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Physical Review B, 107 (22), ISSN:1098-0121, ISSN:0163-1829, ISSN:1550-235X, ISSN:0556-2805, ISSN:2469-9969, ISSN:1095-3795, ISSN:2469-9950

International audience

International audience; Near-infrared (near-IR) integrated photonic devices in silicon based platforms have been studied over the last decades for applications such as on-chip optical communications and sensing. Hybrid integration of functional oxides to search the limits of low power consumption has been a challenge overcome by material engenieering. In this regard, Yttria-Stabilized Zirconia (YSZ) stands as an interesting material for its structural, chemical and optical properties which includes transparency range from the visible to the mid-IR wavelength range. In this regard, we recently demonstrated YSZ waveguides with propagation losses as low as 2 dB/cm at a wavelength of 1380 nm [2]. Based on the encouraging preliminary results, we have recently explored the possibility to introduce active rare-earth dopants into YSZ waveguides to demonstrate on-chip optical amplifiers based on YSZ. In this study, we introduced multilayer approach depositing by pulsed laser deposition (PLD) technique by Er 3+ ions, providing outstanding luminescence around λ = 1.54 µm, in correspondence with C-band of telecommunications. Such active layers have been grown onto different platforms, including SiN and sapphire. The optical properties of Er-doped YSZ thin films growth on waveguides under resonant pumping will be discussed in this paper. These results pave the way towards the implementation of new rare-earth-doped functional oxides into hybrid photonic platforms in a customized and versatile manner, adding light amplification functionalities.

International audience

Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Any: 2014, Tutores: Francesca Peiró Martínez i Sonia Estradé Albiol, Er-doped silicon nanocrystal-based oxides/nitrides have been investigated. These layers are grown between a polycrystalline silicon electrode and a monocrystalline silicon substrate to allow electrical injection. Energy Filtered (EF-) and High Resolution (HR-) TEM characterization has been performed to provide microscopic insight onto the macroscopic optoelectronic properties of the samples. Evident Er-clustering has been observed in silicon dioxides but not in silicon nitrides, suggesting a better Er solubility and local environment when nitrogen is incorporated. Silicon nanocrystals have been observed in silicon-rich nitride layers, as expected, but also in a region close to the silicon dioxide-polysilicon interface in a layer with no nitrogen or Si excesses. This unexpected Si clusterization has been attributed to Si diffusion from the polycrystalline silicon electrode into the silicon dioxide as a consequence of the annealing treatment. The structural characterization carried out by HRTEM and EFTEM has been correlated with the optoelectronic properties of the devices.