, which is higher by 20 K than in GFO ceramic. The clear and reversible out-of-plane phase-contrast seen in the Piezoresponse Force Microscopy (PFM) phase and amplitude images measured within positive and negative poling confirms the polarization reorientation and hence piezoelectric nature of the compound. The temperature and frequency dependence of permittivity studies demonstrates the relaxor behavior of these thin films. The observed near room temperature (RT) magnetic phase transition with RT piezoelectric nature of these thin films elucidates the possible potential candidates for a multiferroic world with spintronics device applications.

Magnetocaloric studies reported here on a 7.6 nm thin film of La 0 . 7 Sr 0 . 3 MnO 3 grown on SrTiO 3 substrate show that the film is magnetically inhomogeneous since the - ∆ S M (magnetic entropy change) vs. temperature data has two broad peaks, one centered near T ∼ 220 K and the other centered near T ∼ 270 K. Combining these results with magnetic studies show that T B ∼ 220 K represents the blocking temperature of spin clusters present in the surface layer whereas the rest of the film has ferromagnetic to paramagnetic transition at the Curie temperature TC ∼290 K. Detailed analysis of - ∆ S M (T, H) vs. T data is used to determine the volume fraction of the superparamagnetic (SPM) to ferromagnetic (FM) phases to be ∼ 17% to ∼ 83% at 4 kOe. The dependence of the RCP (relative cooling power) and the volume fraction of SPM and FM phases on the applied magnetic field up to H = 4 kOe is evaluated by fitting the - ∆ S M vs. T data to two Gaussian functions. This analysis shows that the RCP and the volume fraction of the FM (SPM) phase increases (decreases) with an increase in H.

The depth-dependent magnetization in thin film oxygen stoichiometric and oxygen-deficient La0.7Sr0.3MnO3 is investigated by using polarized neutron reflectivity and DC bulk magnetometry. The polarized neutron reflectivity results reveal that the stoichiometric sample shows enhanced interfacial magnetization relative to the rest of the film. The oxygen-deficient sample exhibits a reduced average magnetization from the optimized recipe. Both films show regions of suppressed magnetization at the surface regardless of the growth pressure. The oxygen stoichiometric film does not show an interfacial dead layer, whereas the oxygen-deficient film exhibits a dead layer whose thickness changes with temperature. At a low applied field, we observe striking differences in the depth dependence of the magnetic ordering, with the oxygen-deficient film exhibiting exchange spring behavior, while the stoichiometric film shows a constant magnetization direction across the film. These results suggest that the incorporation of oxygen vacancies during growth leads to an accumulation of vacancies at the interface, which is enhanced at higher temperature due to increased oxygen mobility, creating a region of reduced magnetism that couples to the rest of the film. These results offer insight into the complex behavior and role of oxygen vacancies in the magnetism of these systems. Additionally, the study reveals further details of the negative magnetization in La0.7Sr0.3MnO3 reported in previous studies, which are discussed here.

Applications of wavelet analysis in ultra-thin film transient reflectivity (TR) measurements have been investigated. Advantages of utilizing different localized wavelet bases, in position and time, have been addressed on the residual TR signals. Morse wavelets have been used to obtain information from the abrupt oscillatory modes in the signal, which are not distinguishable with conventional methods such as Fourier transforms. These abrupt oscillatory modes are caused by the surface, interface, or any short-lived oscillatory modes which are suppressed in the TR signal in ultra-thin films. It is demonstrated that by choosing different Morse wavelets, information regarding different oscillatory modes in the TR signal of a heterostructure thin film is achievable. Moreover, by performing wavelet analysis on multiferroic heterostructures, oscillatory modes with very close energy ranges are easily distinguishable. For illustration, residuals of the TR signals have been obtained by a pump-probe setup in reflectivity mode on La0.7Sr0.3MnO3/SrTiO3 and BaTiO3/La0.7Sr0.3MnO3/SrTiO3 samples, where sufficient signal to noise ratios have been achieved by taking multiple scans. The residual signals have been analyzed with Morse wavelets, and multiple oscillatory modes with close energy ranges have been observed and distinguished. This approach can isolate the location of various oscillatory modes at the surface, interface and in the bulk of the heterostructure sample.

Low-energy collective electronic excitations exhibiting sound-like linear dispersion have been intensively studied both experimentally and theoretically for a long time. However, coherent acoustic plasmon modes appearing in time-domain measurements are rarely observed due to Landau damping by the single-particle continua. Here we report on the observation of coherent acoustic Dirac plasmon (CADP) modes excited in indirectly (electrostatically) opposite-surface coupled films of the topological insulator Bi2Se3. Using transient second-harmonic generation, a technique capable of independently monitoring the in-plane and out-of-plane electron dynamics in the films, the GHz-range oscillations were observed without corresponding oscillations in the transient reflectivity. These oscillations were assigned to the transverse magnetic and transverse electric guided CADP modes induced by the evanescent guided Lamb acoustic waves and remained Landau undamped due to fermion tunnelling between the opposite-surface Dirac states., Coherent acoustic plasmons in time-domain measurements are rarely observed due to Landau damping. Here, Glinka et al. use transient second-harmonic generation to observe coherent acoustic Dirac plasmon modes survived in indirectly opposite-surface coupled Bi2Se3 films due to Dirac fermion tunnelling.

© 2016 IOP Publishing Ltd. Transient reflectivity (TR) measured at laser photon energy 1.51 eV from the indirectly intersurface-coupled topological insulator Bi2-xMnxSe3films (12 nm thick) revealed a strong dependence of the rise-time and initial decay-time constants on photoexcited carrier density and Mn content. In undoped samples (x = 0), these time constants are exclusively governed by electron-electron and electron-phonon scattering, respectively, whereas in films with x = 0.013-0.27 ultrafast carrier dynamics are completely controlled by photoexcited electron trapping by ionized Mn2+acceptors and their dimers. The shortest decay-time (∼0.75 ps) measured for the film with x = 0.27 suggests a great potential of Mn-doped Bi2Se3films for applications in high-speed optoelectronic devices. Using Raman spectroscopy exploiting similar laser photon energy (1.58 eV), we demonstrate that due to indirect intersurface coupling in the films, the photoexcited electron trapping in the bulk enhances the electron-phonon interaction strength in Dirac surface states.

Experimental investigations of the magnetic dead layer in 7.6 nm thick film of La0.7Sr0.3MnO3 (LSMO) are reported. The dc magnetization (M) measurements for a sample cooled to T = 5 K in applied field H = 0 reveal the presence of negative remanent magnetization (NRM) in the M vs. H (magnetic field) measurements as well as in the M vs. T measurements in H = 50 Oe and 100 Oe. The M vs. T data in ZFC (zero-field-cooled) and FC (field-cooled) protocols are used to determine the blocking temperature TB in different H. Isothermal hysteresis loops at different T are used to determine the temperature dependence of saturation magnetization (MS), remanence (MR) and coercivity HC. The MS vs. T data are fit to the Bloch law, MS (T) = M0 (1 – BT 3/2), showing a good fit for T < 100 K and yielding the nearest-neighbor exchange constant J/kB ≅ 18 K. The variations of TB vs. H and HC vs. T are well described by the model often used for randomly oriented magnetic nanoparticles with magnetic domain diameter ≈ 9 nm present in the dead-layer of thickness d =1.4 nm. Finally, the data available from literature on the thickness (D) variation of Curie temperature (TC) and MS of LSMO films grown under 200, 150, and 0.38 mTorr pressures of O2 are analyzed in terms of the finite-size scaling, with MS vs. D data fit to MS (D) = MS(b)(1-d/D) yielding the dead layer thickness d = 1.1 nm, 1.4 nm and 2.4 nm respectively. Brief discussion on the significance of these results is presented.

We demonstrate a direct correlation between the domain structure of multiferroic BiFeO3 thin films and exchange bias of Co0.9Fe0.1/BiFeO3 heterostructures. Two distinct types of interactions, an enhancement of the coercive field (exchange enhancement) and an enhancement of the coercive field combined with large shifts of the hysteresis loop (exchange bias), have been observed in these heterostructures, which depend directly on the type and crystallography of the nanoscale (2 nm) domain walls in the BiFeO3 film. We show that the magnitude of the exchange bias interaction scales with the length of 109 degree ferroelectric domain walls in the BiFeO3 thin films which have been probed via piezoresponse force microscopy and x-ray magnetic circular dichroism., Comment: Accepted to Nano Letters May 2008

Multiferroics, materials combining multiple order parameters, offer an exciting way of coupling phenomena such as electronic and magnetic order. Using epitaxial growth and heteroepitaxy, researchers have grown high-quality thin films and heterostructures of the multiferroic BiFeO 3 . The ferroelectric and antiferromagnetic domain structure and coupling between these two order parameters in BiFeO 3 is now being studied. We describe the evolution of our understanding of the connection between structure, properties, and new functionalities (including electrical control of magnetism) using BiFeO 3 as a model system.

Optical second-harmonic generation (SHG) has been measured in a reflection from the nanometer-thick films (6 to 40 nm) of the topological insulator $\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ using 1.51 eV (820 nm) Ti:Sapphire laser photons and revealed a strong dependence of the integral SHG intensity on the film thickness. The integral SHG intensity was determined by area integration of the SHG rotational anisotropy patterns measured for different input-output light polarization geometries. A \ensuremath{\sim}100-fold enhancement of the integral SHG intensity with decreasing film thickness has been suggested to result from the dc-electric-field-induced SHG (EFISHG) effects. Two sources of dynamically created dc electric field were proposed: (i) the capacitor-type dc electric field that gradually increases with decreasing film thickness from 40 to 6 nm due to a dynamical imbalance of photoexcited long-lived carriers between the opposite-surface Dirac surface states and (ii) a dc electric field associated with a nonlinearly excited Dirac plasmon, which is responsible for the resonant enhancement of the integral SHG intensity for the 10 nm thick film with a Lorentz-shaped resonance of \ensuremath{\sim}1.6 nm full width at half maximum. In addition to the general SHG enhancement trends with decreasing film thickness, a relative decrease of the out-of-plane contribution with respect to the in-plane contribution was observed. Using a theoretical treatment of the measured SHG rotational anisotropy patterns, this effect has been suggested to result from the joint contributions of the linear and quadratic dc electric field effects to the EFISHG response.

Three-dimensional antiferromagnets with random magnetic anisotropy (RMA) that have been experimentally studied to date have competing two-dimensional and three-dimensional exchange interactions which can obscure the authentic effects of RMA. The magnetic phase diagram of Fe_{x}Ni_{1-x}F_{2} epitaxial thin films with true random single-ion anisotropy was deduced from magnetometry and neutron scattering measurements and analyzed using mean-field theory. Regions with uniaxial, oblique, and easy-plane anisotropies were identified. A RMA-induced glass region was discovered where a Griffiths-like breakdown of long-range spin order occurs.

Exchange bias coupling at the multiferroic- ferromagnetic interface in BiFeO₃ /La₀.₇ Sr₀.₃ MnO₃ heterostructures exhibits a critical thickness for ultrathin BiFeO₃ layers of 5 unit cells (2 nm). Linear dichroism measurements demonstrate the dependence on the BiFeO₃ layer thickness with a strong reduction for ultrathin layers, indicating diminished antiferromagnetic ordering that prevents interfacial exchange bias coupling.

X-ray absorption spectroscopy and photoemission electron microscopy are techniques commonly used to determine the magnetic properties of thin films, crystals, and heterostructures. Recently, these methods have been used in the study of magnetoelectrics and multiferroics. The analysis of such materials has been compromised by the presence of multiple order parameters and the lack of information on how to separate these coupled properties. In this work, we shed light on the manifestation of dichroism from ferroelectric polarization and atomic structure using photoemission electron microscopy and x-ray absorption spectroscopy. Linear dichroism arising from the ferroelectric order in the PbZr0.2Ti0.8O3thin films was studied as a function of incident x-ray polarization and geometry to unambiguously determine the angular dependence of the ferroelectric contribution to the dichroism. These measurements allow us to examine the contribution of surface charges and ferroelectric polarization as potential mechanisms for linear dichroism. The x-ray linear dichroism from ferroelectric order revealed an angular dependence based on the angle between the ferroelectric polarization direction and the x-ray polarization axis, allowing a formula for linear dichroism in ferroelectric samples to be defined. © 2012 IOP Publishing Ltd.

This study delineates the evolution of magnetic order in epitaxial films of the room-temperature multiferroic BiFeO3 system. Using angle- and temperature-dependent dichroic measurements and spectromicroscopy, we have observed that the antiferromagnetic order in the model multiferroic BiFeO3 evolves systematically as a function of thickness and strain. Lattice-mismatch-induced strain is found to break the easy-plane magnetic symmetry of the bulk and leads to an easy axis of magnetization which can be controlled through strain. Understanding the evolution of magnetic structure and how to manipulate the magnetism in this model multiferroic has significant implications for utilization of such magnetoelectric materials in future applications

Transient reflectivity traces measured for nanometer-sized films of the topological insulator Bi2Se3 revealed GHz-range oscillations driven within the relaxation of hot carriers photoexcited with ultrashort laser pulses of 1.51 eV photon energy. These oscillations have been suggested to result from acoustic phonon dynamics, including coherent longitudinal acoustic phonons in the form of standing acoustic waves. An increase of oscillation frequency from ~35 to ~70 GHz with decreasing film thickness from 40 to 15 nm was attributed to the interplay between two different regimes employing traveling-acoustic-waves for films thicker than 40 nm and the film bulk acoustic wave resonator (FBAWR) modes for films thinner than 40 nm. The amplitude of oscillations decays rapidly for films below 15 nm thick when the indirect intersurface coupling in Bi2Se3 films switches the FBAWR regime to that of the Lamb wave excitation. The frequency range of coherent longitudinal acoustic phonons is in good agreement with elastic properties of Bi2Se3.

Transient reflectivity (TR) from thin films (6 - 40 nm thick) of the topological insulator Bi2Se3 reveal ultrafast carrier dynamics, which suggest the existence of both radiative and non-radiative recombination between electrons residing in the upper cone of initially unoccupied high energy Dirac surface states (SS) and holes residing in the lower cone of occupied low energy Dirac SS. The modeling of measured TR traces allowed us to conclude that recombination is induced by the depletion of bulk electrons in films below ~20 nm thick due to the charge captured on the surface defects. We predict that such recombination processes can be observed using time-resolved photoluminescence techniques.