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1. Croissance de semi-conducteurs à grand gap

Author

Dedulle, Jean-Marc, CHAUSSENDE, D., Madar, R., Pons, M., BLANQUET, E., BAILLET, F., Chichignoud, G., Ucar-Morais, M., Claudel, A., Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), NOVASIC, NOVASiC, Association Française de Mécanique, and Service irevues, irevues

Subjects
PVT / CVD, Modélisation, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, Croissance SiC / AlN, [PHYS.MECA]Physics [physics]/Mechanics [physics], [CHIM.MATE]Chemical Sciences/Material chemistry, [PHYS.MECA] Physics [physics]/Mechanics [physics]
Abstract

Colloque avec actes et comité de lecture. Internationale.; International audience; La modélisation et la simulation des procédés de croissance tel que le transport physique en phase vapeur (PVT), le dépôt chimique en phase vapeur (CVD ou HTCVD) et les techniques hybrides (CFPVT), sont suffisamment au point pour être utilisées comme des outils de compréhension des phénomènes physiques couplés et comme des outils de conception de nouveaux procédés et d'optimisation de procédés existants. La modélisation des procédés d'élaboration rassemble plusieurs voies physico-chimiques de complexité variable, depuis des études thermodynamiques et/ou cinétiques jusqu'aux transferts simultanés de matière et de chaleur couplées avec les bases de données et propriétés thermodynamiques et/ou cinétiques et de transport. Différentes voies de modélisation sont utilisées, thermodynamiques, cinétique ou transfert de masse, de façon couplée ou découplée, permettant de visualiser l'évolution de la croissance et ainsi comprendre le rôle complexe et fortement couplé des phénomènes.

Published
2007

2. Advantages and challenges of Plasma Immersion Ion Implantation for Power devices manufacturing on Si, SiC and GaN using PULSION ® tool

Author

Laurent Roux, Philippe Godignon, Moriz Jelinek, Marcin Zielinski, Yohann Spiegel, Frank Torregrosa, Gael Borvon, Werner Schustereder, Thomas Wuebben, Guillaume Sempere, Frederic Morancho, Ion Beam Services (IBS), Infineon Technologies AG [München], Centro Nacional de Microelectronica [Spain] (CNM), NOVASiC, Équipe Intégration de Systèmes de Gestion de l'Énergie (LAAS-ISGE), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Ion Beam Services, industriel, Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
Materials science, Silicon, Plasma Immersion Ion Implantation, chemistry.chemical_element, Gallium nitride, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, chemistry.chemical_compound, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Silicon carbide, Hardware_INTEGRATEDCIRCUITS, 010302 applied physics, business.industry, 020208 electrical & electronic engineering, Doping, Wide-bandgap semiconductor, Ion Implantation, Plasma Doping, Plasma-immersion ion implantation, Power devices, [SPI.TRON]Engineering Sciences [physics]/Electronics, Ion implantation, chemistry, Optoelectronics, business
Abstract

International audience; Thanks to its high throughput and low cost of ownership Plasma Immersion Ion Implantation (or Plasma Doping) has been widely used for Memory device fabrication. Its ability to implant very high doses in shallow layers, makes it a perfect tool for new material modification applications needed for advanced logic devices. Nevertheless, few works are reported for its uses in power device fabrication. The aim of this paper is to present several application cases where we studied the use of our PULSION® PIII tool for implantation in Silicon, Silicon Carbide and Gallium Nitride power devices. Benefits of PIII and challenges to overcome will be discussed for the following applications in silicon devices: High dose phosphorus and boron implantation for polysilicon gate doping and low dose doping of deep trench superjunction applications, contact plug doping for Silicon SFET devices and wall doping of deep shallow trenches for IGBTs. In addition possible applications for wide band gap materials will be discussed with an example of doping application for GaN HEMT, where PIII allowed to make the first demonstration of a normally-off device. Finally some doping and material modification applications on SiC are presented.

Published
2018
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3. Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC( 001)

Author

Marc Portail, Thierry Chassagne, Philippe Vennéguès, Rami Khazaka, Jean-François Michaud, Marcin Zielinski, Daniel Alquier, Marius Grundmann, Université François Rabelais, GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut für Experimentelle Physik II, Universität Leipzig [Leipzig], NOVASiC, Savoie Technolac, and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Physics and Astronomy (miscellaneous), 02 engineering and technology, Substrate (electronics), Surface finish, Chemical vapor deposition, Epitaxy, 01 natural sciences, Atomic force microscopy, 0103 physical sciences, Surface roughness, Thin film growth, ddc:530, Single domain, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Condensed matter physics, Heterojunction, 021001 nanoscience & nanotechnology, Crystallography, Mirrors, Calabi Yau theory, Calabi Yau theory, Atomic force microscopy, Mirrors, Heterojunctions, Group theory, Carbides, 0210 nano-technology, Surface morphology, Layer (electronics)
Abstract

International audience; Structural and morphological characterization of a Si(110) film heteroepitaxied on 3C-SiC(001)/Si(001) on-axis template by chemical vapor deposition has been performed. An antiphase domain (APD) free 3C-SiC layer was used showing a roughness limited to 1 nm. This leads to a smooth Si film with a roughness of only 3 nm for a film thickness of 400 nm. The number of rotation domains in the Si(110) epilayer was found to be two on this APD-free 3C-SiC surface. This is attributed to the in-plane azimuthal misalignment of the mirror planes between the two involved materials. We prove that fundamentally no further reduction of the number of domains can be expected for the given substrate. We suggest the necessity to use off-axis substrates to eventually favor a single domain growth.

Published
2016
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4. Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

Author

W. Poirier, Marc Portail, Marcin Zielinski, Thierry Chassagne, Dimitrios Kazazis, F. Lafont, Félicien Schopfer, C. Consejo, O. Couturaud, Adrien Michon, Rebeca Ribeiro-Palau, Benoit Jouault, Laboratoire National de Métrologie et d'Essais [Trappes] (LNE ), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, Paul Scherrer Institute (PSI), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and NOVASiC, Savoie Technolac

Subjects
Length scale, Materials science, Fabrication, General Physics and Astronomy, FOS: Physical sciences, Nanotechnology, 02 engineering and technology, Chemical vapor deposition, Quantum Hall effect, 7. Clean energy, 01 natural sciences, Article, General Biochemistry, Genetics and Molecular Biology, law.invention, chemistry.chemical_compound, law, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Silicon carbide, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Multidisciplinary, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Graphene, General Chemistry, 021001 nanoscience & nanotechnology, Magnetic field, chemistry, Optoelectronics, Sublimation (phase transition), 0210 nano-technology, business
Abstract

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device made of graphene grown by chemical vapour deposition on SiC which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron density devices., Comment: 12 pages, 8 figures

Published
2015
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5. Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

Author

L. Bernardi, Franck Bocquet, R. Boubekri, David Martrou, Sai Jiao, Daniel Alquier, Laurent Nony, L. Couraud, Christian Loppacher, Sebastien Gauthier, Jean-François Michaud, J. Bouloc, Thierry Chassagne, Edmond Cambril, Marcin Zielinski, Marc Portail, Ali Madouri, Catherine Moisson, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), NOVASiC, Savoie Technolac, GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Université de Tours (UT)-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Groupe NanoSciences (CEMES-GNS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), ANR-08-NANO-0017,NANOSENS,Cantilevers en carbure de silicium à piézorésistivité métallique pour microscopie à force atomique en mode dynamique à très haute fréquence(2008), Université Nice Sophia Antipolis (... - 2019) (UNS), Université de Tours-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Cantilever, Materials science, business.industry, Oscillation, Wide-bandgap semiconductor, General Physics and Astronomy, Nanotechnology, 02 engineering and technology, Chemical vapor deposition, 021001 nanoscience & nanotechnology, 01 natural sciences, Piezoresistive effect, Surface coating, 0103 physical sciences, Microscopy, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Non-contact atomic force microscopy
Abstract

International audience; Cantilevers with resonance frequency ranging from 1 MHz to 100 MHz have been developed for dynamic atomic force microscopy. These sensors are fabricated from 3C-SiC epilayers grown on Si(100) substrates by low pressure chemical vapor deposition. They use an on-chip method both for driving and sensing the displacement of the cantilever. A first gold metallic loop deposited on top of the cantilever is used to drive its oscillation by electrothermal actuation. The sensing of this oscillation is performed by monitoring the resistance of a second Au loop. This metallic piezoresistive detection method has distinct advantages relative to more common semiconductor-based schemes. The optimization, design, fabrication, and characteristics of these cantilevers are discussed.

Published
2014
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6. Epitaxial graphene on cubic SiC'111.../Si'111... substrate

Author

Marc Portail, Abhay Shukla, Marcin Zielinski, Jacques Gierak, Jose Penuelas, A. Kahouli, P. Jegou, Abdelkarim Ouerghi, Laurent Travers, D. Lucot, Thierry Chassagne, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Service de Chimie Moléculaire (SCM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Institut de minéralogie et de physique des milieux condensés (IMPMC), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Institut de Physique du Globe de Paris (IPG Paris)-Centre National de la Recherche Scientifique (CNRS), NOVASiC, Savoie Technolac, Université Nice Sophia Antipolis (... - 2019) (UNS), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université Pierre et Marie Curie - Paris 6 (UPMC)-IPG PARIS-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Silicon, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Substrate (electronics), Epitaxy, 01 natural sciences, law.invention, chemistry.chemical_compound, symbols.namesake, X-ray photoelectron spectroscopy, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], law, 0103 physical sciences, Silicon carbide, 010302 applied physics, Graphene, 021001 nanoscience & nanotechnology, Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter, chemistry, symbols, 0210 nano-technology, Raman spectroscopy, Graphene nanoribbons
Abstract

International audience; Epitaxial graphene films grown on silicon carbide SiC substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC 111 /Si 111 substrate. X-ray photoelectron spectroscopy and scanning tunneling microscopy were extensively used to characterize the quality of the few-layer graphene FLG surface. The Raman spectroscopy studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples

Published
2010
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7. ZnO homoepitaxy on the O polar face of hydrothermal and melt-growth substrates by pulsed laser deposition

Author

Gilles Lerondel, Daniel Turover, A.J. Neves, F. Hosseini Teherani, Teresa Monteiro, R. Kling, Andreas Waag, François Jomard, D. J. Rogers, Alain Largeteau, G. Garry, M. C. Carmo, Marco Peres, J. Nause, Pierre Galtier, Christophe Hubert, Th. Gruber, M.J. Soares, C. Moisson, Alain Lusson, Gérard Demazeau, Nanovation SARL, Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université de Bordeaux (UB), NOVASiC, Cermet Inc., Thales Research, Department of Semiconductor Physics, Universität Ulm - Ulm University [Ulm, Allemagne], Institute of Semiconductor Technology, Technische Universität Braunschweig = Technical University of Braunschweig [Braunschweig], Laboratoire de physique des solides et de cristallogénèse (LPSC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Physics Department, Universidade de Aveiro, and Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Photoluminescence, Materials science, Homoepitaxy ZnO, Analytical chemistry, 02 engineering and technology, Substrate (electronics), 01 natural sciences, Hydrothermal circulation, Pulsed laser deposition, structural and optical properties, Pulse laser deposition, Crystal, Chemical-mechanical planarization, 0103 physical sciences, Hydrothermal synthesis, Melt growth, General Materials Science, Films, 010302 applied physics, PACS: 81.10.h, 68.55.-a, 81.15.Fg, 78.20.-e, 61.82.Fk, 61.10.Nz, 68.37.Ps, Hydrothermal crystal growth, General Chemistry, ZnO films grown by PLD, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Full width at half maximum, Hydrothermal and melt-grown ZnO crystals, ZnO, 0210 nano-technology
Abstract

2 cm diameter hydrothermal ZnO crystals were grown and then made into substrates using both mechanical and chemical-mechanical polishing (CMP). CMP polishing showed superior results with an (0002) Ω scan full width half maximum (FWHM) of 67 arcsec and an root mean square (RMS) roughness of 2 A. In comparison, commercial melt-grown substrates exhibited broader X-ray diffraction (XRD) linewidths with evidence of sub-surface crystal damage due to polishing, including a downward shift of c-lattice parameter. Secondary ion mass spectroscopy revealed strong Li, Fe, Co, Al and Si contamination in the hydrothermal crystals as opposed to the melt-grown substrates, for which glow discharge mass spectroscopy studies had reported high levels of Pb, Fe, Cd and Si. Low temperature photoluminescence (PL) studies indicated that the hydrothermal crystal had high defect and/or impurity concentrations compared with the melt-grown substrate. The dominant bound exciton for the melt-grown substrate was indexed to Al. ZnO films were grown using pulsed laser deposition. The melt-grown substrates gave superior results with XRD (0002) Ω and 2θ/Ω WHM of 124 and 34 arcsec, respectively. Atomic force microscope measurements indicated a low RMS roughness (1.9 nm) as confirmed by fringes in the XRD 2θ/Ω scan. It was suggested that the improvement in XRD response relative to the substrate might be due to “healing” of sub-surface polishing damage due to the elevated Ts used for the growth. Indeed the c-lattice parameter for the homoepitaxial layer on the melt-grown substrate had become that which would be expected for strain-free ZnO. Furthermore, the stability of the PL peak positions relative to bulk ZnO, confirmed that the films appear practically strain free.

Published
2007
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8. Single atomic steps on SiC polished surfaces

Author

Didier Chaussende, Patrice Vicente, NOVASiC, and Chaussende, Didier

Subjects
010302 applied physics, [CHIM.MATE] Chemical Sciences/Material chemistry, Materials science, business.industry, Nanotechnology, 02 engineering and technology, Substrate (electronics), [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, 7. Clean energy, Lattice mismatch, Thermal conductivity, 0103 physical sciences, Sapphire, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

On-axis 4H-SiC and 6H-SiC are very promising material for respectively electronics and optoelectronics applications. Compared to GaN and sapphire, the reduced lattice mismatch between GaN and SiC combined with a high thermal conductivity makes 6H-SiC a good substrate for the growth of Group III-nitride epitaxial layers [1].

Published
2002

9. Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy.

Author

Scuderi V, Zielinski M, and La Via F

Abstract

In this paper, we used micro-Raman spectroscopy in cross-section to investigate the effect of different doping on the distribution of stress in the silicon substrate and the grown 3C-SiC film. The 3C-SiC films with a thickness up to 10 μm were grown on Si (100) substrates in a horizontal hot-wall chemical vapor deposition (CVD) reactor. To quantify the influence of doping on the stress distribution, samples were non-intentionally doped (NID, dopant incorporation below 10 16 cm -3 ), strongly n-type doped ([N] > 10 19 cm -3 ), or strongly p-type doped ([Al] > 10 19 cm -3 ). Sample NID was also grown on Si (111). In silicon (100), we observed that the stress at the interface is always compressive. In 3C-SiC, instead, we observed that the stress at the interface is always tensile and remains so in the first 4 µm. In the remaining 6 µm, the type of stress varies according to the doping. In particular, for 10 μm thick samples, the presence of an n-doped layer at the interface maximizes the stress in the silicon (~700 MPa) and in the 3C-SiC film (~250 MPa). In the presence of films grown on Si(111), 3C-SiC shows a compressive stress at the interface and then immediately becomes tensile following an oscillating trend with an average value of 412 MPa.

Published
2023
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10. New Approaches and Understandings in the Growth of Cubic Silicon Carbide.

Author

La Via F, Zimbone M, Bongiorno C, La Magna A, Fisicaro G, Deretzis I, Scuderi V, Calabretta C, Giannazzo F, Zielinski M, Anzalone R, Mauceri M, Crippa D, Scalise E, Marzegalli A, Sarikov A, Miglio L, Jokubavicius V, Syväjärvi M, Yakimova R, Schuh P, Schöler M, Kollmuss M, and Wellmann P

Abstract

In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two different approaches have been used in the last years. From one side, several compliance substrates have been used to try to reduce both the defects and stress, while from another side, the first bulk growth has been performed to try to improve the quality of this material with respect to the heteroepitaxial one. From all these studies, a new understanding of the material defects has been obtained, as well as regarding all the interactions between defects and several growth parameters. This new knowledge will be the basis to solve the main issue of the 3C-SiC growth and reach the goal to obtain a material with low defects and low stress that would allow for realizing devices with extremely interesting characteristics.

Published
2021
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11. Measurement of Residual Stress and Young's Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon.

Author

Sapienza S, Ferri M, Belsito L, Marini D, Zielinski M, La Via F, and Roncaglia A

Abstract

3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (high Young's modulus and low density) that allow the device to be operated for a given geometry at higher frequency. The mechanical properties of this material depend strongly on the material quality, the defect density, and the stress. For this reason, the use of SiC in Si-based microelectromechanical system (MEMS) fabrication techniques has been very limited. In this work, the complete characterization of Young's modulus and residual stress of monocrystalline 3C-SiC layers with different doping types grown on <100> and <111> oriented silicon substrates is reported, using a combination of resonance frequency of double clamped beams and strain gauge. In this way, both the residual stress and the residual strain can be measured independently, and Young's modulus can be obtained by Hooke's law. From these measurements, it has been observed that Young's modulus depends on the thickness of the layer, the orientation, the doping, and the stress. Very good values of Young's modulus were obtained in this work, even for very thin layers (thinner than 1 μm), and this can give the opportunity to realize very sensitive strain sensors.

Published
2021
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12. Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks.

Author

Schuh P, Steiner J, La Via F, Mauceri M, Zielinski M, and Wellmann PJ

Abstract

The growth of 3C-SiC shows technological challenges, such as high supersaturation, a silicon-rich gas phase and a high vertical temperature gradient. We have developed a transfer method creating high-quality 3C-SiC-on-SiC (100) seeding stacks, suitable for use in sublimation "sandwich" epitaxy (SE). This work presents simulation data on the change of supersaturation and the temperature gradient between source and seed for the bulk growth. A series of growth runs on increased source to seed distances was characterized by XRD and Raman spectroscopy. Results show a decrease in quality in terms of single-crystallinity with a decrease in supersaturation. Morphology analysis of as-grown material indicates an increasing protrusion dimension with increasing thickness. This effect limits the achievable maximal thickness. Additional polytype inclusions were observed, which began to occur with low supersaturation (S ≤ 0.06) and prolonged growth (increase of carbon gas-species).

Published
2019
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13. Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth.

Author

Schuh P, la Via F, Mauceri M, Zielinski M, and Wellmann PJ

Abstract

We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of this process. The nucleation and growth of cubic silicon carbide is supported by XRD and Raman measurements. The rocking curve data yield a full-width-at-half-maximum (FWHM) between 138 to 140 arc sec for such grown material. Analysis of the inbuilt stress of the bulk-like material shows no indications of any residual stress., Competing Interests: The authors declare no conflict of interest.

Published
2019
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14. Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide.

Author

Lafont F, Ribeiro-Palau R, Kazazis D, Michon A, Couturaud O, Consejo C, Chassagne T, Zielinski M, Portail M, Jouault B, Schopfer F, and Poirier W

Abstract

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10(-9) in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices.

Published
2015
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